Equivalent & Substitute Parts for DMTH10H032LFVWQ-13

Part Overview

The DMTH10H032LFVWQ-13 is an automotive-grade N-Channel MOSFET manufactured by Diodes Incorporated, categorized under Transistors, FETs, MOSFETs. With a Drain to Source Voltage (Vdss) of 100 V, continuous drain current of 26A (Tc), and Rds(on) of 30mOhm @ 10A, 10V, it is designed for high-reliability power switching applications and is supplied in a surface-mount PowerDI3333-8 (SWP) Type UX package. As this part is currently active, equivalency and substitution become relevant when alternative sourcing, parallel design-in, or second-source validation is required.

Substiute Parts

DMTH10H032LFVWQ-13
Diodes IncorporatedIn Stock: 2712DMTH10H032LFVWQ-13 Datasheet
DMTH10H032LFVWQ-13
Current Part
DMTH10H032LFVW-13
Diodes IncorporatedIn Stock: 4148DMTH10H032LFVW-13 Datasheet
DMTH10H032LFVW-13
Parametric Equivalent
DMTH10H032LFVW-7
Diodes IncorporatedIn Stock: 783DMTH10H032LFVW-7 Datasheet
DMTH10H032LFVW-7
Parametric Equivalent
DMTH10H032LFVWQ-7
Diodes IncorporatedIn Stock: 844DMTH10H032LFVWQ-7 Datasheet
DMTH10H032LFVWQ-7
Parametric Equivalent

Key Parameters

ParameterValue
Manufacturer Part NumberDMTH10H032LFVWQ-13
ManufacturerDiodes Incorporated
CategoryTransistors, FETs, MOSFETs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs30mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11.9 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds683 pF @ 50 V
Power Dissipation (Max)1.7W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount, Wettable Flank
Supplier Device PackagePowerDI3333-8 (SWP) Type UX
Package / Case8-PowerVDFN
Automotive QualificationAEC-Q101
RoHS StatusROHS3 Compliant
REACH StatusREACH Unaffected
Moisture Sensitivity Level (MSL)1 (Unlimited)
Part StatusActive

Substitute Part Grouping Explanation

Substitute MOSFETs for DMTH10H032LFVWQ-13 are determined strictly by matching key electrical and mechanical parameters. The critical parameters for equivalency include FET type, technology, Drain to Source Voltage (Vdss), continuous drain current (Id), Rds(on), drive voltage, gate charge, gate-source voltage rating, input capacitance, power dissipation, operating temperature, mounting style, package type, automotive qualification, RoHS and REACH compliance, and part status. Only parts with identical parameter values in these categories are grouped as parametric equivalents.

Parameter Comparison

Parameter DMTH10H032LFVWQ-13 DMTH10H032LFVW-13 DMTH10H032LFVW-7 DMTH10H032LFVWQ-7
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V100 V100 V100 V
Current - Continuous Drain (Id) @ 25°C26A (Tc)26A (Tc)26A (Tc)26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs30mOhm @ 10A, 10V30mOhm @ 10A, 10V30mOhm @ 10A, 10V30mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA2.5V @ 250µA2.5V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11.9 nC @ 10 V11.9 nC @ 10 V11.9 nC @ 10 V11.9 nC @ 10 V
Vgs (Max)±20V±20V±20V±20V
Input Capacitance (Ciss) (Max) @ Vds683 pF @ 50 V683 pF @ 50 V683 pF @ 50 V683 pF @ 50 V
Power Dissipation (Max)1.7W (Ta)1.7W (Ta)1.7W (Ta)1.7W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount, Wettable FlankSurface Mount, Wettable FlankSurface Mount, Wettable FlankSurface Mount, Wettable Flank
Supplier Device PackagePowerDI3333-8 (SWP) Type UXPowerDI3333-8 (SWP) Type UXPowerDI3333-8 (SWP) Type UXPowerDI3333-8 (SWP) Type UX
Package / Case8-PowerVDFN8-PowerVDFN8-PowerVDFN8-PowerVDFN
Automotive QualificationAEC-Q101--AEC-Q101
RoHS StatusROHS3 CompliantROHS3 CompliantROHS3 CompliantROHS3 Compliant
REACH StatusREACH UnaffectedREACH UnaffectedREACH UnaffectedREACH Unaffected
Moisture Sensitivity Level (MSL)1 (Unlimited)1 (Unlimited)--
Part StatusActiveActiveActiveActive

Engineering Selection Recommendations

When selecting a substitute for DMTH10H032LFVWQ-13, ensure part status is active and compliance with ROHS3 and REACH unaffected status. For applications requiring automotive qualification, select parts denoted as AEC-Q101 qualified. Surface-mount compatibility and package conformity to PowerDI3333-8 (SWP) Type UX and 8-PowerVDFN are mandatory for mechanical fit.

Frequently Asked Questions (FAQ)

Q1: What are the main criteria for selecting a substitute for DMTH10H032LFVWQ-13?
A1: The substitute must have identical FET type, technology, drain to source voltage, continuous drain current, Rds(on), drive voltage, gate charge, input capacitance, power dissipation, temperature range, mounting type, package, automotive qualification, and compliance parameters.

Q2: Are all listed substitute MOSFETs interchangeable in terms of footprint and pinout?
A2: All parts share the surface-mount, wettable flank, PowerDI3333-8 (SWP) Type UX and 8-PowerVDFN package and are mechanically interchangeable.

Q3: How does automotive qualification affect substitution?
A3: For automotive or equivalent high-reliability applications, use only parts with the AEC-Q101 qualification as indicated.

Q4: Are there any differences in RoHS or REACH compliance among the substitutes?
A4: All listed substitutes are ROHS3 compliant and REACH unaffected.

Q5: Is the MSL (Moisture Sensitivity Level) consistent across the substitutes?
A5: The MSL is listed as 1 (Unlimited) for DMTH10H032LFVWQ-13 and DMTH10H032LFVW-13. MSL is not specified for other substitutes in the provided parameters.

Q6: Do the substitute parts differ in electrical performance?
A6: Based on the provided parameters, all substitutes have identical electrical characteristics.

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