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DMTH6004SPS-13 Equivalent & Substitute Parts
Part Overview
The DMTH6004SPS-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 60V drain-to-source voltage with 25A continuous drain current at 25°C (Ta) and 100A at case temperature (Tc). This device is housed in a PowerDI5060-8 surface mount package and is classified as Active product status with full RoHS3 compliance. The part is suitable for power switching applications requiring efficient thermal management and compact form factors.
Equivalent and substitute parts are identified when design requirements permit variations in specific electrical parameters while maintaining functional compatibility within the application circuit. Substitution may be necessary due to inventory availability, supply chain considerations, or design optimization for specific thermal or performance conditions.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 60 | V |
| Continuous Drain Current @ 25°C (Ta) | 25 | A |
| Continuous Drain Current @ Case (Tc) | 100 | A |
| On-Resistance (Rds On) @ 50A, 10V | 3.1 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 4 | V |
| Gate Charge (Qg) @ 10V | 95.4 | nC |
| Input Capacitance (Ciss) @ 30V | 4556 | pF |
| Power Dissipation (Ta) | 2.1 | W |
| Power Dissipation (Tc) | 167 | W |
| Operating Temperature Range | -55 to 175 | °C |
| Package Type | 8-PowerTDFN | — |
| Mounting Type | Surface Mount | — |
Substitute Part Grouping Explanation
Substitute parts for the DMTH6004SPS-13 are classified based on the following electrical and mechanical compatibility criteria:
Primary Substitution Criteria:
- Drain-to-Source Voltage (Vdss): 60V or higher
- Continuous Drain Current (Ta): 20A or higher
- Continuous Drain Current (Tc): 50A or higher
- On-Resistance (Rds On): 3.7mOhm or lower
- Gate Threshold Voltage (Vgs(th)): 4.5V or lower
- Operating Temperature Range: Minimum -55°C to 150°C or higher
- Package Type: 8-PowerTDFN or 8-PQFN (5x6) surface mount
- Technology: N-Channel MOSFET (Metal Oxide)
- Compliance: RoHS3 compliant, MSL 1, REACH Unaffected
Parametric Equivalent (Same Manufacturer): DMTH6004SPSQ-13 shares identical electrical specifications and package configuration with the main part, differing only in product designation and inventory availability.
Manufacturer Recommended Alternatives (onsemi): FDMS030N06B, FDMS037N08B, and FDMS86540 are onsemi PowerTrench® series devices that meet or exceed the primary substitution criteria with variations in specific parameters such as Vdss, gate charge, and input capacitance.
Parameter Comparison
| Parameter | DMTH6004SPS-13 | DMTH6004SPSQ-13 | FDMS030N06B | FDMS037N08B | FDMS86540 |
|---|---|---|---|---|---|
| Manufacturer | Diodes Inc. | Diodes Inc. | onsemi | onsemi | onsemi |
| Vdss (V) | 60 | 60 | 60 | 75 | 60 |
| Id @ Ta (A) | 25 | 25 | 22.1 | — | 20 |
| Id @ Tc (A) | 100 | 100 | 100 | 100 | 50 |
| Rds On @ 50A, 10V (mOhm) | 3.1 | 3.1 | 3 | 3.7 | 3.4 |
| Vgs(th) @ 250µA (V) | 4 | 4 | 4.5 | 4.5 | 4 |
| Qg @ 10V (nC) | 95.4 | 95.4 | 75 | 100 | 90 |
| Ciss @ 30V (pF) | 4556 | 4556 | 7560 | 5915 | 6435 |
| Power Dissipation @ Ta (W) | 2.1 | 2.1 | 2.5 | 0.83 | 2.5 |
| Power Dissipation @ Tc (W) | 167 | 167 | 104 | 104.2 | 96 |
| Operating Temperature (°C) | -55 to 175 | -55 to 175 | -55 to 150 | -55 to 150 | -55 to 150 |
| Package | 8-PowerTDFN | 8-PowerTDFN | 8-PQFN (5x6) | 8-PQFN (5x6) | 8-PQFN (5x6) |
| RoHS Status | ROHS3 | ROHS3 | ROHS3 | ROHS3 | ROHS3 |
Engineering Selection Recommendations
DMTH6004SPSQ-13 (Diodes Incorporated): This part is a parametric equivalent to the main part DMTH6004SPS-13, offering identical electrical specifications and package configuration. Selection of this substitute is appropriate when inventory of the primary part is unavailable. Both parts maintain Active product status and full RoHS3 compliance. The DMTH6004SPSQ-13 has higher inventory availability (3607 pcs vs. 669 pcs), making it suitable for high-volume production requirements.
