DMTH6005LCT N-Channel 60V 100A MOSFET Equivalent & Substitute Parts

Part Overview

The DMTH6005LCT is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by Diodes Incorporated, rated for 60V drain-to-source voltage and 100A continuous drain current at case temperature. The device is housed in a TO-220-3 through-hole package and is classified as Active product status with AEC-Q101 automotive qualification. This part is RoHS3 compliant with MSL Level 1 (unlimited moisture sensitivity).

Equivalent and substitute parts are identified when design requirements permit operation within the specified electrical and mechanical parameters of this product category. Substitution is necessary when primary part availability is limited, supply chain constraints exist, or when design flexibility allows for alternative components meeting the same functional requirements.

Substiute Parts

DMTH6005LCT

Diodes IncorporatedIn Stock: 2385DMTH6005LCT Datasheet

Current PartRFQ

FDP070AN06A0

Fairchild SemiconductorIn Stock: 15169FDP070AN06A0 Datasheet

MFR RecommendedRFQ

IRF1407PBF

International RectifierIn Stock: 42184IRF1407PBF Datasheet

MFR RecommendedRFQ

IXTP120N075T2

IXYSIn Stock: 862IXTP120N075T2 Datasheet

MFR RecommendedRFQ

STP140NF75

STMicroelectronicsIn Stock: 5351STP140NF75 Datasheet

MFR RecommendedRFQ

SUP90N06-6M0P-E3

Vishay SiliconixIn Stock: 2154SUP90N06-6M0P-E3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the DMTH6005LCT are identified based on the following substitution criteria:

Primary Substitution Parameters:

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Package Type: TO-220-3 (through-hole mounting)
• Operating Temperature Range: -55°C to 175°C (TJ)
• Maximum Gate Voltage (Vgs Max): ±20V

Electrical Compatibility Parameters:

• Drain-to-Source Voltage (Vdss): 60V or higher
• Continuous Drain Current (Id): 100A or higher at case temperature
• On-State Resistance (Rds On): Comparable or lower values
• Gate Threshold Voltage (Vgs(th)): Within acceptable switching range
• Gate Charge (Qg): Lower values preferred for faster switching
• Input Capacitance (Ciss): Lower values preferred for reduced drive requirements

Substitutes are grouped into two categories:

Category A - Direct Voltage Class Substitutes (60V Rating): Parts maintaining the 60V Vdss rating with equal or greater current capacity and compatible electrical characteristics.

Category B - Higher Voltage Class Substitutes (75V Rating): Parts with elevated Vdss ratings (75V) that provide enhanced voltage margin while maintaining or exceeding current capacity. These substitutes are suitable for applications where higher voltage headroom is acceptable or beneficial.

All substitute parts maintain N-Channel MOSFET technology, TO-220-3 package configuration, and -55°C to 175°C operating temperature range.

Parameter Comparison

Engineering Selection Recommendations

Category A - 60V Direct Voltage Class Substitutes:

SUP90N06-6M0P-E3 (Vishay Siliconix TrenchFET®): This substitute maintains the 60V Vdss rating with 90A continuous drain current, representing a 10A reduction from the DMTH6005LCT. The device exhibits identical on-state resistance (6 mOhm @ 20A, 10V) and lower gate threshold voltage (4.5V vs. 3V), resulting in slightly higher gate charge (120 nC vs. 47.1 nC). RoHS3 compliance and MSL Level 1 rating are confirmed. REACH status is listed as Affected. This part is suitable for applications where the 90A current rating is sufficient and where the higher gate charge can be accommodated by the drive circuit.

FDP070AN06A0 (Fairchild Semiconductor PowerTrench®): This substitute maintains the 60V Vdss rating with 80A continuous drain current at case temperature, representing a 20A reduction from the DMTH6005LCT. On-state resistance is 7 mOhm @ 80A, 10V, slightly higher than the primary part. Gate threshold voltage is 4V @ 250µA. Gate charge is 66 nC @ 10V. Power dissipation capability is 175W (Tc). This part is suitable for applications where current requirements do not exceed 80A and where the slightly elevated on-state resistance is acceptable.

