DP0150BDJ-7 Equivalent & Substitute Parts

Part Overview

The DP0150BDJ-7 is a Bipolar (BJT) Transistor Array featuring a dual PNP configuration in a Surface Mount SOT-963 package. This component is rated for 50V collector-emitter breakdown voltage with a maximum collector current of 100mA and 300mW power dissipation. The device operates across a temperature range of -55°C to 150°C and achieves an 80MHz transition frequency.

The DP0150BDJ-7 is classified as Obsolete. Identification of equivalent and substitute parts is necessary to support ongoing design requirements, system maintenance, and production continuity where this component is specified in existing applications.

Key Parameters

Parameter	Value	Unit
Transistor Type	2 PNP (Dual)	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Power - Max	300	mW
Frequency - Transition	80	MHz
Operating Temperature Range	-55 to 150	°C
Package / Case	SOT-963	—
Mounting Type	Surface Mount	—
DC Current Gain (hFE) (Min)	200 @ 2mA, 6V	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the DP0150BDJ-7 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

Transistor configuration: Dual PNP (2 PNP)
Package type: SOT-963 Surface Mount
Maximum collector current: 100mA
Maximum power dissipation: 300mW
Operating temperature range: -55°C to 150°C
Regulatory compliance: ROHS3 Compliant

Allowable Parameter Variations:

Collector-emitter breakdown voltage: Equal to or greater than 50V
Transition frequency: Equal to or greater than 80MHz
DC current gain (hFE): Equal to or greater than 200
Saturation voltage (Vce): May vary within device specifications
Collector cutoff current (ICBO): May vary within device specifications

The substitute part DST857BDJ-7 maintains identical transistor configuration, package type, current rating, power rating, and temperature range. The substitute exhibits a reduced breakdown voltage (45V versus 50V) and increased transition frequency (340MHz versus 80MHz), representing a trade-off in voltage rating for enhanced frequency performance.

Parameter Comparison

Parameter	DP0150BDJ-7	DST857BDJ-7	Unit
Manufacturer	Diodes Incorporated	Diodes Incorporated	—
Transistor Type	2 PNP (Dual)	2 PNP (Dual)	—
Current - Collector (Ic) (Max)	100	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	45	V
Power - Max	300	300	mW
Frequency - Transition	80	340	MHz
Operating Temperature Range	-55 to 150	-55 to 150	°C
Package / Case	SOT-963	SOT-963	—
Mounting Type	Surface Mount	Surface Mount	—
DC Current Gain (hFE) (Min)	200 @ 2mA, 6V	200 @ 2mA, 5V	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

DP0150BDJ-7 (Original Part): The DP0150BDJ-7 is classified as Obsolete. This part is ROHS3 Compliant and REACH Unaffected. Continued sourcing of this component is subject to inventory availability and may present long-term supply constraints.

DST857BDJ-7 (Substitute Part): The DST857BDJ-7 is classified as Active and maintains full ROHS3 Compliance and REACH Unaffected status. This substitute is recommended for new designs and ongoing production where the DP0150BDJ-7 is no longer available. The DST857BDJ-7 provides superior transition frequency performance (340MHz versus 80MHz) while maintaining identical current and power ratings. The reduced breakdown voltage (45V versus 50V) requires circuit-level verification to confirm compatibility with the application's maximum supply voltage.

Selection between these parts is determined by application voltage requirements and frequency performance needs. Both devices are Surface Mount SOT-963 packages with identical thermal and current handling characteristics.

Frequently Asked Questions (FAQ)

Q: Can the DST857BDJ-7 directly replace the DP0150BDJ-7 in all applications?

A: Direct replacement is possible only when the application's maximum supply voltage does not exceed 45V. The DST857BDJ-7 has a collector-emitter breakdown voltage of 45V compared to the DP0150BDJ-7's 50V rating. Applications operating at voltages between 45V and 50V require circuit redesign or voltage limiting measures.

Q: What are the key differences between these two parts?

A: Both parts share identical transistor configuration (dual PNP), current rating (100mA), power dissipation (300mW), temperature range (-55°C to 150°C), and SOT-963 package. The DST857BDJ-7 features a lower breakdown voltage (45V versus 50V) and significantly higher transition frequency (340MHz versus 80MHz). The DP0150BDJ-7 is Obsolete while the DST857BDJ-7 is Active.

Q: Are there any package or mounting differences?

A: Both parts use identical Surface Mount SOT-963 packaging. No PCB layout modifications are required for physical substitution. The DP0150BDJ-7 is supplied in standard packaging while the DST857BDJ-7 is supplied in Tape & Reel format.

Q: What compliance certifications apply to both parts?

A: Both the DP0150BDJ-7 and DST857BDJ-7 are ROHS3 Compliant and REACH Unaffected. Both parts carry ECCN classification EAR99.

Q: How does the transition frequency difference affect circuit performance?

A: The DST857BDJ-7's 340MHz transition frequency is significantly higher than the DP0150BDJ-7's 80MHz rating. This enhanced frequency response may improve switching speed and reduce propagation delay in high-frequency applications. Applications operating at frequencies below 80MHz are unaffected by this parameter difference.

Q: What is the saturation voltage difference between these parts?

A: The DP0150BDJ-7 specifies 300mV saturation voltage at 10mA base current and 100mA collector current. The DST857BDJ-7 specifies 500mV saturation voltage at 5mA base current and 100mA collector current. Applications sensitive to saturation voltage performance require evaluation of these specifications against circuit requirements.

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