DMTH8008SFG-13 Equivalent & Substitute Parts

Part Overview

The DMTH8008SFG-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, designed for surface mount applications in the PowerDI3333-8 package. This device operates at 80 V drain-to-source voltage with continuous drain current ratings of 17A (Ta) and 68A (Tc), delivering power dissipation capabilities of 1.2W (Ta) and 50W (Tc). The component is classified as Active product status and maintains full RoHS3 compliance. Identifying equivalent and substitute parts is necessary to ensure design flexibility, manage supply chain continuity, and accommodate varying procurement requirements while maintaining identical electrical and mechanical performance characteristics.

Substiute Parts

DMTH8008SFG-13

Diodes IncorporatedIn Stock: 968DMTH8008SFG-13 Datasheet

Current PartRFQ

DMTH8008SFGQ-13

Diodes IncorporatedIn Stock: 1144DMTH8008SFGQ-13 Datasheet

Parametric EquivalentRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the DMTH8008SFG-13 are identified based on strict parametric equivalence across all critical electrical and mechanical specifications. The substitution logic requires exact matching of the following parameters:

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Continuous Drain Current @ 25°C: 17A (Ta) and 68A (Tc)
• On-State Resistance (Rds On): 7 mOhm @ 14A, 10V
• Gate Threshold Voltage (Vgs(th)): 4V @ 1mA
• Gate Charge (Qg): 31.7 nC @ 10V
• Maximum Gate Voltage (Vgs): ±20V
• Input Capacitance (Ciss): 1945 pF @ 40V
• Power Dissipation: 1.2W (Ta) and 50W (Tc)
• Operating Temperature Range: -55°C to 175°C (TJ)
• Package Type: 8-PowerVDFN (PowerDI3333-8)
• Mounting Type: Surface Mount
• Compliance: RoHS3 Compliant, REACH Unaffected

Parts meeting these criteria are classified as parametric equivalents and direct substitutes. Additional qualifications such as automotive-grade certification (AEC-Q101) represent enhanced specifications that do not preclude substitution but indicate expanded application scope.

Parameter Comparison

Engineering Selection Recommendations

The DMTH8008SFGQ-13 is a direct parametric equivalent to the DMTH8008SFG-13. Both devices are manufactured by Diodes Incorporated and share identical electrical specifications, thermal characteristics, and mechanical packaging. Both parts maintain Active product status and full compliance with RoHS3 and REACH requirements.

The DMTH8008SFGQ-13 carries automotive-grade qualification (AEC-Q101), which indicates enhanced reliability screening and qualification for automotive applications. This qualification does not alter the core electrical or mechanical performance of the device and does not restrict its use in non-automotive applications. The automotive-qualified variant is suitable for applications requiring automotive-level reliability assurance.

Selection between these two parts depends on application requirements and supply chain considerations. Both parts are functionally interchangeable in circuit designs requiring an 80V, 68A (Tc) N-Channel MOSFET in the PowerDI3333-8 package. Current inventory levels are 914 units for DMTH8008SFG-13 and 1036 units for DMTH8008SFGQ-13.

Frequently Asked Questions (FAQ)

Q: Can the DMTH8008SFGQ-13 be used as a direct replacement for the DMTH8008SFG-13?

A: Yes. The DMTH8008SFGQ-13 is a parametric equivalent with identical electrical specifications, thermal ratings, and mechanical packaging. All critical parameters including Vdss, Id, Rds On, gate charge, and operating temperature range are identical. Both devices use the same 8-PowerVDFN package (PowerDI3333-8).

Q: What is the difference between DMTH8008SFG-13 and DMTH8008SFGQ-13?

A: The primary difference is that DMTH8008SFGQ-13 carries automotive-grade qualification (AEC-Q101), indicating enhanced reliability screening for automotive applications. All electrical and mechanical specifications are identical. The automotive qualification does not restrict use in non-automotive applications.

Q: Are both parts compatible with the same PCB layout and footprint?

A: Yes. Both parts use the identical 8-PowerVDFN package (PowerDI3333-8) and are surface mount devices. PCB layouts, footprints, and thermal management designs are fully compatible between the two parts.

Q: What are the key parameters that determine substitutability for this MOSFET?

A: Substitutability is determined by matching: FET type (N-Channel), technology (MOSFET), Vdss (80V), continuous drain current (17A Ta / 68A Tc), Rds On (7 mOhm @ 14A, 10V), gate threshold voltage (4V @ 1mA), gate charge (31.7 nC @ 10V), maximum gate voltage (±20V), input capacitance (1945 pF @ 40V), power dissipation (1.2W Ta / 50W Tc), operating temperature range (-55°C to 175°C), package type (8-PowerVDFN), and mounting type (Surface Mount).

Q: Can these parts be used in high-temperature applications?

A: Yes. Both parts are rated for operating junction temperatures from -55°C to 175°C (TJ), supporting high-temperature applications within this range. Thermal management design must account for the specified power dissipation ratings of 1.2W (Ta) and 50W (Tc).

Q: Are there any compliance or regulatory differences between the two parts?

A: Both parts are RoHS3 compliant and REACH unaffected. The DMTH8008SFGQ-13 carries additional AEC-Q101 automotive qualification, which represents enhanced reliability screening but does not alter compliance status or restrict application scope.

Q: What is the significance of the PowerDI3333-8 package designation?

A: PowerDI3333-8 is the supplier device package designation for the 8-PowerVDFN surface mount package used by both parts. This package provides optimized thermal performance and is designed for high-current applications. The package designation ensures mechanical and thermal compatibility between equivalent parts.