Category B - 75V Higher Voltage Class Substitutes:

IXTP120N075T2 (IXYS TrenchT2™): This substitute elevates the Vdss rating to 75V with 120A continuous drain current, exceeding the DMTH6005LCT current capacity by 20A. On-state resistance is 7.7 mOhm @ 60A, 10V. Gate charge is 78 nC @ 10V, representing a 65% increase from the primary part. Input capacitance is 4740 pF @ 25V. RoHS3 compliance and MSL Level 1 rating are confirmed. This part is suitable for applications requiring higher voltage margin with increased current capacity.

STP140NF75 (STMicroelectronics STripFET™ III): This substitute elevates the Vdss rating to 75V with 120A continuous drain current, exceeding the DMTH6005LCT current capacity by 20A. On-state resistance is 7.5 mOhm @ 70A, 10V. Gate charge is 218 nC @ 10V, representing a 363% increase from the primary part. Power dissipation capability is 310W (Tc). RoHS3 compliance and MSL Level 1 rating are confirmed. The significantly higher gate charge requires verification that the drive circuit can accommodate the increased switching energy requirements.

IRF1407PBF (International Rectifier HEXFET®): This substitute elevates the Vdss rating to 75V with 130A continuous drain current, exceeding the DMTH6005LCT current capacity by 30A. On-state resistance is 7.8 mOhm @ 78A, 10V. Gate charge is 250 nC @ 10V, representing a 430% increase from the primary part. Input capacitance is 5600 pF @ 25V. Power dissipation capability is 330W (Tc). The substantially higher gate charge and input capacitance require verification that the drive circuit can accommodate the increased switching energy and capacitive loading.

Selection Basis: All substitute parts maintain N-Channel MOSFET technology, TO-220-3 package configuration, and -55°C to 175°C operating temperature range. Selection between Category A and Category B substitutes depends on whether the application circuit can tolerate the elevated Vdss rating. Category A substitutes are appropriate for circuits designed specifically for 60V operation. Category B substitutes provide enhanced voltage margin and are suitable for circuits with flexible voltage specifications or where higher voltage headroom is beneficial. Gate charge and input capacitance differences must be evaluated against drive circuit capabilities.

Frequently Asked Questions (FAQ)

Q1: Can the DMTH6005LCT be directly replaced with any of these substitute parts without circuit modification?

A: Direct replacement depends on the application circuit design. All substitute parts maintain the same N-Channel MOSFET technology, TO-220-3 package configuration, and -55°C to 175°C operating temperature range. However, differences in gate charge (Qg), input capacitance (Ciss), and drain-to-source voltage (Vdss) rating must be evaluated. Category A substitutes (SUP90N06-6M0P-E3, FDP070AN06A0) maintain the 60V Vdss rating and are more likely to be direct replacements. Category B substitutes (IXTP120N075T2, STP140NF75, IRF1407PBF) feature elevated 75V Vdss ratings and require verification that the circuit can operate at this higher voltage. Gate charge differences affect switching speed and drive circuit power dissipation.

Q2: What is the significance of the gate charge (Qg) parameter when selecting a substitute?

A: Gate charge represents the total charge required to switch the MOSFET from off-state to on-state at a specified gate voltage. The DMTH6005LCT has a gate charge of 47.1 nC @ 10V. Substitute parts range from 66 nC (FDP070AN06A0) to 250 nC (IRF1407PBF). Higher gate charge requires the drive circuit to supply more charge per switching cycle, increasing switching losses and potentially requiring a more robust gate driver. If the existing drive circuit has limited current capability, substitutes with significantly higher gate charge (such as STP140NF75 at 218 nC or IRF1407PBF at 250 nC) may cause slower switching transitions or excessive driver power dissipation.

Q3: Why do some substitute parts have higher drain-to-source voltage (Vdss) ratings?

