DMT8012LPS-13 Equivalent & Substitute Parts

Part Overview

The DMT8012LPS-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 80V drain-to-source voltage with continuous drain current of 9A at Ta and 65A at Tc. This device is packaged in a Surface Mount PowerDI5060-8 configuration and is designed for power switching applications requiring high current handling and thermal performance. The part maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained within the specified parameter ranges for this MOSFET category, allowing for design flexibility and supply chain alternatives.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	80	V
Continuous Drain Current @ 25°C (Ta)	9	A
Continuous Drain Current @ 25°C (Tc)	65	A
RDS(on) Max @ 12A, 10V	17	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3	V
Gate Charge (Qg) @ 10V	34	nC
Input Capacitance (Ciss) @ 40V	1949	pF
Power Dissipation (Ta)	2.1	W
Power Dissipation (Tc)	113	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-PowerTDFN	-
Mounting Type	Surface Mount	-

Substitute Part Grouping Explanation

Substitute parts for the DMT8012LPS-13 are qualified based on the following electrical and mechanical criteria:

Primary Substitution Criteria:

FET Type: N-Channel MOSFET (Metal Oxide Semiconductor)
Drain-to-Source Voltage (Vdss): Equal to or greater than 80V
Continuous Drain Current: Capable of supporting application requirements at specified temperature conditions
Gate Drive Voltage Compatibility: Operating within ±20V maximum gate voltage specification
Operating Temperature Range: Minimum -55°C to 150°C junction temperature
Surface Mount Packaging: Compatible with PCB assembly processes
Compliance Status: RoHS3 compliant, REACH unaffected

Electrical Performance Parameters:

RDS(on) characteristics within acceptable range for switching applications
Gate charge and input capacitance suitable for driver circuit compatibility
Power dissipation ratings adequate for thermal management requirements

Mechanical Compatibility:

Package footprint and pin configuration compatible with PowerDI5060-8 or equivalent power package formats
Tape & Reel or Cut Tape packaging suitable for automated assembly

Parameter Comparison

Parameter	DMT8012LPS-13 (Diodes)	FDMC86324 (onsemi)	PJQ5476AL_R2_00001 (Panjit)
Manufacturer	Diodes Incorporated	onsemi	Panjit International Inc.
FET Type	N-Channel	N-Channel	N-Channel
Vdss (V)	80	80	100
Id @ 25°C Ta (A)	9	7	6.5
Id @ 25°C Tc (A)	65	20	42
RDS(on) Max (mOhm)	17 @ 12A, 10V	23 @ 7A, 10V	25 @ 20A, 10V
Vgs(th) Max (V)	3 @ 250µA	4 @ 250µA	2.5 @ 250µA
Gate Charge Qg (nC)	34 @ 10V	18 @ 10V	31 @ 10V
Ciss Max (pF)	1949 @ 40V	965 @ 50V	1519 @ 30V
Power Dissipation Ta (W)	2.1	2.3	2
Power Dissipation Tc (W)	113	41	83
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150
Package	8-PowerTDFN	8-PowerTDFN	8-PowerVDFN
Mounting Type	Surface Mount	Surface Mount	Surface Mount
RoHS3 Compliant	Yes	Yes	Yes
REACH Status	Unaffected	Unaffected	Unaffected
Product Status	Active	Active	Active

Engineering Selection Recommendations

FDMC86324 (onsemi PowerTrench®): This substitute operates at the same 80V Vdss rating with reduced continuous drain current specifications (7A Ta, 20A Tc compared to 9A Ta, 65A Tc). The FDMC86324 features lower gate charge (18 nC) and reduced input capacitance (965 pF), resulting in faster switching characteristics. RDS(on) is slightly higher at 23 mOhm. This part is suitable for applications where the lower current ratings are acceptable and faster switching response is beneficial. All compliance certifications match the primary part. Packaging is Cut Tape format versus Tape & Reel.

