DNLS160-7 Equivalent & Substitute Parts

Part Overview

The DNLS160-7 is an NPN bipolar junction transistor manufactured by Diodes Incorporated, designed for general-purpose switching and amplification applications. This device features a 60 V collector-emitter breakdown voltage, 1 A maximum collector current, and 270 MHz transition frequency in a surface mount SOT-23-3 package. The part is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility within the specified parameter ranges while offering active product status and continued availability.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	60	V
Current - Collector (Ic) (Max)	1	A
Vce Saturation (Max) @ Ib, Ic	250 mV @ 100 mA, 1 A	—
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 500 mA, 5 V	—
Power - Max	300	mW
Frequency - Transition	270	MHz
Operating Temperature	-55 to 150	°C (TJ)
Package / Case	SOT-23-3	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the DNLS160-7 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60 V minimum
Current - Collector (Ic) (Max): 1 A minimum
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 minimum @ 500 mA, 5 V
Vce Saturation (Max) @ Ib, Ic: 250 mV maximum @ 100 mA, 1 A
Package / Case: SOT-23-3 or equivalent surface mount package
Mounting Type: Surface Mount
Operating Temperature Range: -55°C to 150°C minimum
RoHS Status: ROHS3 Compliant

Secondary Considerations:

Power dissipation capability (300 mW or greater preferred)
Transition frequency (270 MHz or greater preferred for performance margin)
Product Status: Active preferred for long-term availability

Substitute parts are grouped into two categories: direct electrical equivalents maintaining all primary parameters, and functional alternatives that meet minimum electrical requirements while offering enhanced specifications or alternative packaging options.

Parameter Comparison

Part Number	Manufacturer	Product Status	Ic (Max) [A]	Vce Breakdown [V]	hFE (Min) @ 500mA, 5V	Vce Sat (Max) @ 100mA, 1A [mV]	Power (Max) [mW]	Freq - Transition [MHz]	Package	Temp Range [°C]
DNLS160-7	Diodes Incorporated	Obsolete	1	60	200	250	300	270	SOT-23-3	-55 to 150
DSS4160T-7	Diodes Incorporated	Active	1	60	200	280	725	150	SOT-23-3	-55 to 150
ZXTN2038FTA	Diodes Incorporated	Active	1	60	100	500	350	150	SOT-23-3	-55 to 150
PBSS4160T,215	Nexperia USA Inc.	Active	1	60	200	250	400	220	SOT-23-3	-55 to 150
2SC5866TLQ	Rohm Semiconductor	Active	2	60	120	500	500	200	TSMT3	-55 to 150
BC846,215	NXP USA Inc.	Active	0.1	65	110	400	250	100	SOT-23	-55 to 150
BC846A,215	Nexperia USA Inc.	Active	0.1	65	110	400	250	100	SOT-23-3	-55 to 150
BC846ALT1G	onsemi	Active	0.1	65	110	600	300	100	SOT-23-3	-55 to 150
BC846B,215	Nexperia USA Inc.	Active	0.1	65	200	400	250	100	SOT-23-3	-55 to 150
BC846B,235	Nexperia USA Inc.	Active	0.1	65	200	400	250	100	SOT-23-3	-55 to 150
BC846B-TP	Micro Commercial Co	Active	0.1	65	200	500	225	100	SOT-23	-55 to 150

Engineering Selection Recommendations

Direct Electrical Equivalents (Recommended Primary Substitutes):

The DSS4160T-7 and PBSS4160T,215 are the primary recommended substitutes for the DNLS160-7. Both devices maintain the critical electrical parameters: 1 A maximum collector current, 60 V collector-emitter breakdown voltage, 200 minimum hFE at 500 mA and 5 V, and SOT-23-3 surface mount packaging. Both are active products with ROHS3 compliance and MSL 1 rating. The DSS4160T-7 offers enhanced power dissipation (725 mW) and is manufactured by the same supplier (Diodes Incorporated). The PBSS4160T,215 provides 400 mW power capability and maintains the 250 mV Vce saturation specification of the original part.

Secondary Substitutes (Application-Dependent):

The ZXTN2038FTA is an active Diodes Incorporated product in SOT-23-3 packaging with 60 V breakdown and 1 A capability. However, this device specifies a minimum hFE of 100 at 500 mA and 5 V, which falls below the DNLS160-7 specification of 200. Additionally, the Vce saturation maximum of 500 mV exceeds the original 250 mV specification. This part is suitable only for applications where lower current gain and higher saturation voltage are acceptable.

