DMT8012LSS-13 Equivalent & Substitute Parts

Part Overview

The DMT8012LSS-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 80V drain-to-source voltage with 9.7A continuous drain current at 25°C. This device is housed in an 8-SO surface mount package and is qualified to AEC-Q101 automotive standards. The part is currently active in production with 10,100 pieces in stock inventory.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained within the specified parameter ranges. Alternative devices may be required due to supply constraints, design optimization, or application-specific requirements while maintaining functional equivalence.

Substiute Parts

DMT8012LSS-13

Diodes IncorporatedIn Stock: 10208DMT8012LSS-13 Datasheet

Current PartRFQ

FDS86141

onsemiIn Stock: 7422FDS86141 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the DMT8012LSS-13 is determined by the following critical parameters:

Electrical Compatibility Criteria:

• Drain-to-source voltage rating must equal or exceed 80V
• Continuous drain current must support the application requirements
• On-resistance (Rds On) must be compatible with thermal and efficiency constraints
• Gate threshold voltage must fall within acceptable switching characteristics
• Operating temperature range must encompass -55°C to 150°C
• Maximum power dissipation rating must be adequate for the application

Mechanical Compatibility Criteria:

• Package type must be 8-SOIC (0.154", 3.90mm Width)
• Surface mount configuration required
• Tape & Reel packaging format

Compliance Requirements:

• RoHS3 compliance mandatory
• Moisture Sensitivity Level 1 (Unlimited)
• REACH Unaffected status required

The FDS86141 from onsemi is identified as a manufacturer-recommended substitute based on these parameters.

Parameter Comparison

Engineering Selection Recommendations

DMT8012LSS-13 (Primary Selection)

The DMT8012LSS-13 is the specified component for applications requiring 80V rated N-Channel MOSFET performance with 9.7A continuous drain current capability. This device maintains active production status with AEC-Q101 automotive qualification. The part is RoHS3 compliant with MSL 1 rating, suitable for standard surface mount assembly processes.

FDS86141 (Substitute Selection)

The FDS86141 from onsemi is a manufacturer-recommended substitute offering higher voltage rating (100V) and increased power dissipation capability (2.5W). This device is also AEC-Q101 qualified and maintains identical compliance certifications (RoHS3, MSL 1, REACH Unaffected). The substitute is suitable for applications where higher voltage margin or thermal headroom is beneficial.

Substitution Considerations

Both devices share identical operating temperature range (-55°C to 150°C), package configuration (8-SOIC), and compliance status. The FDS86141 provides higher voltage rating and power dissipation, while the DMT8012LSS-13 offers lower on-resistance at rated current and lower gate charge. Selection between these parts depends on specific application voltage and current requirements within the rated specifications of each device.

Frequently Asked Questions (FAQ)

Q: Can the FDS86141 directly replace the DMT8012LSS-13 in all applications?

A: Direct substitution is possible when the application voltage does not exceed 80V and the continuous drain current requirement does not exceed 7A. The FDS86141 higher voltage rating (100V) and lower continuous current rating (7A versus 9.7A) must be evaluated against specific circuit requirements. Both devices share identical package type, operating temperature range, and compliance certifications.

Q: What are the key electrical differences between these two parts?

A: The DMT8012LSS-13 provides 80V rating with 9.7A continuous current and 16.5mOhm on-resistance. The FDS86141 provides 100V rating with 7A continuous current and 23mOhm on-resistance. The DMT8012LSS-13 has higher gate charge (34nC versus 16.5nC), while the FDS86141 offers higher power dissipation capability (2.5W versus 1.5W).

Q: Are both parts qualified to the same automotive standards?

A: Both the DMT8012LSS-13 and FDS86141 are AEC-Q101 qualified. Both maintain RoHS3 compliance, MSL 1 rating, and REACH Unaffected status. Compliance certifications are identical between the two devices.

Q: Do these parts use the same package and mounting configuration?

A: Yes. Both devices use 8-SOIC (0.154", 3.90mm Width) surface mount package with Tape & Reel packaging format. PCB footprints and assembly processes are identical.

Q: What is the gate charge difference and how does it affect circuit design?

A: The DMT8012LSS-13 has 34nC gate charge at 10V, while the FDS86141 has 16.5nC. Lower gate charge in the FDS86141 results in faster switching transitions and reduced gate drive power requirements. This difference may affect gate driver selection and switching frequency performance in high-speed applications.

Q: Which part should be selected for new designs?

A: Selection depends on application-specific requirements. For applications requiring maximum continuous current (9.7A) at 80V with lower gate charge sensitivity, the DMT8012LSS-13 is appropriate. For applications benefiting from higher voltage margin (100V) and increased thermal capability (2.5W), the FDS86141 is suitable. Both parts are active in production with adequate inventory availability.