PJQ5476AL_R2_00001 (Panjit International): This substitute operates at a higher 100V Vdss rating, providing additional voltage margin for applications with voltage transients or design headroom requirements. Continuous drain current is lower (6.5A Ta, 42A Tc). The gate threshold voltage is lower at 2.5V, enabling operation with lower gate drive voltages. Gate charge and input capacitance are comparable to the primary part. RDS(on) specification is provided at different test conditions (25 Ohm @ 20A, 10V). Package format is 8-PowerVDFN with DFN5060-8 supplier designation. All compliance certifications match the primary part. Moisture sensitivity level is listed as Not Applicable.

Both substitute parts maintain Active product status, RoHS3 compliance, and REACH unaffected status. Selection between the primary part and substitutes depends on specific application requirements for current handling, switching speed, voltage rating, and thermal management characteristics.

Frequently Asked Questions (FAQ)

Q: Can FDMC86324 be used as a direct replacement for DMT8012LPS-13?

A: FDMC86324 is electrically compatible for applications requiring 80V operation and continuous drain currents up to 7A (Ta) or 20A (Tc). The lower current ratings and different thermal characteristics require verification that application current demands do not exceed FDMC86324 specifications. Both parts use 8-PowerTDFN packaging with compatible pinouts.

Q: What are the key differences between DMT8012LPS-13 and PJQ5476AL_R2_00001?

A: The primary differences are: (1) PJQ5476AL_R2_00001 has 100V Vdss versus 80V, providing higher voltage rating; (2) Continuous drain current is lower at 6.5A (Ta) and 42A (Tc); (3) Gate threshold voltage is lower at 2.5V; (4) Package designation differs (8-PowerVDFN versus 8-PowerTDFN). Both operate across -55°C to 150°C and maintain full compliance certifications.

Q: Are the package footprints identical between all three parts?

A: DMT8012LPS-13 and FDMC86324 both use 8-PowerTDFN packaging with identical footprints. PJQ5476AL_R2_00001 uses 8-PowerVDFN packaging, which has a different footprint designation. PCB layout compatibility must be verified before substitution.

Q: Which substitute part has the lowest gate charge?

A: FDMC86324 has the lowest gate charge at 18 nC @ 10V, compared to 34 nC for DMT8012LPS-13 and 31 nC for PJQ5476AL_R2_00001. Lower gate charge enables faster switching transitions and reduced driver power dissipation.

Q: Can PJQ5476AL_R2_00001 be used in applications rated for 80V operation?

A: Yes. PJQ5476AL_R2_00001 is rated for 100V Vdss, which exceeds the 80V requirement. The higher voltage rating provides additional safety margin and is suitable for 80V applications. Current handling capability must still be verified against application requirements.

Q: What is the impact of different RDS(on) values on circuit performance?

A: RDS(on) directly affects conduction losses and heat dissipation. DMT8012LPS-13 has 17 mOhm, FDMC86324 has 23 mOhm, and PJQ5476AL_R2_00001 has 25 Ohm (specified at different test conditions). Higher RDS(on) results in increased power dissipation during conduction. Thermal design must account for these differences.

Q: Are all three parts suitable for high-frequency switching applications?

A: Gate charge and input capacitance affect switching speed. FDMC86324 has the lowest gate charge (18 nC) and lowest input capacitance (965 pF), making it most suitable for high-frequency operation. DMT8012LPS-13 and PJQ5476AL_R2_00001 have higher capacitance values, which may limit maximum switching frequency depending on driver capabilities.

Q: Do all parts meet the same compliance and regulatory requirements?

A: All three parts are RoHS3 compliant and REACH unaffected. All maintain Active product status. Moisture sensitivity level is 1 (Unlimited) for DMT8012LPS-13 and FDMC86324, while PJQ5476AL_R2_00001 lists Not Applicable. All parts carry EAR99 ECCN classification and identical HTSUS codes.

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