DMTH6010LPSQ-13 N-Channel MOSFET 60V 13.5A Equivalent & Substitute Parts

Part Overview

The DMTH6010LPSQ-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 60V drain-to-source voltage with 13.5A continuous drain current at 25°C (Ta) and 100A at case temperature (Tc). This device is housed in a PowerDI5060-8 surface mount package and is classified as Active product status with full RoHS3 compliance. The part is available in Tape & Reel packaging with 3111 pieces in current inventory.

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, gate charge, and thermal performance specifications. Substitute parts must maintain compatibility with the 8-PowerTDFN package footprint and surface mount assembly requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current @ 25°C (Ta)	13.5	A
Continuous Drain Current @ Case (Tc)	100	A
Rds On (Max) @ 20A, 10V	8	mOhm
Gate Threshold Voltage @ 250µA	3	V
Gate Charge @ 10V	41.3	nC
Input Capacitance @ 30V	2090	pF
Power Dissipation (Ta)	2.6	W
Power Dissipation (Tc)	136	W
Operating Temperature Range	-55 to 175	°C
Package Type	8-PowerTDFN	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the DMTH6010LPSQ-13 are classified into two categories based on substitution criteria:

Parametric Equivalent: Parts that maintain identical or equivalent electrical specifications across all critical parameters. The DMTH6010LPS-13 from Diodes Incorporated is a parametric equivalent, sharing the same base product number (DMTH6010), voltage rating (60V), continuous drain current (13.5A Ta / 100A Tc), on-resistance (8mOhm @ 20A, 10V), gate charge (41.3 nC @ 10V), and operating temperature range (-55°C to 175°C). The primary difference is packaging format (Tape & Reel vs. standard reel configuration).

Manufacturer Recommended Alternatives: Parts that exceed the minimum electrical requirements while maintaining the 60V voltage rating and surface mount compatibility. These alternatives provide enhanced performance characteristics such as higher continuous drain current ratings, lower on-resistance, or reduced gate charge, making them suitable for applications requiring improved thermal performance or switching efficiency.

Substitution is determined by the following key parameters:

Drain-to-Source Voltage (Vdss) ≥ 60V
Continuous Drain Current (Id) ≥ 13.5A @ 25°C
On-Resistance (Rds On) ≤ 8mOhm @ specified conditions
Gate Threshold Voltage (Vgs(th)) within ±20V maximum gate voltage
Surface Mount package compatibility (8-PowerTDFN or equivalent footprint)
Operating temperature range ≥ -55°C to 150°C minimum
RoHS3 compliance and MSL Level 1 rating

Parameter Comparison

Parameter	DMTH6010LPSQ-13	DMTH6010LPS-13	BSZ100N06NSATMA1	CSD18534Q5AT	FDMS86520L
Manufacturer	Diodes Inc.	Diodes Inc.	Infineon	Texas Instruments	onsemi
Vdss (V)	60	60	60	60	60
Id @ 25°C Ta (A)	13.5	13.5	—	50	13.5
Id @ Case Tc (A)	100	100	40	—	22
Rds On (mOhm)	8 @ 20A, 10V	8 @ 20A, 10V	10 @ 20A, 10V	9.8 @ 14A, 10V	8.2 @ 13.5A, 10V
Vgs(th) (V)	3 @ 250µA	3 @ 250µA	3.3 @ 14µA	2.3 @ 250µA	3 @ 250µA
Gate Charge @ 10V (nC)	41.3	41.3	15	11.1	63
Ciss @ 30V (pF)	2090	2090	1075	1770	4615
Power Dissipation Ta (W)	2.6	2.6	2.1	3.1	2.5
Power Dissipation Tc (W)	136	136	36	77	69
Operating Temp Range (°C)	-55 to 175	-55 to 175	-55 to 150	-55 to 150	-55 to 150
Package	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN
RoHS Status	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

DMTH6010LPS-13 (Diodes Incorporated): This part is a direct parametric equivalent to the DMTH6010LPSQ-13, offering identical electrical specifications and thermal performance. Both parts share the same base product number and are manufactured by Diodes Incorporated. Selection of this substitute is appropriate when the original part number is unavailable and packaging format flexibility is acceptable. Both parts maintain Active product status and full RoHS3 compliance with MSL Level 1 rating.

BSZ100N06NSATMA1 (Infineon Technologies): This OptiMOS™ series device provides a 60V rating with enhanced gate charge characteristics (15 nC @ 10V versus 41.3 nC). The part delivers 40A continuous drain current at case temperature, which exceeds the DMTH6010LPSQ-13 specification. On-resistance is slightly higher at 10 mOhm @ 20A, 10V. This substitute is suitable for applications where reduced switching losses and improved efficiency are prioritized. Operating temperature range is limited to -55°C to 150°C. Active product status and RoHS3 compliance are maintained.