A: The DMTH6005LCT is rated for 60V Vdss, while Category B substitutes are rated for 75V Vdss. Higher Vdss ratings provide increased voltage margin and allow operation in circuits with higher supply voltages or transient overvoltage conditions. However, higher Vdss ratings typically result in increased on-state resistance, input capacitance, and gate charge. Selection of a higher-voltage substitute is appropriate only if the application circuit can tolerate these trade-offs or if the higher voltage margin is beneficial for circuit reliability.

Q4: What is the difference between continuous drain current (Id) ratings at Ta (ambient temperature) versus Tc (case temperature)?

A: Continuous drain current is specified at two temperature conditions. Current at Ta (ambient temperature, typically 25°C) represents the maximum current the device can sustain in free air without external cooling. Current at Tc (case temperature) represents the maximum current when the device case is maintained at a specified temperature (typically 25°C) through active cooling or thermal management. The DMTH6005LCT is rated for 100A (Tc), indicating this current is achievable with proper thermal management. Substitute parts with lower Tc ratings (such as FDP070AN06A0 at 80A Tc) require verification that the application current requirements do not exceed the substitute's rating.

Q5: Are all substitute parts RoHS3 compliant?

A: RoHS3 compliance is confirmed for DMTH6005LCT, SUP90N06-6M0P-E3, IXTP120N075T2, and STP140NF75. Compliance status is not specified in the provided data for FDP070AN06A0 and IRF1407PBF. If RoHS3 compliance is a requirement for the application, verification with the manufacturer is necessary for parts where compliance status is not explicitly stated.

Q6: What does MSL Level 1 (Unlimited) moisture sensitivity mean?

A: MSL (Moisture Sensitivity Level) Level 1 indicates that the component has unlimited shelf life and does not require special moisture control during storage or handling. This is the least restrictive moisture sensitivity classification. The DMTH6005LCT and most substitute parts (SUP90N06-6M0P-E3, IXTP120N075T2, STP140NF75) are rated MSL Level 1, meaning standard storage and handling procedures are sufficient. Moisture sensitivity level does not affect electrical performance but impacts supply chain logistics and component shelf life management.

Q7: How does on-state resistance (Rds On) affect circuit performance?

A: On-state resistance determines the voltage drop across the MOSFET when conducting current, directly affecting power dissipation and heat generation. The DMTH6005LCT has Rds On of 6 mOhm @ 20A, 10V. Substitute parts range from 6 mOhm (SUP90N06-6M0P-E3) to 7.8 mOhm (IRF1407PBF). At high current levels, even small differences in Rds On result in significant power dissipation variations. For example, at 100A, a 1 mOhm difference results in 10W additional power dissipation. Selection of a substitute with comparable or lower Rds On is preferred to maintain thermal performance.

Q8: Can the DMTH6005LCT be used in automotive applications?

A: The DMTH6005LCT carries AEC-Q101 automotive qualification, indicating it meets automotive industry reliability and quality standards. Not all substitute parts explicitly state automotive qualification in the provided data. If automotive qualification is a requirement, verification with the manufacturer is necessary for substitute parts where this certification is not explicitly confirmed.

Q9: What package compatibility considerations apply to these substitutes?

A: All substitute parts use TO-220-3 or TO-220AB package configurations, which are mechanically and electrically compatible through-hole packages. TO-220-3 and TO-220AB are functionally equivalent for most applications, with minor dimensional variations that do not affect PCB footprint compatibility. All parts feature three leads (Gate, Drain, Source) in the same pin configuration. PCB layout and thermal management considerations remain consistent across all substitutes.

Q10: How should input capacitance (Ciss) differences be evaluated?

A: Input capacitance represents the capacitive load presented by the MOSFET to the gate driver circuit. The DMTH6005LCT has Ciss of 2962 pF @ 30V. Substitute parts range from 3000 pF (FDP070AN06A0) to 5600 pF (IRF1407PBF). Higher input capacitance increases the charge required for switching and can slow switching transitions if the gate driver has limited current capability. For applications with high switching frequency or limited gate driver current, substitutes with lower input capacitance (FDP070AN06A0, IXTP120N075T2) are preferred. For applications with robust gate drivers, higher input capacitance is generally acceptable.