DMTH4004SPSQ-13 Equivalent & Substitute Parts

Part Overview

The DMTH4004SPSQ-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 40V drain-to-source voltage with 31A continuous drain current at 25°C (Ta) and 100A at case temperature (Tc). This device is housed in a PowerDI5060-8 surface mount package and is classified as Active product status. The part is specified for applications requiring low on-resistance switching performance in power management and conversion circuits.

Equivalent and substitute parts are identified based on matching or exceeding the electrical performance parameters, maintaining compatible package footprints, and ensuring compliance with RoHS3 and REACH requirements. Substitutes are selected where drain-to-source voltage, gate-source voltage ratings, and thermal performance characteristics align with or exceed the original specification.

Substiute Parts

DMTH4004SPSQ-13
Diodes IncorporatedIn Stock: 3313DMTH4004SPSQ-13 Datasheet
DMTH4004SPSQ-13
Current Part
DMTH4004SPS-13
Diodes IncorporatedIn Stock: 20428DMTH4004SPS-13 Datasheet
DMTH4004SPS-13
Parametric Equivalent
BSC027N04LSGATMA1
Infineon TechnologiesIn Stock: 4719BSC027N04LSGATMA1 Datasheet
BSC027N04LSGATMA1
MFR Recommended
BSC030N04NSGATMA1
Infineon TechnologiesIn Stock: 46010BSC030N04NSGATMA1 Datasheet
BSC030N04NSGATMA1
MFR Recommended
IPC90N04S5L3R3ATMA1
Infineon TechnologiesIn Stock: 15624IPC90N04S5L3R3ATMA1 Datasheet
IPC90N04S5L3R3ATMA1
MFR Recommended
RS1G260MNTB
Rohm SemiconductorIn Stock: 3770RS1G260MNTB Datasheet
RS1G260MNTB
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 40 V
Continuous Drain Current @ 25°C (Ta) 31 A
Continuous Drain Current @ Case Temp (Tc) 100 A
On-Resistance (Rds On) @ 90A, 10V 2.7 mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 68.6 nC
Input Capacitance (Ciss) @ 25V 4305 pF
Power Dissipation (Ta) 3.6 W
Power Dissipation (Tc) 167 W
Operating Temperature Range -55 to 175 °C
Package Type 8-PowerTDFN
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts are grouped based on the following electrical and mechanical criteria derived from the main part specification:

Primary Matching Criteria:

  • Drain-to-Source Voltage (Vdss): 40V (exact match required)
  • FET Type: N-Channel MOSFET
  • Technology: Metal Oxide Semiconductor
  • Package: 8-PowerTDFN surface mount
  • Mounting: Surface mount configuration
  • Compliance: RoHS3 and REACH requirements

Secondary Performance Criteria:

  • Continuous Drain Current: Equal to or exceeding 31A @ 25°C (Ta)
  • On-Resistance (Rds On): Equal to or lower than 2.7mOhm @ specified conditions
  • Gate-Source Voltage Rating: ±20V or compatible
  • Operating Temperature: Minimum -55°C to 175°C range
  • Moisture Sensitivity Level: MSL 1 (Unlimited)

Substitutes are classified as parametric equivalents when all primary criteria are met and secondary performance parameters are maintained or improved. Parts with reduced continuous drain current at Ta or higher on-resistance are listed but noted for application-specific evaluation.

Parameter Comparison

Parameter DMTH4004SPSQ-13 DMTH4004SPS-13 BSC027N04LSGATMA1 BSC030N04NSGATMA1 IPC90N04S5L3R3ATMA1 RS1G260MNTB
Manufacturer Diodes Inc. Diodes Inc. Infineon Infineon Infineon Rohm
Vdss (V) 40 40 40 40 40 40
Id @ 25°C Ta (A) 31 31 24 23 26
Id @ Tc (A) 100 100 100 100 90 80
Rds On @ 10V (mOhm) 2.7 @ 90A 2.7 @ 90A 2.7 @ 50A 3.0 @ 50A 3.3 @ 45A 3.3 @ 26A
Vgs(th) (V) 4 @ 250µA 4 @ 250µA 2 @ 49µA 4 @ 49µA 2 @ 23µA 2.5 @ 1mA
Qg @ 10V (nC) 68.6 68.6 85 61 40 44
Ciss @ Vds (pF) 4305 @ 25V 4305 @ 25V 6800 @ 20V 4900 @ 20V 2145 @ 25V 2988 @ 20V
Pd Ta (W) 3.6 3.6 2.5 2.5 3
Pd Tc (W) 167 167 83 83 62 35
Tj Range (°C) -55 to 175 -55 to 175 -55 to 150 -55 to 150 -55 to 175
Package 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN
Product Status Active Active Active Active Not For New Designs Active
RoHS3 Compliant Compliant Compliant Compliant Compliant Compliant

Engineering Selection Recommendations

Parametric Equivalent (Direct Substitution):

DMTH4004SPS-13 (Diodes Incorporated) is a parametric equivalent to DMTH4004SPSQ-13. Both parts share identical electrical specifications, package configuration, and compliance status. The primary distinction is packaging format: DMTH4004SPSQ-13 is supplied in Tape & Reel (TR), while DMTH4004SPS-13 is also available in Tape & Reel. Both are Active product status with RoHS3 compliance and MSL 1 rating. This substitute is suitable for direct replacement in all applications.