FDMS030N06B (onsemi PowerTrench®): This device meets the primary substitution criteria with 60V Vdss, 22.1A continuous drain current at Ta, and 100A at Tc. The on-resistance of 3mOhm is superior to the main part. However, the maximum operating temperature is limited to 150°C compared to 175°C for the DMTH6004SPS-13. This substitute is suitable for applications where the reduced temperature range does not present a constraint. The 8-PQFN (5x6) package requires PCB layout verification for pin compatibility.
FDMS037N08B (onsemi PowerTrench®): This device features a higher Vdss rating of 75V, providing additional voltage margin in applications with transient overvoltage conditions. The 100A continuous drain current at Tc matches the main part. The on-resistance of 3.7mOhm is slightly higher than the main part. Maximum operating temperature is 150°C. This substitute is appropriate for designs requiring higher voltage headroom. The 8-PQFN (5x6) package requires PCB layout verification.
FDMS86540 (onsemi PowerTrench®): This device is rated for 60V Vdss with 20A continuous drain current at Ta and 50A at Tc, representing reduced current capability compared to the main part. The on-resistance of 3.4mOhm is acceptable. Maximum operating temperature is 150°C. This substitute is suitable only for applications with lower current requirements and is not recommended as a direct replacement for the DMTH6004SPS-13 in high-current designs. The 8-PQFN (5x6) package requires PCB layout verification.
All substitute parts maintain RoHS3 compliance, MSL 1 rating, and REACH Unaffected status, ensuring regulatory compatibility with the original part.
Frequently Asked Questions (FAQ)
Q: Can DMTH6004SPSQ-13 be used as a direct replacement for DMTH6004SPS-13?
A: Yes. The DMTH6004SPSQ-13 is a parametric equivalent with identical electrical specifications, on-resistance, gate charge, and package configuration. Both parts are manufactured by Diodes Incorporated and maintain the same operating temperature range (-55°C to 175°C). The primary difference is product designation and inventory availability.
Q: What are the key differences between the Diodes Incorporated parts and onsemi PowerTrench® alternatives?
A: The onsemi substitutes use different package designations (8-PQFN 5x6 vs. 8-PowerTDFN) and have reduced maximum operating temperatures (150°C vs. 175°C). The FDMS030N06B and FDMS037N08B maintain comparable or superior on-resistance values. FDMS86540 has reduced current ratings and is not suitable for high-current applications. All onsemi parts maintain RoHS3 compliance and MSL 1 rating.
Q: Is the 8-PQFN (5x6) package compatible with PCB layouts designed for 8-PowerTDFN?
A: Both packages are classified as 8-pin surface mount devices with similar footprints, but pin spacing and thermal pad dimensions may differ. PCB layout verification is required before substituting onsemi parts for the original Diodes Incorporated device. Consult package datasheets for precise dimensional specifications.
Q: Which substitute part is recommended for applications requiring maximum current handling?
A: FDMS030N06B and FDMS037N08B both support 100A continuous drain current at case temperature (Tc), matching the main part. FDMS030N06B is preferred for 60V applications, while FDMS037N08B is suitable for designs requiring 75V voltage rating. FDMS86540 is limited to 50A at Tc and is not recommended for high-current designs.
Q: Can FDMS86540 be used in place of DMTH6004SPS-13?
A: FDMS86540 is not recommended as a direct replacement due to reduced continuous drain current ratings (20A at Ta, 50A at Tc vs. 25A at Ta, 100A at Tc). This substitute is suitable only for applications with lower current requirements. Verify application current specifications before selecting this part.
Q: What is the impact of the reduced maximum operating temperature (150°C vs. 175°C) in onsemi substitutes?
A: The onsemi PowerTrench® devices are rated to 150°C maximum junction temperature, compared to 175°C for the DMTH6004SPS-13. Applications operating near the upper temperature limit of the original part may require thermal design review when substituting onsemi alternatives. Verify application thermal requirements before selection.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All substitute parts listed (DMTH6004SPSQ-13, FDMS030N06B, FDMS037N08B, and FDMS86540) are RoHS3 compliant with MSL 1 rating and REACH Unaffected status, ensuring regulatory compatibility with the original DMTH6004SPS-13.
Q: What is the significance of on-resistance (Rds On) differences between parts?
A: On-resistance directly affects power dissipation and thermal performance. Lower Rds On values reduce conduction losses. FDMS030N06B (3mOhm) offers superior performance, while FDMS037N08B (3.7mOhm) and FDMS86540 (3.4mOhm) have slightly higher values. The main part and DMTH6004SPSQ-13 both specify 3.1mOhm. Select based on application power budget and thermal constraints.
Q: How do gate charge (Qg) differences affect circuit design?
A: Gate charge influences gate drive circuit design and switching speed. The main part specifies 95.4nC at 10V. FDMS030N06B has lower gate charge (75nC), enabling faster switching, while FDMS037N08B (100nC) and FDMS86540 (90nC) are comparable. Higher gate charge requires stronger gate drive capability. Verify gate driver specifications before substitution.
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