DMTH10H015SPSQ-13 Equivalent & Substitute Parts

Part Overview

The DMTH10H015SPSQ-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 100V drain-to-source voltage with continuous drain current capabilities of 8.4A at Ta and 50.5A at Tc. This device is housed in a PowerDI5060-8 surface mount package and is qualified to AEC-Q101 automotive standards. The part is currently active in production with 968 units in stock.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained across critical parameters including drain-to-source voltage rating, continuous drain current, on-resistance characteristics, gate threshold voltage, and operating temperature range. Package compatibility and compliance certifications are also evaluated for substitution validity.

Substiute Parts

DMTH10H015SPSQ-13

Diodes IncorporatedIn Stock: 995DMTH10H015SPSQ-13 Datasheet

Current PartRFQ

FDMS3662

onsemiIn Stock: 2719FDMS3662 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution validity for the DMTH10H015SPSQ-13 is determined by equivalence across the following critical parameters:

Voltage Rating: The substitute part must maintain a Vdss rating of 100V to ensure compatibility with the circuit's voltage stress requirements.

Continuous Drain Current: The substitute must support continuous drain current at both Ta (ambient temperature) and Tc (case temperature) conditions. The DMTH10H015SPSQ-13 specifies 8.4A at Ta and 50.5A at Tc.

On-Resistance (Rds On): The substitute must maintain on-resistance characteristics within acceptable limits to preserve circuit efficiency and thermal performance. The reference specification is 14.5 mOhm maximum at 20A, 10V gate-source voltage.

Gate Threshold Voltage (Vgs(th)): The substitute must have a gate threshold voltage of 4V or less at 250µA drain current to ensure proper gate drive compatibility.

Gate Charge (Qg): The substitute must maintain gate charge characteristics to preserve switching speed and drive circuit performance.

Operating Temperature Range: The substitute must support the full operating temperature range of -55°C to 175°C junction temperature.

Package and Mounting: The substitute must be compatible with surface mount assembly processes and fit within the mechanical constraints of the PowerDI5060-8 or equivalent package footprint.

Compliance: The substitute must maintain RoHS3 compliance and automotive-grade qualification status.

Parameter Comparison

Engineering Selection Recommendations

The FDMS3662 from onsemi is identified as a substitute for the DMTH10H015SPSQ-13 based on electrical parameter equivalence across voltage rating, continuous drain current, and on-resistance specifications. Both devices maintain N-Channel MOSFET technology with 100V Vdss rating and comparable current handling capabilities.

Compliance Alignment: Both parts maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory compatibility in automotive and industrial applications.

Package Compatibility: Both devices utilize the 8-PowerTDFN surface mount package, enabling direct footprint compatibility on existing printed circuit boards.

Operating Temperature Consideration: The DMTH10H015SPSQ-13 supports a maximum junction temperature of 175°C, while the FDMS3662 is rated to 150°C. Applications requiring operation above 150°C junction temperature must retain the original DMTH10H015SPSQ-13 device.

Gate Charge and Input Capacitance Differences: The FDMS3662 exhibits higher gate charge (75 nC versus 30.1 nC) and input capacitance (4620 pF versus 2343 pF). These differences affect gate drive circuit requirements and switching speed characteristics. Circuit designs with tight gate drive timing constraints or limited drive current capability must account for these parameter variations.

Power Dissipation Differences: The FDMS3662 demonstrates higher power dissipation capability at case temperature (104W versus 55W), indicating improved thermal performance under high-current conditions. This characteristic may provide thermal margin in power-intensive applications.

Product Status: Both devices maintain active production status with adequate inventory availability, supporting long-term supply chain reliability.

Frequently Asked Questions (FAQ)

Q: Can the FDMS3662 be used as a direct replacement for the DMTH10H015SPSQ-13 in all applications?

A: The FDMS3662 is electrically compatible for applications operating at junction temperatures up to 150°C. Applications requiring operation above 150°C must use the original DMTH10H015SPSQ-13. Additionally, gate drive circuits must accommodate the higher gate charge specification of the FDMS3662.

Q: What is the significance of the gate charge difference between these two devices?

A: Gate charge (Qg) determines the amount of charge required to switch the MOSFET from off to on state. The FDMS3662 requires 75 nC compared to 30.1 nC for the DMTH10H015SPSQ-13. Gate drive circuits must supply sufficient current to transfer this charge within the required switching time. Higher gate charge may increase switching losses and require higher drive current capability.

Q: Are the package footprints identical between these two devices?

A: Both devices use the 8-PowerTDFN package type, which provides identical surface mount footprints. No printed circuit board layout modifications are required for substitution.

Q: How do the input capacitance differences affect circuit performance?

A: Input capacitance (Ciss) affects the gate drive circuit's charging time and switching speed. The FDMS3662 exhibits higher input capacitance (4620 pF versus 2343 pF), which may increase switching transition times and gate drive power consumption. Applications with frequency-dependent performance requirements must evaluate this parameter.

Q: Do both devices meet automotive qualification requirements?

A: The DMTH10H015SPSQ-13 carries AEC-Q101 automotive qualification. The FDMS3662 is specified as a PowerTrench® series device from onsemi. Both maintain ROHS3 compliance and REACH unaffected status. Specific automotive qualification status for the FDMS3662 must be confirmed through the manufacturer's documentation.

Q: What is the impact of the power dissipation difference on thermal design?

A: The FDMS3662 supports higher power dissipation at case temperature (104W versus 55W), indicating superior thermal performance. In applications operating near thermal limits, the FDMS3662 may provide additional thermal margin. However, actual thermal performance depends on printed circuit board thermal design, copper area, and heat sink implementation.

Q: Can these devices be used interchangeably in existing inventory?

A: Substitution requires verification that the application's gate drive circuit can supply the higher gate charge requirement of the FDMS3662 and that the maximum operating temperature does not exceed 150°C junction temperature. Once these conditions are confirmed, the devices are mechanically and electrically interchangeable.