DMTH6004SCT N-Channel 60V 100A MOSFET Equivalent & Substitute Parts

Part Overview

The DMTH6004SCT is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 60V drain-to-source voltage and 100A continuous drain current in a Through Hole TO-220-3 package. This device is classified as Active product status and is RoHS3 compliant. Substitute parts are identified when original inventory is unavailable, when application requirements permit higher current or voltage ratings, or when alternative manufacturers' components meet or exceed the electrical and mechanical specifications of the primary device.

Substiute Parts

DMTH6004SCT
Diodes IncorporatedIn Stock: 1054DMTH6004SCT Datasheet
DMTH6004SCT
Current Part
FDP030N06
onsemiIn Stock: 6170FDP030N06 Datasheet
FDP030N06
MFR Recommended
FDP032N08
onsemiIn Stock: 1858FDP032N08 Datasheet
FDP032N08
MFR Recommended
IRF1405PBF
Infineon TechnologiesIn Stock: 55399IRF1405PBF Datasheet
IRF1405PBF
MFR Recommended
IRF2805PBF
International RectifierIn Stock: 18911IRF2805PBF Datasheet
IRF2805PBF
MFR Recommended
IRFB3306PBF
Infineon TechnologiesIn Stock: 25122IRFB3306PBF Datasheet
IRFB3306PBF
MFR Recommended
IXTP260N055T2
IXYSIn Stock: 32874IXTP260N055T2 Datasheet
IXTP260N055T2
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 100 A (Tc)
Rds On (Max) @ Id, Vgs 3.65 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95.4 nC @ 10V
Power Dissipation (Max) 136 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package / Case TO-220-3
Mounting Type Through Hole
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the DMTH6004SCT are selected based on the following criteria:

Primary Substitution Criteria:

  • FET Type: N-Channel (required match)
  • Package / Case: TO-220-3 or TO-220AB (mechanically compatible)
  • Mounting Type: Through Hole (required match)
  • Operating Temperature Range: -55°C to 175°C (required match)
  • RoHS3 Compliance: Required for regulatory equivalence

Electrical Compatibility Parameters:

  • Drain to Source Voltage (Vdss): Equal to or greater than 60V
  • Current - Continuous Drain (Id): Equal to or greater than 100A
  • Gate Drive Voltage: 10V (standard across all candidates)
  • Vgs(th) and Vgs(Max): Within ±20V specification range

Substitute parts meeting these criteria are grouped into two categories: direct equivalents (matching or exceeding all primary specifications) and functional alternatives (meeting minimum electrical requirements with enhanced performance characteristics).

Parameter Comparison

Parameter DMTH6004SCT FDP030N06 FDP032N08 IRF1405PBF IRF2805PBF IRFB3306PBF IXTP260N055T2
Manufacturer Diodes Inc. onsemi onsemi Infineon Int'l Rectifier Infineon IXYS
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Vdss (V) 60 60 75 55 55 60 55
Id @ 25°C (A) 100 120 120 169 75 120 260
Rds On (Max) @ 10V (mOhm) 3.65 @ 100A 3.2 @ 75A 3.2 @ 75A 5.3 @ 101A 4.7 @ 104A 4.2 @ 75A 3.3 @ 50A
Vgs(th) (Max) @ 250µA (V) 4 4.5 4.5 4 4 4 4
Gate Charge (Qg) @ 10V (nC) 95.4 151 220 260 230 120 140
Power Dissipation (Max) (W) 136 231 375 330 330 230 480
Operating Temperature (°C) -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175
Package TO-220-3 TO-220-3 TO-220-3 TO-220AB TO-220AB TO-220AB TO-220-3
RoHS3 Compliant Yes Yes Yes Yes Yes Yes Yes

Engineering Selection Recommendations

Direct Equivalents (Recommended Primary Substitutes):

FDP030N06 (onsemi): Matches 60V Vdss specification with 120A continuous drain current, exceeding the 100A requirement. Rds On of 3.2 mOhm at 75A provides improved on-state performance. TO-220-3 package maintains mechanical compatibility. RoHS3 compliant. 6111 units in stock.

IRFB3306PBF (Infineon): Matches 60V Vdss and provides 120A continuous drain current. Rds On of 4.2 mOhm at 75A and gate charge of 120 nC closely align with DMTH6004SCT characteristics. TO-220AB package is mechanically compatible. RoHS3 compliant. 25100 units in stock.

Enhanced Performance Alternatives:

IXTP260N055T2 (IXYS): Rated for 55V Vdss with 260A continuous drain current, providing significant current margin. Rds On of 3.3 mOhm at 50A and 480W power dissipation enable higher-power applications. TO-220-3 package. RoHS3 compliant. 32800 units in stock.

FDP032N08 (onsemi): Rated for 75V Vdss with 120A continuous drain current, suitable for applications requiring higher voltage headroom. 375W power dissipation. TO-220-3 package. RoHS3 compliant. 1794 units in stock.

Limited Substitutes (Lower Current Rating):

IRF2805PBF (International Rectifier): Rated for 55V Vdss but provides only 75A continuous drain current, below the 100A requirement. Suitable only for applications with reduced current demands. TO-220AB package. RoHS3 compliant. 18848 units in stock.

Marginal Substitute (Lower Voltage Rating):

IRF1405PBF (Infineon): Rated for 55V Vdss with 169A continuous drain current. Vdss is 5V below specification, limiting margin for voltage transients. 330W power dissipation. TO-220AB package. RoHS3 compliant. 55300 units in stock.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part with a lower Vdss rating than the DMTH6004SCT?

A: Substitution with lower Vdss is not recommended. The DMTH6004SCT is rated for 60V. Parts rated at 55V (IRF1405PBF, IRF2805PBF, IXTP260N055T2) reduce voltage margin and increase risk of device failure during transient overvoltage conditions. Use only if application maximum voltage is confirmed below 55V.

Q: What is the difference between TO-220-3 and TO-220AB packages?

A: Both are Through Hole packages with identical pin configurations and mechanical footprints. TO-220-3 and TO-220AB are mechanically interchangeable. All substitute parts listed are compatible with DMTH6004SCT PCB layouts.

Q: Can I substitute a part with higher gate charge (Qg)?

A: Yes. Higher gate charge increases driver circuit power dissipation but does not affect device functionality. Parts with Qg values of 120 nC to 260 nC are functionally compatible with standard gate drivers designed for 10V gate drive.

Q: Which substitute provides the best on-state performance?

A: IXTP260N055T2 offers the lowest Rds On at 3.3 mOhm (measured at 50A, 10V), followed by FDP030N06 and FDP032N08 at 3.2 mOhm (measured at 75A, 10V). Lower Rds On reduces conduction losses in high-current applications.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed are RoHS3 compliant and REACH unaffected, matching the regulatory status of the DMTH6004SCT.

Q: Can I use IRF2805PBF as a direct replacement?

A: IRF2805PBF is not a direct replacement. It provides only 75A continuous drain current, which is 25A below the DMTH6004SCT specification. Use only if application current requirement is confirmed at 75A or below.

Q: What is the advantage of FDP032N08 over FDP030N06?

A: FDP032N08 is rated for 75V Vdss compared to FDP030N06 at 60V, providing 15V additional voltage margin. Both provide 120A continuous drain current. Select FDP032N08 for applications with higher voltage transient exposure.

Q: Do all substitute parts operate across the same temperature range?

A: Yes. All substitute parts operate from -55°C to 175°C (TJ), matching the DMTH6004SCT operating temperature specification.

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