CSD18534Q5AT (Texas Instruments): This NexFET™ series MOSFET provides the highest continuous drain current rating at 50A @ 25°C (Ta), with significantly reduced gate charge (11.1 nC @ 4.5V) and lower input capacitance (1770 pF @ 30V). On-resistance is 9.8 mOhm @ 14A, 10V. This substitute is recommended for high-frequency switching applications and designs requiring superior thermal performance. Operating temperature range is -55°C to 150°C. Active product status and RoHS3 compliance are confirmed.

FDMS86520L (onsemi): This PowerTrench® series device maintains the 60V rating and 13.5A continuous drain current specification at 25°C (Ta), with on-resistance of 8.2 mOhm @ 13.5A, 10V. Gate charge is higher at 63 nC @ 10V, and input capacitance is significantly elevated at 4615 pF @ 30V. Continuous drain current at case temperature is 22A. This substitute provides direct electrical compatibility with minimal design changes. Operating temperature range is -55°C to 150°C. Active product status and RoHS3 compliance are maintained.

All substitute parts are classified as Active products with RoHS3 compliance and MSL Level 1 moisture sensitivity rating, ensuring compatibility with standard surface mount assembly processes and environmental regulations.

Frequently Asked Questions (FAQ)

Q: Can DMTH6010LPS-13 be used as a direct replacement for DMTH6010LPSQ-13?

A: Yes. DMTH6010LPS-13 is a parametric equivalent with identical electrical specifications, including 60V Vdss, 13.5A continuous drain current @ 25°C, 8 mOhm on-resistance @ 20A/10V, and 41.3 nC gate charge @ 10V. Both parts share the same base product number and are manufactured by Diodes Incorporated. The primary difference is packaging format. Both maintain RoHS3 compliance and MSL Level 1 rating.

Q: What are the key differences between the DMTH6010LPSQ-13 and the higher-current alternatives?

A: BSZ100N06NSATMA1 and CSD18534Q5AT provide higher continuous drain current ratings (40A and 50A respectively) and significantly lower gate charge values (15 nC and 11.1 nC), resulting in reduced switching losses. FDMS86520L maintains the same 13.5A rating but with higher gate charge (63 nC). All alternatives maintain the 60V voltage rating and 8-PowerTDFN package compatibility.

Q: Are all substitute parts compatible with the 8-PowerTDFN package footprint?

A: Yes. All listed substitute parts utilize the 8-PowerTDFN surface mount package or equivalent footprint designation. Physical and electrical pad configurations are compatible with standard PCB layouts designed for the DMTH6010LPSQ-13.

Q: Which substitute part should be selected for applications requiring maximum thermal performance?

A: CSD18534Q5AT provides the highest continuous drain current rating (50A @ Ta) and lowest gate charge (11.1 nC @ 4.5V), resulting in superior thermal performance and reduced switching losses. BSZ100N06NSATMA1 offers the second-best thermal characteristics with 40A continuous drain current and 15 nC gate charge.

Q: Do all substitute parts meet RoHS3 and MSL Level 1 requirements?

A: Yes. All substitute parts listed—DMTH6010LPS-13, BSZ100N06NSATMA1, CSD18534Q5AT, and FDMS86520L—are RoHS3 compliant with MSL Level 1 (Unlimited) moisture sensitivity rating, matching the compliance profile of the DMTH6010LPSQ-13.

Q: What is the impact of higher gate charge on circuit design?

A: Gate charge directly affects switching speed and driver power requirements. Lower gate charge (BSZ100N06NSATMA1 at 15 nC, CSD18534Q5AT at 11.1 nC) enables faster switching and reduces gate driver power dissipation. Higher gate charge (FDMS86520L at 63 nC) requires more gate drive energy but may provide improved noise immunity in certain applications.

Q: Are there operating temperature range limitations with substitute parts?

A: DMTH6010LPSQ-13 and DMTH6010LPS-13 support -55°C to 175°C operating range. BSZ100N06NSATMA1, CSD18534Q5AT, and FDMS86520L are limited to -55°C to 150°C. Applications requiring operation above 150°C must use the original Diodes Incorporated parts.

Q: How does on-resistance variation affect power dissipation?

A: On-resistance directly determines conduction losses. DMTH6010LPSQ-13 and FDMS86520L both specify 8 mOhm (8.2 mOhm for FDMS86520L), while BSZ100N06NSATMA1 is 10 mOhm and CSD18534Q5AT is 9.8 mOhm. Lower on-resistance reduces power dissipation at high current levels, improving thermal performance and efficiency.

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