DMTH10H005LCT N-Channel MOSFET 100V 140A Equivalent & Substitute Parts

Part Overview

The DMTH10H005LCT is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 100V drain-to-source voltage and 140A continuous drain current in a Through Hole TO-220AB package. This device is classified as Active product status and carries AEC-Q101 automotive qualification. The part is suitable for high-current switching applications requiring robust thermal performance and automotive-grade reliability.

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, and compatible package form factors. Substitutes enable design flexibility, inventory optimization, and continuity of supply across manufacturing lifecycles.

Substiute Parts

DMTH10H005LCT

Diodes IncorporatedIn Stock: 1085DMTH10H005LCT Datasheet

Current PartRFQ

FDP045N10A-F102

onsemiIn Stock: 84227FDP045N10A-F102 Datasheet

MFR RecommendedRFQ

STP170N8F7

STMicroelectronicsIn Stock: 1382STP170N8F7 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution logic for the DMTH10H005LCT is based on the following critical parameters:

Primary Matching Criteria:

• Drain-to-Source Voltage (Vdss): Substitute must equal or exceed 100V
• Continuous Drain Current (Id): Substitute must equal or exceed 140A at 25°C
• Package Type: Through Hole TO-220 family (TO-220AB, TO-220-3, TO-220)
• FET Type: N-Channel MOSFET technology
• Gate Drive Voltage: 10V nominal drive capability

Secondary Compatibility Factors:

• On-Resistance (Rds On): Lower or equivalent values ensure thermal performance
• Gate Charge (Qg): Affects switching speed and drive circuit requirements
• Power Dissipation Rating: Supports thermal management in target applications
• Operating Temperature Range: Minimum -55°C to 150°C overlap required
• Compliance: RoHS3 and REACH status alignment

The identified substitutes FDP045N10A-F102 and STP170N8F7 are grouped based on electrical parameter compatibility within the specified tolerance bands. Both devices maintain N-Channel MOSFET topology and Through Hole mounting, enabling direct functional replacement in circuit designs.

Parameter Comparison

Engineering Selection Recommendations

FDP045N10A-F102 (onsemi PowerTrench®)

The FDP045N10A-F102 is classified as Active product status with continuous availability. This device matches the 100V Vdss rating of the DMTH10H005LCT and maintains N-Channel MOSFET topology in a compatible TO-220-3 Through Hole package. The FDP045N10A-F102 delivers 120A continuous drain current, representing a 14% reduction from the primary part's 140A rating. On-resistance is 4.5 mOhm at 100A and 10V gate drive, providing improved thermal efficiency. Power dissipation capability reaches 263W, exceeding the primary part's 187W rating. Operating temperature range extends to 175°C, providing additional thermal margin. RoHS3 compliance and REACH unaffected status align with regulatory requirements. This substitute is suitable for applications where the 120A current rating satisfies design requirements and thermal performance enhancement is beneficial.

STP170N8F7 (STMicroelectronics STripFET™ F7)

The STP170N8F7 is classified as Obsolete product status. This device operates at 80V Vdss, representing a 20V reduction from the DMTH10H005LCT's 100V rating. Continuous drain current is 120A at 25°C. On-resistance is 3.9 mOhm at 60A and 10V gate drive, delivering superior switching efficiency. Power dissipation reaches 250W. Operating temperature range extends to 175°C. The device is mounted in a TO-220 Through Hole package compatible with the primary part's form factor. RoHS3 compliance and REACH unaffected status are maintained. Due to Obsolete product status and reduced voltage rating, this substitute is applicable only in applications where 80V Vdss is sufficient and long-term supply continuity is not a design constraint.

Frequently Asked Questions (FAQ)

Q: Can FDP045N10A-F102 directly replace DMTH10H005LCT in all applications?

A: FDP045N10A-F102 is electrically compatible for applications where 120A continuous drain current meets design requirements. Both devices share 100V Vdss rating, N-Channel MOSFET topology, and 10V gate drive specification. TO-220-3 and TO-220AB packages are mechanically compatible in standard Through Hole PCB layouts. Verify application current requirements before substitution.

Q: What is the significance of the voltage rating difference between DMTH10H005LCT (100V) and STP170N8F7 (80V)?

A: Drain-to-Source voltage rating defines the maximum voltage the device can block in the off-state. The STP170N8F7's 80V rating is 20V lower than the primary part's 100V specification. Substitution is valid only in applications where the maximum operating voltage does not exceed 80V. Exceeding this rating causes device failure.

Q: How do on-resistance values affect thermal performance?

A: On-resistance (Rds On) determines conduction losses during the on-state. Lower Rds On values reduce power dissipation and heat generation. FDP045N10A-F102 (4.5 mOhm) and STP170N8F7 (3.9 mOhm) both provide lower on-resistance than DMTH10H005LCT (5 mOhm), resulting in improved thermal efficiency and reduced heatsink requirements in equivalent current applications.

Q: Are the TO-220AB, TO-220-3, and TO-220 packages interchangeable?

A: All three packages are Through Hole variants of the TO-220 family with identical pin configurations and PCB footprints. TO-220AB, TO-220-3, and TO-220 designations refer to packaging variations from different manufacturers. Mechanical and electrical compatibility is maintained across these variants for standard circuit board applications.

Q: What does Obsolete product status mean for STP170N8F7?

A: Obsolete status indicates the manufacturer has discontinued production and support for STP170N8F7. While existing inventory may be available, long-term supply cannot be guaranteed. New designs should prioritize Active status parts such as FDP045N10A-F102 to ensure sustained component availability throughout the product lifecycle.

Q: How do gate charge specifications impact circuit design?

A: Gate charge (Qg) represents the total charge required to switch the MOSFET from off to on state. FDP045N10A-F102 (74 nC) requires less gate charge than DMTH10H005LCT (114 nC), enabling faster switching with lower drive circuit power consumption. STP170N8F7 (120 nC) requires slightly more gate charge, potentially requiring drive circuit optimization.

Q: Are all three devices RoHS3 compliant?

A: Yes. DMTH10H005LCT, FDP045N10A-F102, and STP170N8F7 are all RoHS3 compliant and REACH unaffected. These compliance statuses ensure compatibility with environmental and regulatory requirements for commercial and industrial applications.

Q: What is the continuous drain current limitation for each device?

A: DMTH10H005LCT supports 140A continuous drain current at 25°C. FDP045N10A-F102 and STP170N8F7 both support 120A continuous drain current at 25°C. Applications requiring current levels above 120A must use the primary part or identify alternative devices with higher current ratings.