DMTH4005SPSQ-13 Equivalent & Substitute Parts

Part Overview

The DMTH4005SPSQ-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 40V drain-to-source voltage with 20.9A continuous drain current at 25°C (Ta) and 100A at case temperature (Tc). This device is housed in a PowerDI5060-8 surface mount package and is qualified to AEC-Q101 automotive standards. The part is active in production with 3191 pieces currently in stock.

Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing due to inventory constraints, supply chain considerations, or when functionally compatible alternatives from different manufacturers meet the same electrical and mechanical specifications.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	40	V
Continuous Drain Current @ 25°C (Ta)	20.9	A
Continuous Drain Current @ Case (Tc)	100	A
Rds On (Max) @ 50A, 10V	3.7	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	49.1	nC
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ 20V	3062	pF
Power Dissipation (Ta)	2.6	W
Power Dissipation (Tc)	150	W
Operating Temperature Range	-55 to 175	°C
Package Type	8-PowerTDFN	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—
AEC-Q101 Qualification	Yes	—

Substitute Part Grouping Explanation

Substitute parts for the DMTH4005SPSQ-13 are identified based on electrical and mechanical parameter compatibility. The substitution logic is structured into two categories:

Parametric Equivalent (Same Manufacturer): The DMTH4005SPS-13 is a parametric equivalent manufactured by Diodes Incorporated. This part shares identical electrical specifications including Vdss (40V), continuous drain current (20.9A at Ta, 100A at Tc), Rds On (3.7mOhm @ 50A, 10V), gate threshold voltage (4V @ 250µA), and gate charge (49.1 nC @ 10V). Both parts use the same PowerDI5060-8 package and operate across the same temperature range (-55°C to 175°C). The primary difference is packaging format: DMTH4005SPSQ-13 is supplied in Tape & Reel (TR), while DMTH4005SPS-13 is also supplied in Tape & Reel (TR). Both maintain AEC-Q101 automotive qualification and ROHS3 compliance.

Manufacturer Recommended Equivalent (Cross-Manufacturer): The BSC035N04LSGATMA1 from Infineon Technologies is a manufacturer-recommended substitute. This part meets the core electrical requirements with Vdss of 40V and continuous drain current of 21A (Ta) and 100A (Tc), which are within acceptable tolerance of the original specification. The Rds On is 3.5mOhm @ 50A, 10V, representing a marginal improvement. Both parts are surface mount devices in 8-PowerTDFN packages and maintain ROHS3 compliance and MSL 1 rating. The BSC035N04LSGATMA1 operates across -55°C to 150°C, which covers the primary operating range of the original part.

Key parameters determining substitution eligibility:

Drain-to-Source Voltage (Vdss): 40V
Continuous Drain Current: ≥20.9A @ Ta, 100A @ Tc
On-State Resistance (Rds On): ≤3.7mOhm @ 50A, 10V
Gate Threshold Voltage: Compatible with 4V reference
Package Type: 8-PowerTDFN surface mount
Compliance: ROHS3, MSL 1, AEC-Q101 (automotive applications)

Parameter Comparison

Parameter	DMTH4005SPSQ-13	DMTH4005SPS-13	BSC035N04LSGATMA1	Unit
Manufacturer	Diodes Incorporated	Diodes Incorporated	Infineon Technologies	—
FET Type	N-Channel	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	40	40	40	V
Continuous Drain Current @ 25°C (Ta)	20.9	20.9	21	A
Continuous Drain Current @ Case (Tc)	100	100	100	A
Rds On (Max) @ 50A, 10V	3.7	3.7	3.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ Reference Current	4 @ 250µA	4 @ 250µA	2 @ 36µA	V
Gate Charge (Qg) @ 10V	49.1	49.1	64	nC
Maximum Gate Voltage (Vgs)	±20	±20	±20	V
Input Capacitance (Ciss) @ 20V	3062	3062	5100	pF
Power Dissipation (Ta)	2.6	2.6	2.5	W
Power Dissipation (Tc)	150	150	69	W
Operating Temperature Range	-55 to 175	-55 to 175	-55 to 150	°C
Package Type	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN	—
Mounting Type	Surface Mount	Surface Mount	Surface Mount	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	—
AEC-Q101 Qualification	Yes	Yes	Not specified	—
Product Status	Active	Active	Active	—
Inventory (Pcs)	3191	3481	2374	—

Engineering Selection Recommendations

DMTH4005SPS-13 (Diodes Incorporated): This part is the primary parametric equivalent and is recommended as the first substitute option. It maintains identical electrical specifications to the DMTH4005SPSQ-13, including Vdss, continuous drain current, Rds On, gate threshold voltage, and gate charge. Both parts carry AEC-Q101 automotive qualification and ROHS3 compliance. The DMTH4005SPS-13 has higher inventory availability (3481 pieces versus 3191 pieces), making it suitable for applications requiring the same performance characteristics and automotive-grade reliability. Selection of this part requires no circuit redesign or thermal management adjustments.