The 2SC5866TLQ from Rohm Semiconductor offers enhanced current capability (2 A maximum) and is active with ROHS3 compliance. However, this device uses a TSMT3 package rather than SOT-23-3, requiring PCB layout modification. The minimum hFE specification of 120 at 100 mA and 2 V does not directly correspond to the DNLS160-7 test conditions.

Not Recommended as Direct Substitutes:

The BC846 series devices (BC846,215; BC846A,215; BC846ALT1G; BC846B,215; BC846B,235; BC846B-TP) are small-signal transistors with maximum collector current of 100 mA, which is insufficient for applications requiring the 1 A capability of the DNLS160-7. These parts are suitable only for low-current signal applications and should not be used as substitutes in circuits designed for 1 A operation.

Compliance and Availability:

All recommended substitute parts maintain ROHS3 compliance and MSL 1 (unlimited moisture sensitivity) ratings consistent with the original DNLS160-7. All active substitutes are available in production quantities with established supply chains.

Frequently Asked Questions (FAQ)

Q: Can the DSS4160T-7 directly replace the DNLS160-7 without circuit modification?

A: Yes. The DSS4160T-7 maintains all critical electrical parameters: 1 A maximum collector current, 60 V breakdown voltage, 200 minimum hFE at 500 mA and 5 V, and identical SOT-23-3 packaging. The device is pin-compatible and electrically equivalent for standard switching and amplification applications.

Q: Why are the BC846 series devices listed as substitutes if they cannot handle 1 A?

A: The BC846 series devices are included in the provided substitute list but do not meet the primary substitution criteria for the DNLS160-7. These are small-signal transistors with 100 mA maximum collector current and are not suitable for applications requiring 1 A operation. Selection of BC846 variants should occur only in applications where collector current requirements are 100 mA or less.

Q: What is the difference between DSS4160T-7 and PBSS4160T,215 for substitution purposes?

A: Both devices meet the electrical requirements for DNLS160-7 substitution. The DSS4160T-7 is manufactured by Diodes Incorporated (same as the original part) and offers higher power dissipation (725 mW). The PBSS4160T,215 is manufactured by Nexperia and provides 400 mW power capability while maintaining the original 250 mV Vce saturation specification. Selection between these two depends on supplier preference and power budget requirements.

Q: Is the ZXTN2038FTA a suitable substitute?

A: The ZXTN2038FTA is an active Diodes Incorporated product with 60 V breakdown and 1 A capability in SOT-23-3 packaging. However, it specifies minimum hFE of 100 (versus 200 for DNLS160-7) and maximum Vce saturation of 500 mV (versus 250 mV for DNLS160-7). This part is suitable only for applications where lower current gain and higher saturation voltage are acceptable.

Q: Does package compatibility affect substitution?

A: Yes. The DNLS160-7 uses SOT-23-3 packaging. Direct substitutes must use SOT-23-3 or equivalent surface mount packages. The 2SC5866TLQ uses TSMT3 packaging, which requires PCB layout modification and is not a direct mechanical substitute. Verify PCB footprint compatibility before component selection.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference maintain ROHS3 compliance consistent with the DNLS160-7 specification.

Q: What is the significance of the -55°C to 150°C operating temperature range?

A: The DNLS160-7 specifies a junction temperature range of -55°C to 150°C. All recommended substitute parts maintain this full temperature range, ensuring compatibility in applications requiring extended temperature operation. Some substitute parts specify only a maximum junction temperature of 150°C without explicit minimum specification; verify datasheet details for applications requiring operation below 0°C.

Q: Can I use the 2SC5866TLQ as a substitute in a 1 A application?

A: The 2SC5866TLQ has a maximum collector current of 2 A, which exceeds the 1 A requirement. However, this device uses TSMT3 packaging instead of SOT-23-3, requiring PCB redesign. Additionally, the minimum hFE specification of 120 at 100 mA and 2 V does not directly correspond to DNLS160-7 test conditions. Use this part only if package change is acceptable and application parameters are verified against the 2SC5866TLQ datasheet.

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