DMTH43M8LPS-13 Equivalent & Substitute Parts

Part Overview

The DMTH43M8LPS-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 40V drain-to-source voltage with 22A continuous drain current at 25°C (Ta) and 100A at case temperature (Tc). This device is packaged in a PowerDI5060-8 surface mount configuration and is qualified to AEC-Q101 automotive standards. The part is currently active in production with 3800 units in stock.

Equivalent and substitute parts are identified when design requirements permit alternative components that maintain functional compatibility within specified electrical and mechanical parameters. Substitutes are selected based on matching or exceeding critical performance characteristics including voltage rating, current capacity, on-resistance, gate charge, and thermal performance, while maintaining surface mount compatibility and automotive-grade qualification.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	40	V
Continuous Drain Current @ 25°C (Ta)	22	A
Continuous Drain Current @ Case (Tc)	100	A
On-Resistance (Rds On) @ 20A, 10V	3.3	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.5	V
Gate Charge (Qg) @ 10V	38.5	nC
Input Capacitance (Ciss) @ 30V	2693	pF
Power Dissipation (Ta)	2.7	W
Power Dissipation (Tc)	83	W
Operating Temperature Range	-55 to 175	°C
Package Type	PowerDI5060-8	Surface Mount
Qualification Standard	AEC-Q101	Automotive
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the DMTH43M8LPS-13 are qualified based on the following electrical and mechanical compatibility criteria:

Voltage Rating: All substitutes maintain the 40V Vdss specification, ensuring compatibility in circuits designed for this voltage class.

Current Capacity: Substitutes are selected with continuous drain current ratings at or above the 22A (Ta) specification. Higher current ratings provide design margin without compromising functionality.

On-Resistance: Rds On values are maintained within comparable ranges to ensure similar power dissipation characteristics and thermal performance in the application circuit.

Gate Charge and Input Capacitance: These parameters are evaluated to confirm compatibility with existing gate drive circuitry and switching frequency requirements.

Operating Temperature Range: All substitutes support the automotive temperature range of -55°C to 175°C (TJ), with the exception noted where maximum junction temperature differs.

Surface Mount Packaging: All substitutes are surface mount devices suitable for automated assembly processes.

Automotive Qualification: All substitutes maintain AEC-Q101 qualification and ROHS3 compliance, meeting automotive industry standards.

Moisture Sensitivity: All substitutes carry MSL 1 (Unlimited) rating, indicating no moisture sensitivity constraints.

Parameter Comparison

Parameter	DMTH43M8LPS-13 (Diodes)	CSD18511Q5AT (Texas Instruments)	RS1G260MNTB (Rohm)	Unit
Manufacturer	Diodes Incorporated	Texas Instruments	Rohm Semiconductor	—
Drain-to-Source Voltage (Vdss)	40	40	40	V
Continuous Drain Current @ 25°C (Ta)	22	—	26	A
Continuous Drain Current @ Case (Tc)	100	159	80	A
On-Resistance (Rds On) Max	3.3 @ 20A, 10V	3.5 @ 24A, 4.5V	3.3 @ 26A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.5	2.45	2.5	V
Gate Charge (Qg) @ 10V	38.5	63	44	nC
Input Capacitance (Ciss) Max	2693 @ 30V	5850 @ 10V	2988 @ 20V	pF
Power Dissipation (Ta)	2.7	—	3	W
Power Dissipation (Tc)	83	104	35	W
Operating Temperature Range (TJ)	-55 to 175	-55 to 150	-55 to 150	°C
Package Type	PowerDI5060-8	8-VSONP (5x6)	8-HSOP	Surface Mount
Product Status	Active	Active	Active	—
AEC-Q101 Qualified	Yes	Not specified	Not specified	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	—
Inventory Status	3800 Pcs In Stock	1699 Pcs In Stock	3674 Pcs In Stock	—

Engineering Selection Recommendations

DMTH43M8LPS-13 (Primary Part): This part is the specified component with full AEC-Q101 automotive qualification and the widest operating temperature range (-55°C to 175°C). It is recommended for applications requiring maximum automotive compliance and thermal performance at elevated junction temperatures. Current inventory of 3800 units supports production requirements.

CSD18511Q5AT (Texas Instruments NexFET™ Series): This substitute provides the highest continuous drain current rating at case temperature (159A Tc), offering significant thermal performance margin. The part is active in production with 1699 units in stock. The maximum junction temperature is limited to 150°C, which is acceptable for most automotive applications operating below 150°C. Gate charge is higher at 63 nC, requiring verification of gate drive circuit compatibility. Input capacitance is significantly higher at 5850 pF, which may affect switching frequency performance. This substitute is suitable for applications prioritizing maximum current capacity and thermal dissipation.

