DMTH6016LFVW-13 Equivalent & Substitute Parts

Part Overview

The DMTH6016LFVW-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 60V drain-to-source voltage with 41A continuous drain current at 25°C. This device is housed in a PowerDI3333-8 (SWP) Type UX surface mount package with wettable flank construction. The part is qualified to AEC-Q101 automotive standards and carries Active product status. Equivalent and substitute parts are identified when component availability is limited, supply chain disruptions occur, or design flexibility is required while maintaining electrical and mechanical compatibility within specified parameter tolerances.

Substiute Parts

DMTH6016LFVW-13

Diodes IncorporatedIn Stock: 793DMTH6016LFVW-13 Datasheet

Current PartRFQ

DMTH6016LFVW-7

Diodes IncorporatedIn Stock: 866DMTH6016LFVW-7 Datasheet

Parametric EquivalentRFQ

CSD18543Q3AT

Texas InstrumentsIn Stock: 2071CSD18543Q3AT Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the DMTH6016LFVW-13 are classified into two categories based on parametric equivalence and manufacturer recommendation:

Parametric Equivalent: Parts that maintain identical or functionally equivalent electrical specifications across all critical parameters including Vdss, Id, Rds On, Vgs(th), gate charge, and input capacitance. These parts are interchangeable at the circuit level without design modification.

Manufacturer Recommended: Parts that meet the same voltage and current ratings but may exhibit variations in secondary parameters such as power dissipation capability, input capacitance, or operating temperature range. These parts are suitable for applications where the primary electrical requirements are met, though thermal management or switching characteristics may differ.

The following parameters determine substitution eligibility:

• Drain to Source Voltage (Vdss): 60V minimum
• Continuous Drain Current (Id): 41A minimum at 25°C
• On-Resistance (Rds On): 16mOhm maximum at specified conditions
• Gate Threshold Voltage (Vgs(th)): 2.5V maximum
• Package compatibility: Surface mount, 8-pin configuration
• Qualification: AEC-Q101 automotive grade

Parameter Comparison

Engineering Selection Recommendations

DMTH6016LFVW-7 (Parametric Equivalent): This part is a direct parametric equivalent to the DMTH6016LFVW-13, manufactured by Diodes Incorporated. Both devices share identical electrical specifications, package configuration, and AEC-Q101 automotive qualification. The DMTH6016LFVW-7 differs only in tape reel configuration and represents a functionally interchangeable substitute. Selection of this part is appropriate for applications requiring identical performance characteristics with no circuit redesign.

CSD18543Q3AT (Manufacturer Recommended): This Texas Instruments NexFET™ device meets the primary voltage and current requirements with a higher continuous drain current rating of 60A at Tc. The CSD18543Q3AT exhibits superior power dissipation capability (66W at Tc versus 1.2W at Ta) and lower gate charge (14.5nC versus 15.1nC), resulting in improved thermal performance and faster switching characteristics. However, this part does not carry AEC-Q101 automotive qualification and operates to a maximum junction temperature of 150°C compared to 175°C for the DMTH6016LFVW-13. The CSD18543Q3AT is suitable for non-automotive applications or designs where the enhanced thermal capability justifies the qualification difference. Input capacitance is higher at 1150pF, which may affect gate drive requirements in high-frequency switching applications.

Frequently Asked Questions (FAQ)

Q: Can DMTH6016LFVW-7 be used as a direct replacement for DMTH6016LFVW-13?

A: Yes. The DMTH6016LFVW-7 is a parametric equivalent with identical electrical specifications, package type, and AEC-Q101 qualification. No circuit modifications are required for substitution.

Q: What are the key differences between DMTH6016LFVW-13 and CSD18543Q3AT?

A: The CSD18543Q3AT provides higher continuous drain current (60A versus 41A at Tc), superior power dissipation (66W versus 1.2W), and lower gate charge. However, it lacks AEC-Q101 automotive qualification and has a lower maximum operating temperature (150°C versus 175°C). Input capacitance is also higher at 1150pF.

Q: Is the CSD18543Q3AT suitable for automotive applications?

A: The CSD18543Q3AT is not qualified to AEC-Q101 automotive standards. Applications requiring automotive-grade components should use DMTH6016LFVW-13 or DMTH6016LFVW-7.

Q: Are all substitute parts available in the same packaging format?

A: DMTH6016LFVW-13 and DMTH6016LFVW-7 are supplied in Tape & Reel (TR) format. CSD18543Q3AT is available in Cut Tape (CT) and Digi-Reel® format. All three parts use the 8-PowerVDFN surface mount package.

Q: What is the impact of higher input capacitance in the CSD18543Q3AT?

A: The CSD18543Q3AT has input capacitance of 1150pF compared to 939pF in the DMTH6016LFVW-13. Higher input capacitance requires greater gate charge delivery and may increase switching losses in high-frequency applications. Gate drive circuit design should account for this parameter.

Q: Can these parts be used interchangeably in PCB layouts?

A: Yes. All three parts use the 8-PowerVDFN package with identical pin configurations and footprints. PCB layouts require no modification for substitution.

Q: What is the significance of the AEC-Q101 qualification?

A: AEC-Q101 qualification indicates the device meets automotive industry reliability and quality standards. DMTH6016LFVW-13 and DMTH6016LFVW-7 carry this qualification; CSD18543Q3AT does not. Automotive applications must use qualified parts.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. DMTH6016LFVW-13, DMTH6016LFVW-7, and CSD18543Q3AT are all ROHS3 compliant with MSL rating of 1 (Unlimited).