DMTH41M8SPS-13 Equivalent & Substitute Parts

Part Overview

The DMTH41M8SPS-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 40V drain-to-source voltage and 100A continuous drain current. This device is housed in a PowerDI5060-8 (Type K) surface mount package and is classified as Active product status. The part is designed for high-current switching applications requiring low on-resistance performance in compact form factors.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are maintained across the specified parameter set. Alternative sources and variants may be required due to inventory availability, supply chain considerations, or specific application certifications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	40	V
Current - Continuous Drain (Id) @ 25°C	100	A (Tc)
Rds On (Max) @ Id, Vgs	1.8	mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs	79.5	nC @ 10V
Vgs(th) (Max) @ Id	4	V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds	6968	pF @ 20V
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	8-PowerTDFN	Surface Mount
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution eligibility for the DMTH41M8SPS-13 is determined by the following critical parameters:

Electrical Equivalence Criteria:

Drain to Source Voltage (Vdss): 40V minimum
Continuous Drain Current (Id): 100A minimum at 25°C
On-Resistance (Rds On): Performance within specified tolerance at rated conditions
Gate Charge (Qg): Switching characteristics compatibility
Threshold Voltage (Vgs(th)): Gate drive compatibility
Input Capacitance (Ciss): Switching speed and drive circuit considerations

Mechanical Compatibility Criteria:

Surface Mount package classification
Pin configuration and footprint compatibility
Thermal performance characteristics

Compliance Criteria:

RoHS3 compliance status
Moisture Sensitivity Level (MSL) rating
Operating temperature range coverage

Substitute parts are grouped into two categories: parametric equivalents from the same manufacturer with identical electrical specifications, and manufacturer-recommended alternatives from other suppliers that meet or exceed the electrical performance requirements while maintaining package compatibility.

Parameter Comparison

Parameter	DMTH41M8SPS-13	DMTH41M8SPSQ-13	IPC100N04S51R7ATMA1
Manufacturer	Diodes Incorporated	Diodes Incorporated	Infineon Technologies
Vdss (V)	40	40	40
Id @ 25°C (A)	100	100	100
Rds On (Max) (mOhm)	1.8 @ 30A, 10V	1.8 @ 30A, 10V	1.7 @ 50A, 10V
Vgs(th) (Max) (V)	4 @ 250µA	4 @ 250µA	3.4 @ 60µA
Gate Charge (Qg) (nC)	79.5 @ 10V	79.5 @ 10V	83 @ 10V
Ciss (Max) (pF)	6968 @ 20V	6968 @ 20V	4810 @ 25V
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175
Package	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN
Product Status	Active	Active	Not For New Designs
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

DMTH41M8SPSQ-13 (Diodes Incorporated):

This part is a parametric equivalent to the DMTH41M8SPS-13 with identical electrical specifications and package configuration. The DMTH41M8SPSQ-13 carries Automotive grade qualification and AEC-Q101 certification, making it suitable for automotive applications requiring enhanced reliability standards. Both parts maintain Active product status and ROHS3 compliance. Selection between these two Diodes Incorporated variants depends on application requirements for automotive qualification and higher inventory availability (3001 pcs vs. 701 pcs).

IPC100N04S51R7ATMA1 (Infineon Technologies):

This part meets the electrical performance requirements with equivalent voltage and current ratings. The IPC100N04S51R7ATMA1 demonstrates superior on-resistance performance (1.7 mOhm @ 50A, 10V) and lower input capacitance (4810 pF @ 25V), resulting in improved switching efficiency and reduced gate drive requirements. However, this part carries a "Not For New Designs" product status designation, indicating it is in mature or end-of-life phase. The part is suitable for replacement or maintenance applications where existing designs are already qualified. All three parts maintain identical operating temperature ranges, RoHS3 compliance, and MSL ratings.

Frequently Asked Questions (FAQ)

Q: Can DMTH41M8SPSQ-13 be used as a direct replacement for DMTH41M8SPS-13?

A: Yes. Both parts are manufactured by Diodes Incorporated with identical electrical specifications, on-resistance characteristics, gate charge, and threshold voltage parameters. The primary difference is the automotive-grade qualification (AEC-Q101) of the DMTH41M8SPSQ-13. Both use the same 8-PowerTDFN package and maintain equivalent thermal and electrical performance.

Q: What are the key differences between the Diodes and Infineon options?

A: The Infineon IPC100N04S51R7ATMA1 offers lower on-resistance (1.7 mOhm vs. 1.8 mOhm) and reduced input capacitance (4810 pF vs. 6968 pF), providing improved switching efficiency. However, it carries "Not For New Designs" status. The Diodes parts maintain Active status and are recommended for new designs. All three parts meet the 40V/100A electrical requirements and use compatible 8-PowerTDFN packages.

Q: Are there package compatibility concerns when substituting these parts?

A: All three parts use the 8-PowerTDFN surface mount package classification. PCB footprints and thermal pad configurations are compatible across these devices. No layout modifications are required for mechanical substitution.

Q: What compliance certifications apply to each part?

A: All three parts are ROHS3 compliant with MSL rating of 1 (Unlimited moisture sensitivity). The DMTH41M8SPSQ-13 carries additional AEC-Q101 automotive qualification. The IPC100N04S51R7ATMA1 maintains ROHS3 compliance but is designated "Not For New Designs."

Q: How do gate charge and threshold voltage differences affect circuit design?

A: Gate charge (Qg) and threshold voltage (Vgs(th)) determine gate drive circuit requirements. The DMTH41M8SPS-13 and DMTH41M8SPSQ-13 have identical specifications (79.5 nC @ 10V and 4V @ 250µA respectively), requiring no gate drive circuit modifications. The IPC100N04S51R7ATMA1 has slightly higher gate charge (83 nC) and lower threshold voltage (3.4V @ 60µA), which may require gate drive circuit evaluation but remains compatible with standard 10V drive voltage specifications.

Q: What is the significance of "Not For New Designs" status for the Infineon part?

A: "Not For New Designs" indicates the IPC100N04S51R7ATMA1 is in mature or end-of-life phase. This part is suitable for replacement, repair, or maintenance of existing equipment but should not be selected for new product development. The Diodes Incorporated parts (DMTH41M8SPS-13 and DMTH41M8SPSQ-13) maintain Active status and are appropriate for new designs.

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