RS1G260MNTB (Rohm Semiconductor): This substitute provides a continuous drain current rating of 26A (Ta) and 80A (Tc), closely matching the original part's performance envelope. On-resistance is identical at 3.3 mOhm, and gate charge at 44 nC is moderate. The maximum junction temperature is 150°C. Input capacitance at 2988 pF is comparable to the original part. This substitute offers the closest electrical performance match and is suitable for direct replacement in applications where the original part specifications are adequate. Current inventory of 3674 units supports production continuity.

All substitute parts maintain ROHS3 compliance, MSL 1 rating, and surface mount compatibility. Package differences (PowerDI5060-8 vs. 8-VSONP vs. 8-HSOP) require PCB layout verification and thermal management assessment for the specific application.

Frequently Asked Questions (FAQ)

Q: Can the CSD18511Q5AT be used as a direct replacement for the DMTH43M8LPS-13?

A: The CSD18511Q5AT is electrically compatible with the DMTH43M8LPS-13 in terms of voltage rating and current capacity. However, three factors require evaluation: (1) The maximum junction temperature is 150°C versus 175°C for the original part, which may limit thermal performance in high-temperature automotive applications; (2) Gate charge is 63 nC versus 38.5 nC, requiring confirmation that the gate drive circuit can accommodate the higher charge; (3) Input capacitance is 5850 pF versus 2693 pF, which may affect switching frequency and efficiency. PCB layout changes are necessary due to different package types (8-VSONP vs. PowerDI5060-8).

Q: Can the RS1G260MNTB be used as a direct replacement for the DMTH43M8LPS-13?

A: The RS1G260MNTB is highly compatible with the DMTH43M8LPS-13. Both parts share identical on-resistance (3.3 mOhm), similar gate threshold voltage (2.5V), comparable gate charge (44 nC vs. 38.5 nC), and similar input capacitance (2988 pF vs. 2693 pF). The continuous drain current ratings are closely matched (26A Ta vs. 22A Ta). The maximum junction temperature is 150°C versus 175°C, which is acceptable for most automotive applications. PCB layout changes are necessary due to different package types (8-HSOP vs. PowerDI5060-8).

Q: What are the package differences between these three parts?

A: The DMTH43M8LPS-13 uses PowerDI5060-8 packaging. The CSD18511Q5AT uses 8-VSONP (5x6) packaging. The RS1G260MNTB uses 8-HSOP packaging. All three are surface mount packages with 8 leads, but physical dimensions and thermal characteristics differ. PCB footprint redesign is required when switching between these packages. Thermal performance may vary due to different package thermal resistance characteristics.

Q: Are all three parts qualified to AEC-Q101 automotive standards?

A: The DMTH43M8LPS-13 is explicitly qualified to AEC-Q101. The CSD18511Q5AT and RS1G260MNTB do not have AEC-Q101 qualification specified in the provided data. For applications requiring mandatory AEC-Q101 compliance, the DMTH43M8LPS-13 is the specified choice. For applications where AEC-Q101 is not a requirement, the substitute parts are acceptable alternatives.

Q: What is the impact of higher gate charge on the CSD18511Q5AT?

A: The CSD18511Q5AT has gate charge of 63 nC at 10V, compared to 38.5 nC for the DMTH43M8LPS-13. Higher gate charge requires more energy from the gate drive circuit to switch the device. This may increase switching losses and require a more robust gate driver with higher current capability. The gate drive circuit must be evaluated to confirm it can supply the additional charge without exceeding voltage or current limits.

Q: What is the significance of input capacitance differences?

A: Input capacitance (Ciss) affects the gate drive circuit's charging time and switching frequency performance. The DMTH43M8LPS-13 has 2693 pF, the RS1G260MNTB has 2988 pF (similar), and the CSD18511Q5AT has 5850 pF (significantly higher). Higher input capacitance increases the RC time constant in the gate drive circuit, potentially reducing maximum switching frequency and increasing switching losses. Applications operating at high switching frequencies should prioritize parts with lower input capacitance.

Q: How do the operating temperature ranges affect part selection?

A: The DMTH43M8LPS-13 operates from -55°C to 175°C (TJ), while both substitute parts operate from -55°C to 150°C (TJ). For automotive applications where junction temperature may exceed 150°C under worst-case conditions, the DMTH43M8LPS-13 provides additional thermal margin. For applications where junction temperature remains below 150°C, the substitute parts are acceptable.

Q: What inventory considerations apply to these parts?

A: The DMTH43M8LPS-13 has 3800 units in stock, the RS1G260MNTB has 3674 units in stock, and the CSD18511Q5AT has 1699 units in stock. For high-volume production, the DMTH43M8LPS-13 and RS1G260MNTB offer better inventory availability. The CSD18511Q5AT has lower inventory, which may impact lead times for large orders.

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