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Equivalent & Substitute Parts for DRA5113Z0L
Part Overview
The DRA5113Z0L is a pre-biased PNP bipolar junction transistor (BJT) manufactured by Panasonic Electronic Components, designed for surface mount applications in the SMini3-F2-B package. This component integrates internal biasing resistors to simplify circuit design and reduce component count in switching and amplification applications. The part is rated for 50 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and 150 mW power dissipation.
The DRA5113Z0L has been discontinued at DiGi Electronics, necessitating identification of functionally equivalent substitute components that maintain electrical and mechanical compatibility with existing designs.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP - Pre-Biased | — |
| Current - Collector (Ic) (Max) | 100 | mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 | V |
| Resistor - Base (R1) | 1 | kOhms |
| Resistor - Emitter Base (R2) | 10 | kOhms |
| DC Current Gain (hFE) (Min) | 30 | @ 5mA, 10V |
| Vce Saturation (Max) | 250 | mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500 | nA |
| Power - Max | 150 | mW |
| Mounting Type | Surface Mount | — |
| Package / Case | SC-85 | — |
| RoHS Status | RoHS Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitute parts for the DRA5113Z0L are qualified based on the following electrical and mechanical parameters:
Critical Matching Parameters:
- Transistor type: PNP - Pre-Biased configuration
- Maximum collector current: 100 mA
- Maximum collector-emitter breakdown voltage: 50 V
- Internal base resistor (R1): 1 kOhms
- Internal emitter-base resistor (R2): 10 kOhms
- Vce saturation characteristics: 250 mV or lower @ specified conditions
- Collector cutoff current: 500 nA or lower
- Surface mount technology with compatible pinout
Substitution Logic: Parts meeting all critical electrical parameters are classified as direct substitutes. Variations in power dissipation rating (150 mW vs. 200 mW), DC current gain specifications, and package form factor (SC-85 vs. SC-70/SOT-323) do not preclude substitution when the core electrical performance envelope is maintained. Package differences require physical verification of PCB layout compatibility.
Parameter Comparison
| Parameter | DRA5113Z0L (Panasonic) | DTA113ZU3HZGT106 (Rohm) | DTA113ZU3T106 (Rohm) | PDTA113ZU,115 (NXP) |
|---|---|---|---|---|
| Transistor Type | PNP - Pre-Biased | PNP - Pre-Biased | PNP - Pre-Biased | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA | 100 mA | 100 mA | Not specified |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | 50 V | 50 V | Not specified |
| Resistor - Base (R1) | 1 kOhms | 1 kOhms | 1 kOhms | Not specified |
| Resistor - Emitter Base (R2) | 10 kOhms | 10 kOhms | 10 kOhms | Not specified |
| DC Current Gain (hFE) (Min) | 30 @ 5mA, 10V | 33 @ 5mA, 5V | 33 @ 5mA, 5V | Not specified |
| Vce Saturation (Max) | 250 mV @ 500µA, 10mA | 300 mV @ 500µA, 10mA | 300 mV @ 500µA, 10mA | Not specified |
| Current - Collector Cutoff (Max) | 500 nA | 500 nA | Not specified | Not specified |
| Power - Max | 150 mW | 200 mW | 200 mW | Not specified |
| Frequency - Transition | Not specified | 250 MHz | 250 MHz | Not specified |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Not specified |
| Package / Case | SC-85 | SC-70, SOT-323 | SC-70, SOT-323 | Not specified |
| RoHS Status | RoHS Compliant | ROHS3 Compliant | ROHS3 Compliant | Not specified |
| Product Status | Discontinued | Active | Active | Active |
Engineering Selection Recommendations
DTA113ZU3HZGT106 (Rohm Semiconductor): This substitute maintains all critical electrical parameters matching the DRA5113Z0L. The part is currently active in production with higher inventory availability (10,189 pcs). It carries AEC-Q101 automotive qualification and ROHS3 compliance, exceeding the original part's RoHS status. The 200 mW power rating provides additional thermal margin compared to the 150 mW specification of the original part. Package form factor differs (SC-70/SOT-323 vs. SC-85), requiring PCB layout verification. Transition frequency specification (250 MHz) is an additional performance attribute not present in the original part.
DTA113ZU3T106 (Rohm Semiconductor): This substitute also maintains all critical electrical parameters with identical specifications to DTA113ZU3HZGT106. Inventory availability is lower (4,100 pcs) but remains adequate. ROHS3 compliance and surface mount technology are confirmed. Package form factor is identical to DTA113ZU3HZGT106 (SC-70/SOT-323). This part is suitable for applications where automotive qualification is not required.
PDTA113ZU,115 (NXP Semiconductors): This substitute is listed as active with substantial inventory (241,303 pcs). However, detailed electrical specifications are not provided in the available data. The part is confirmed as a pre-biased PNP transistor with MSL 1 rating and REACH compliance. Selection of this part requires independent verification of electrical parameters against the DRA5113Z0L specification sheet to confirm functional equivalence.
Frequently Asked Questions (FAQ)
Q: Can DTA113ZU3HZGT106 or DTA113ZU3T106 be used as direct replacements for DRA5113Z0L without circuit modification?
A: Both Rohm parts maintain the critical electrical parameters (100 mA collector current, 50 V breakdown voltage, 1 kOhm base resistor, 10 kOhm emitter-base resistor, and saturation voltage characteristics). However, the package form factor differs (SC-70/SOT-323 vs. SC-85). PCB layout and footprint compatibility must be verified before implementation. If the PCB footprint is compatible, no circuit modification is required.
Q: What is the significance of the higher power rating (200 mW) in the Rohm substitutes compared to the original 150 mW specification?
A: The higher power rating indicates greater thermal capability and provides additional design margin. This does not affect functional compatibility; the part will operate within the original design envelope with improved thermal performance characteristics.
Q: Are the Rohm DTA113 parts suitable for automotive applications?
A: DTA113ZU3HZGT106 carries AEC-Q101 automotive qualification, making it suitable for automotive applications. DTA113ZU3T106 does not specify automotive qualification. Application requirements should determine which part is appropriate.
Q: What is the difference between DTA113ZU3HZGT106 and DTA113ZU3T106?
A: Both parts share identical electrical specifications and package form factors. The primary difference is that DTA113ZU3HZGT106 includes AEC-Q101 automotive qualification, while DTA113ZU3T106 does not. Inventory levels also differ (10,189 pcs vs. 4,100 pcs).
Q: Can PDTA113ZU,115 be used as a substitute without additional verification?
A: PDTA113ZU,115 is confirmed as a pre-biased PNP transistor with active product status and high inventory availability. However, complete electrical specifications are not provided in the available documentation. Independent verification of electrical parameters against the DRA5113Z0L datasheet is required before implementation to confirm functional equivalence.
Q: What packaging considerations apply when substituting SC-85 with SC-70/SOT-323?
A: SC-85 and SC-70/SOT-323 are different package form factors with different physical dimensions and pinout configurations. PCB footprint compatibility must be verified. If the existing PCB is designed for SC-85, a new PCB layout may be required for SC-70/SOT-323 packages, or an adapter solution must be evaluated.
Q: Are all substitute parts RoHS compliant?
A: DTA113ZU3HZGT106 and DTA113ZU3T106 are ROHS3 compliant, which exceeds the RoHS compliance of the original DRA5113Z0L. PDTA113ZU,115 RoHS status is not specified in the available data.
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