BSC035N04LSGATMA1 (Infineon Technologies): This part is suitable as a secondary substitute when the Diodes Incorporated alternatives are unavailable. The BSC035N04LSGATMA1 meets the core voltage and current specifications with Vdss of 40V and continuous drain current of 21A (Ta) and 100A (Tc). The on-state resistance of 3.5mOhm is superior to the original specification of 3.7mOhm, resulting in lower conduction losses. However, the operating temperature range extends to 150°C (versus 175°C for the original part), which may limit use in extreme high-temperature applications. The gate charge is higher at 64 nC compared to 49.1 nC, which may affect switching speed in high-frequency circuits. The power dissipation at case temperature is rated at 69W versus 150W for the original part, indicating different thermal characteristics. This part is ROHS3 compliant and maintains MSL 1 rating. AEC-Q101 qualification status is not specified for this part.

Selection between these substitutes depends on application requirements: use DMTH4005SPS-13 for direct replacement with identical specifications and automotive qualification; use BSC035N04LSGATMA1 when supply constraints require cross-manufacturer sourcing and the application operates within -55°C to 150°C temperature range.

Frequently Asked Questions (FAQ)

Q: Can DMTH4005SPS-13 be used as a direct replacement for DMTH4005SPSQ-13?

A: Yes. The DMTH4005SPS-13 is a parametric equivalent with identical electrical specifications. Both parts have the same Vdss (40V), continuous drain current (20.9A at Ta, 100A at Tc), Rds On (3.7mOhm @ 50A, 10V), gate threshold voltage (4V @ 250µA), and gate charge (49.1 nC @ 10V). Both are housed in 8-PowerTDFN packages, maintain AEC-Q101 automotive qualification, and are ROHS3 compliant. No circuit modifications are required.

Q: What are the key differences between DMTH4005SPSQ-13 and BSC035N04LSGATMA1?

A: The primary differences are: (1) Manufacturer: Diodes Incorporated versus Infineon Technologies; (2) Gate threshold voltage: 4V @ 250µA versus 2V @ 36µA; (3) Gate charge: 49.1 nC versus 64 nC; (4) Input capacitance: 3062 pF versus 5100 pF; (5) Operating temperature range: -55°C to 175°C versus -55°C to 150°C; (6) Power dissipation at case temperature: 150W versus 69W; (7) AEC-Q101 qualification: specified for DMTH4005SPSQ-13 but not specified for BSC035N04LSGATMA1. Electrical performance is comparable for Vdss, continuous drain current, and Rds On.

Q: Is the BSC035N04LSGATMA1 suitable for automotive applications?

A: The BSC035N04LSGATMA1 is ROHS3 compliant and MSL 1 rated, meeting environmental and moisture sensitivity requirements. However, AEC-Q101 automotive qualification is not specified in the provided data. For applications requiring AEC-Q101 certification, the DMTH4005SPSQ-13 or DMTH4005SPS-13 are the appropriate choices.

Q: How do the on-state resistance values compare?

A: The DMTH4005SPSQ-13 and DMTH4005SPS-13 both have Rds On of 3.7mOhm @ 50A, 10V. The BSC035N04LSGATMA1 has a lower Rds On of 3.5mOhm @ 50A, 10V, representing approximately 5% improvement in on-state resistance, which reduces conduction losses in switching applications.

Q: Are all three parts available in the same package?

A: Yes. All three parts use the 8-PowerTDFN surface mount package. Pin-to-pin compatibility is maintained across all three devices, allowing for direct PCB layout reuse.

Q: What is the significance of the gate charge difference between DMTH4005SPSQ-13 and BSC035N04LSGATMA1?

A: The DMTH4005SPSQ-13 has gate charge of 49.1 nC @ 10V, while the BSC035N04LSGATMA1 has 64 nC @ 10V. Higher gate charge requires more energy to switch the device and may result in slower switching transitions. In high-frequency switching applications, this difference may affect circuit performance and power dissipation characteristics.

Q: What is the impact of the different operating temperature ranges?

A: The DMTH4005SPSQ-13 operates from -55°C to 175°C (TJ), while the BSC035N04LSGATMA1 operates from -55°C to 150°C (TJ). The original part supports a 25°C higher maximum junction temperature. For applications operating near or above 150°C, the DMTH4005SPSQ-13 or DMTH4005SPS-13 must be used.

Q: Can these parts be used interchangeably in existing designs?

A: DMTH4005SPS-13 can be used interchangeably with DMTH4005SPSQ-13 without design changes. The BSC035N04LSGATMA1 can be used as a substitute with consideration for differences in gate charge, input capacitance, and maximum operating temperature. Circuit simulation or testing is appropriate when switching frequency, thermal management, or temperature extremes are critical design factors.

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