DMTH6016LFDFWQ-7 Equivalent & Substitute MOSFETs Reference

Part Overview

The DMTH6016LFDFWQ-7 is an N-channel MOSFET from Diodes Incorporated, categorized under Transistors, FETs, MOSFETs. It is supplied in a Tape & Reel (TR) package, featuring a 60 V drain-to-source voltage, 9.4A continuous drain current, and a maximum Rds(on) of 18mOhm at 10A and 10V. The device is qualified for automotive applications, meeting AEC-Q101 requirements, and offers a surface mount U-DFN2020-6 (SWP) (Type F) package.

Alternative models may be required due to fluctuations in inventory, sourcing preferences, or qualification needs for new production batches. This reference identifies direct equivalents and substitutes strictly based on explicit, matching key electrical and mechanical parameters.

Key Parameters

Parameter	Description
FET Type	N-Channel
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	9.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	18mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15.3 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	925 pF @ 30 V
Power Dissipation (Max)	1.06W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	U-DFN2020-6 (SWP) (Type F)
Package / Case	6-UDFN Exposed Pad
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
Qualification	AEC-Q101

Substitute Part Grouping Explanation

Substitution is based strictly on equivalence or matching values for all critical electrical and mechanical parameters: FET type, drain-to-source voltage, continuous drain current, Rds(on), gate threshold voltage, gate charge, maximum Vgs, input capacitance, power dissipation, operating temperature, mounting type, package type, RoHS status, MSL, REACH status, and automotive qualification (AEC-Q101).

All substitute part numbers present identical values across these critical parameters and are categorized within the same product family and physical package. Therefore, they can be considered functionally interchangeable within the provided constraints.

Parameter Comparison

Parameter	DMTH6016LFDFWQ-7	DMTH6016LFDFW-7	DMTH6016LFDFWQ-13	DMTH6016LFDFWQ-7R
Manufacturer	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Drain to Source Voltage (Vdss)	60 V	60 V	60 V	60 V
Current - Continuous Drain (Id) @ 25°C	9.4A (Ta)	9.4A (Ta)	9.4A (Ta)	9.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	4.5V, 10V	4.5V, 10V	4.5V, 10V
Rds On (Max) @ Id, Vgs	18mOhm @ 10A, 10V	18mOhm @ 10A, 10V	18mOhm @ 10A, 10V	18mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA	3V @ 250µA	3V @ 250µA	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15.3 nC @ 10 V	15.3 nC @ 10 V	15.3 nC @ 10 V	15.3 nC @ 10 V
Vgs (Max)	±20V	±20V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	925 pF @ 30 V	925 pF @ 30 V	925 pF @ 30 V	925 pF @ 30 V
Power Dissipation (Max)	1.06W (Ta)	1.06W (Ta)	1.06W (Ta)	1.06W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	U-DFN2020-6 (SWP) (Type F)	U-DFN2020-6 (SWP) (Type F)	U-DFN2020-6 (SWP) (Type F)	U-DFN2020-6 (SWP) (Type F)
Package / Case	6-UDFN Exposed Pad	6-UDFN Exposed Pad	6-UDFN Exposed Pad	6-UDFN Exposed Pad
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected
Qualification	AEC-Q101	AEC-Q101	AEC-Q101	AEC-Q101

Engineering Selection Recommendations

All listed substitute MOSFETs—DMTH6016LFDFW-7, DMTH6016LFDFWQ-13, and DMTH6016LFDFWQ-7R—are RoHS3 compliant, REACH unaffected, and possess AEC-Q101 automotive qualification. Each meets the same Moisture Sensitivity Level (MSL 1 Unlimited) as the original part. All substitutes are active status products and match the key parameters and compliance required for direct substitution in automotive and general-purpose applications.

Frequently Asked Questions (FAQ)

Q1: How are equivalent MOSFET substitute parts determined in this product category?
A1: Substitutes are selected when all key parameters—such as FET type, maximum voltage, drain current, Rds(on), threshold voltage, gate charge, capacitance, power dissipation, temperature range, package, RoHS status, and qualification—explicitly match the original part.

Q2: Can a substitute with a different package or pinout be used?
A2: Only MOSFETs with identical packages (U-DFN2020-6 (SWP) (Type F), 6-UDFN Exposed Pad) and mounting types (Surface Mount) are considered direct substitutes.

Q3: Are substitutes compliant with RoHS and REACH regulations?
A3: All listed substitutes are ROHS3 compliant and REACH unaffected, matching the compliance status of the main part.

Q4: Are all substitutes qualified for automotive applications?
A4: All listed equivalents possess AEC-Q101 automotive qualification, matching the original part's automotive grade requirements.

Q5: Do the substitute parts maintain the same electrical performance?
A5: All substitutes match the main part in maximum drain-to-source voltage, continuous drain current, Rds(on), and other principal electrical parameters.

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