DMTH10H010LCT N-Channel MOSFET 100V 108A Equivalent & Substitute Parts

Part Overview

The DMTH10H010LCT is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 100V drain-to-source voltage with 108A continuous drain current at Tc. This device is packaged in TO-220-3 through-hole configuration and is designed for high-current switching applications. The part maintains Active product status and is RoHS3 compliant with unlimited moisture sensitivity rating.

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, and thermal performance specifications. Substitutes must maintain compatible package geometry and operating temperature range to ensure direct board-level replacement capability.

Substiute Parts

DMTH10H010LCT

Diodes IncorporatedIn Stock: 911DMTH10H010LCT Datasheet

Current PartRFQ

CSD19503KCS

Texas InstrumentsIn Stock: 1516CSD19503KCS Datasheet

MFR RecommendedRFQ

IXFP130N10T2

IXYSIn Stock: 1529IXFP130N10T2 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the DMTH10H010LCT is determined by the following critical parameters:

Voltage Rating Compatibility: Substitute parts must maintain a Vdss rating equal to or greater than 100V to ensure safe operation in circuits designed for this voltage class.

Current Capability: Substitute parts must provide continuous drain current (Id) equal to or exceeding 108A at rated temperature to support the same load conditions without thermal derating.

On-Resistance Performance: Rds On values must be comparable or lower to maintain equivalent or improved switching efficiency and heat dissipation characteristics.

Package Geometry: All substitutes must use TO-220-3 through-hole packaging to ensure mechanical and electrical compatibility with existing PCB layouts.

Operating Temperature Range: Substitute parts must support the full -55°C to 175°C operating range to maintain functionality across all specified environmental conditions.

Compliance Status: All substitute parts must maintain RoHS3 compliance and REACH unaffected status to satisfy regulatory requirements.

Two substitute parts meet these criteria:

IXFP130N10T2 (IXYS): Matches 100V Vdss rating with enhanced current capability (130A), improved on-resistance (9.1mOhm), and higher power dissipation (360W Tc). Maintains TO-220-3 package and full temperature range compatibility.

CSD19503KCS (Texas Instruments): Provides reduced Vdss rating (80V) with comparable current capability (100A) and on-resistance (9.2mOhm). Suitable for applications where 80V voltage margin is sufficient. Maintains TO-220-3 package and full temperature range compatibility.

Parameter Comparison

Engineering Selection Recommendations

IXFP130N10T2 Selection Criteria:

The IXFP130N10T2 from IXYS provides direct electrical compatibility with the DMTH10H010LCT while offering performance enhancements. Both devices maintain identical 100V Vdss ratings, ensuring equivalent voltage margin in circuit designs. The IXFP130N10T2 delivers 130A continuous drain current compared to 108A, providing 20% additional current capacity. On-resistance performance is superior at 9.1mOhm versus 9.5mOhm, resulting in lower conduction losses. Power dissipation capability is significantly higher at 360W (Tc) versus 166W (Tc), enabling operation in higher-power applications. Both parts maintain identical operating temperature range (-55°C to 175°C), RoHS3 compliance, and TO-220-3 package geometry. The IXFP130N10T2 is suitable for direct replacement in applications requiring equal or greater performance margins.

CSD19503KCS Selection Criteria:

The CSD19503KCS from Texas Instruments provides substitution capability for applications where the 100V voltage rating of the DMTH10H010LCT exceeds circuit requirements. This device operates at 80V Vdss, reducing voltage stress in lower-voltage applications. Continuous drain current is rated at 100A (Ta), slightly below the 108A (Tc) rating of the original part. On-resistance is comparable at 9.2mOhm. Gate charge is lower at 36nC versus 53.7nC, enabling faster switching transitions. Power dissipation is rated at 188W (Tc), exceeding the original 166W rating. Operating temperature range, RoHS3 compliance, and TO-220-3 package geometry remain identical. The CSD19503KCS is suitable for replacement in applications operating below 80V where reduced gate charge and improved switching speed provide circuit benefits.

Both substitute parts maintain Active product status and full regulatory compliance, ensuring long-term availability and supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can the IXFP130N10T2 be used as a direct replacement for the DMTH10H010LCT?

A: Yes. Both devices share identical 100V Vdss ratings, TO-220-3 package geometry, and operating temperature range (-55°C to 175°C). The IXFP130N10T2 provides equal or superior electrical performance across all critical parameters. Pin configuration and mounting requirements are identical, enabling direct PCB substitution.

Q: What is the primary difference between the IXFP130N10T2 and CSD19503KCS substitutes?

A: The IXFP130N10T2 maintains the 100V Vdss rating of the original DMTH10H010LCT with enhanced current capability (130A) and power dissipation (360W Tc). The CSD19503KCS operates at reduced voltage (80V Vdss) with comparable current (100A) and lower gate charge (36nC). Selection depends on circuit voltage requirements and switching speed priorities.

Q: Is the CSD19503KCS suitable for circuits designed for 100V operation?

A: The CSD19503KCS is rated for 80V maximum Vdss and is not suitable for circuits where the supply voltage or transient overvoltage conditions exceed 80V. Use this substitute only in applications confirmed to operate below 80V continuous voltage.

Q: Do all three parts require identical PCB layout considerations?

A: Yes. All three parts use TO-220-3 through-hole packaging with identical pin assignments and mounting hole geometry. PCB layouts designed for the DMTH10H010LCT require no modification for either substitute part.

Q: What is the significance of gate charge differences between these parts?

A: Gate charge (Qg) affects switching speed and driver circuit requirements. The DMTH10H010LCT requires 53.7nC, the IXFP130N10T2 requires 130nC, and the CSD19503KCS requires 36nC. Higher gate charge increases switching transition time and driver power dissipation. Lower gate charge enables faster switching but may require driver circuit optimization.

Q: Are all three parts RoHS3 compliant?

A: Yes. The DMTH10H010LCT, IXFP130N10T2, and CSD19503KCS are all RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Q: What thermal performance differences exist between these parts?

A: The DMTH10H010LCT is rated for 166W (Tc) power dissipation. The IXFP130N10T2 provides 360W (Tc), enabling operation in higher-power applications. The CSD19503KCS provides 188W (Tc). Higher power dissipation ratings allow operation at higher current levels or reduced heatsink requirements.

Q: Can these parts be used interchangeably in existing designs?

A: The IXFP130N10T2 provides direct interchangeability with identical voltage rating and superior performance. The CSD19503KCS requires circuit voltage verification before substitution due to its 80V Vdss rating. Both maintain identical package geometry and operating temperature range, eliminating mechanical compatibility concerns.