Manufacturer-Recommended Alternatives (Infineon OptiMOS™ Series):

BSC030N04NSGATMA1 (Infineon Technologies) is recommended as a primary alternative. This part maintains 40V Vdss rating, 100A Tc current capability, and 8-PowerTDFN package compatibility. The continuous drain current at 25°C is reduced to 23A (versus 31A), and on-resistance is slightly higher at 3.0mOhm @ 50A, 10V. Gate charge is lower at 61nC, reducing switching losses. Operating temperature range is -55°C to 150°C. This part is Active status with full RoHS3 compliance.

BSC027N04LSGATMA1 (Infineon Technologies) offers similar performance with 24A @ 25°C and 100A @ Tc. On-resistance matches at 2.7mOhm @ 50A, 10V. Gate charge is higher at 85nC. Input capacitance is elevated at 6800pF @ 20V. Operating temperature is -55°C to 150°C. This part is Active status with full RoHS3 compliance.

Alternative Consideration (Automotive-Qualified):

IPC90N04S5L3R3ATMA1 (Infineon Technologies) is AEC-Q101 automotive-qualified with extended operating temperature to 175°C. This part is marked "Not For New Designs" and should be evaluated only for legacy system support or automotive applications requiring AEC qualification. Continuous drain current specification is provided only at Tc (90A), with no Ta rating. On-resistance is 3.3mOhm @ 45A, 10V. Gate charge is significantly lower at 40nC, and input capacitance is reduced to 2145pF @ 25V.

Secondary Alternative (Rohm Semiconductor):

RS1G260MNTB (Rohm Semiconductor) provides 40V Vdss with 26A @ 25°C and 80A @ Tc. On-resistance is 3.3mOhm @ 26A, 10V. Package is 8-HSOP (8-PowerTDFN compatible). Gate charge is 44nC. This part is Active status with RoHS3 compliance but offers reduced thermal performance (35W @ Tc versus 167W for the main part).

Selection Guidance:

For direct replacement without design modification, select DMTH4004SPS-13. For applications where reduced gate charge and switching losses are beneficial, BSC030N04NSGATMA1 is recommended. For automotive applications requiring AEC-Q101 qualification, IPC90N04S5L3R3ATMA1 is available despite "Not For New Designs" status. For applications with reduced thermal requirements, RS1G260MNTB is suitable.

Frequently Asked Questions (FAQ)

Q: Can DMTH4004SPS-13 be used as a direct replacement for DMTH4004SPSQ-13?

A: Yes. Both parts are manufactured by Diodes Incorporated and share identical electrical specifications, including 40V Vdss, 31A @ 25°C, 100A @ Tc, 2.7mOhm on-resistance, and 8-PowerTDFN package. Both are Active product status with RoHS3 compliance. The parts differ only in packaging format designation.

Q: What is the primary difference between the Diodes and Infineon substitutes?

A: Diodes DMTH4004SPS-13 is a parametric equivalent with identical specifications. Infineon OptiMOS™ parts (BSC030N04NSGATMA1 and BSC027N04LSGATMA1) offer reduced gate charge and lower input capacitance, which reduces switching losses but with slightly reduced continuous drain current at 25°C (23A or 24A versus 31A). All maintain 40V Vdss and 100A @ Tc.

Q: Are all substitute parts in the same package?

A: All listed substitutes use 8-PowerTDFN package configuration, which is mechanically and electrically compatible for PCB layout purposes. RS1G260MNTB is specified as 8-HSOP but is listed as 8-PowerTDFN compatible.

Q: What does "Not For New Designs" mean for IPC90N04S5L3R3ATMA1?

A: This designation indicates the part is in mature or end-of-life status and should not be selected for new product development. It is available for legacy system support and automotive applications requiring AEC-Q101 qualification. New designs should prioritize Active status parts such as BSC030N04NSGATMA1 or DMTH4004SPS-13.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge (40nC for IPC90N04S5L3R3ATMA1 versus 68.6nC for DMTH4004SPSQ-13) reduces switching losses and allows faster switching speeds. Higher gate charge increases driver power dissipation. Selection depends on gate driver capability and thermal budget.

Q: What is the significance of continuous drain current at 25°C (Ta) versus case temperature (Tc)?

A: Continuous drain current at 25°C (Ta) represents the maximum current the device can sustain in a 25°C ambient environment without exceeding junction temperature limits. Current at case temperature (Tc) is measured with the case held at that temperature and represents higher current capability under controlled thermal conditions. DMTH4004SPSQ-13 is rated 31A @ Ta and 100A @ Tc. Substitutes with lower Ta ratings (23A or 24A) may require thermal management evaluation in high-ambient applications.

Q: Are all parts RoHS3 and REACH compliant?

A: Yes. All listed parts are RoHS3 Compliant and REACH Unaffected. All have Moisture Sensitivity Level (MSL) 1, indicating unlimited shelf life without moisture control requirements.

Q: What is the operating temperature range consideration for substitution?

A: DMTH4004SPSQ-13 and IPC90N04S5L3R3ATMA1 operate from -55°C to 175°C. Infineon OptiMOS™ parts (BSC030N04NSGATMA1 and BSC027N04LSGATMA1) operate from -55°C to 150°C. For applications requiring operation above 150°C, the Diodes or Infineon automotive-qualified part is required.

Q: Can RS1G260MNTB be used in high-power applications?

A: RS1G260MNTB has reduced thermal performance (35W @ Tc versus 167W for DMTH4004SPSQ-13) and lower case temperature current rating (80A @ Tc versus 100A). This part is suitable for moderate-power applications but not recommended for high-power switching applications where thermal dissipation is critical.

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