DMTH8012LK3-13 Equivalent & Substitute Parts

Part Overview

The DMTH8012LK3-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 80V drain-to-source voltage and 50A continuous drain current in a surface mount TO-252-3 package. This device is classified as Active product status and is RoHS3 compliant. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required for design flexibility, inventory management, or supply chain continuity.

Substiute Parts

DMTH8012LK3-13

Diodes IncorporatedIn Stock: 2636DMTH8012LK3-13 Datasheet

Current PartRFQ

IPD60N10S412ATMA1

Infineon TechnologiesIn Stock: 5842IPD60N10S412ATMA1 Datasheet

MFR RecommendedRFQ

IRLR3110ZTRPBF

Infineon TechnologiesIn Stock: 23596IRLR3110ZTRPBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the DMTH8012LK3-13 are qualified based on the following electrical and mechanical criteria:

Primary Substitution Criteria:

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Package: TO-252-3 (DPAK) surface mount
• Drain-to-Source Voltage (Vdss): Equal to or greater than 80V
• Continuous Drain Current (Id): Equal to or greater than 50A
• Operating Temperature Range: -55°C to 175°C minimum
• RoHS3 Compliance: Required
• Moisture Sensitivity Level: 1 (Unlimited)

Substitute parts identified in this reference meet or exceed the electrical performance envelope of the main part while maintaining mechanical and thermal compatibility through identical or equivalent package specifications.

Parameter Comparison

Engineering Selection Recommendations

IPD60N10S412ATMA1 (Infineon Technologies)

This substitute provides higher voltage rating (100V vs. 80V) and higher continuous drain current (60A vs. 50A). The Rds On specification is superior at 12.2 mOhm compared to 16 mOhm. This part carries AEC-Q101 automotive qualification and is suitable for applications requiring enhanced performance margins. All compliance requirements (RoHS3, REACH Unaffected, MSL 1) are met. The part is available in high inventory (5794 pcs).

IRLR3110ZTRPBF (Infineon Technologies)

This substitute provides higher voltage rating (100V vs. 80V) with continuous drain current of 42A, which is below the main part specification of 50A. The Rds On specification is 14 mOhm, representing an improvement over the main part. Gate charge is higher at 48 nC versus 34 nC. This part is available in the highest inventory quantity (23547 pcs) and maintains all compliance requirements (RoHS3, REACH Unaffected, MSL 1). The HEXFET® series designation indicates established reliability in industrial applications.

Both substitute parts maintain TO-252-3 (DPAK) package compatibility, surface mount configuration, and the full operating temperature range of -55°C to 175°C.

Frequently Asked Questions (FAQ)

Q: Can the IPD60N10S412ATMA1 be used as a direct replacement for the DMTH8012LK3-13?

A: Yes. The IPD60N10S412ATMA1 meets all substitution criteria: N-Channel MOSFET, TO-252-3 package, higher voltage rating (100V), higher current rating (60A), superior Rds On performance (12.2 mOhm), identical gate charge (34 nC), matching operating temperature range, and equivalent compliance status (RoHS3, MSL 1).

Q: Can the IRLR3110ZTRPBF be used as a direct replacement for the DMTH8012LK3-13?

A: Conditional substitution applies. The IRLR3110ZTRPBF meets package, voltage, and compliance requirements. However, the continuous drain current rating is 42A, which is below the main part specification of 50A. This part is suitable for applications where the actual operating current does not exceed 42A. The Rds On performance (14 mOhm) and operating temperature range are compatible.

Q: What is the significance of the TO-252-3 package designation?

A: TO-252-3 (also designated DPAK or SC-63) is a surface mount package with two leads plus a thermal tab. All parts in this reference use this identical package, ensuring mechanical and thermal compatibility on printed circuit boards without layout modifications.

Q: Are there differences in gate charge between the substitute parts?

A: Yes. The DMTH8012LK3-13 and IPD60N10S412ATMA1 both specify 34 nC gate charge at 10V. The IRLR3110ZTRPBF specifies 48 nC at 4.5V. Higher gate charge may require adjustment to gate drive circuit timing in applications with tight switching frequency requirements.

Q: What does RoHS3 compliance mean for these parts?

A: RoHS3 compliance indicates the parts meet Restriction of Hazardous Substances Directive requirements, restricting the use of specific hazardous materials including lead, cadmium, and mercury. All parts in this reference are RoHS3 compliant.

Q: How does Rds On affect circuit performance?

A: Rds On (on-state drain-to-source resistance) directly impacts power dissipation and heat generation. Lower Rds On values result in reduced power loss. The IPD60N10S412ATMA1 (12.2 mOhm) and IRLR3110ZTRPBF (14 mOhm) both provide lower Rds On than the main part (16 mOhm), resulting in improved efficiency.

Q: What is the difference between Tc and Ta power dissipation ratings?

A: Tc (case temperature) and Ta (ambient temperature) represent different thermal measurement conditions. The DMTH8012LK3-13 specifies 2.6W (Ta), while the IPD60N10S412ATMA1 specifies 94W (Tc). These different reference conditions reflect different thermal management scenarios and are not directly comparable without additional thermal resistance data.

Q: Are these parts suitable for automotive applications?

A: The IPD60N10S412ATMA1 carries AEC-Q101 automotive qualification. The DMTH8012LK3-13 and IRLR3110ZTRPBF do not list automotive qualification in the provided specifications. Automotive application requirements should be verified against specific design standards.