DMT69M8LSS-13 Equivalent & Substitute Parts

Part Overview

The DMT69M8LSS-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 60V drain-to-source voltage with 9.8A continuous drain current at 25°C. This device is packaged in an 8-SO surface mount configuration and is designed for general-purpose switching applications in power management circuits.

The DMT69M8LSS-13 has reached obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	60	V
Current - Continuous Drain (Id) @ 25°C	9.8	A
Rds On (Max) @ Id, Vgs	12 mOhm @ 13.5A, 10V	—
Vgs(th) (Max) @ Id	2	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	33.5	nC @ 10V
Vgs (Max)	±16	V
Input Capacitance (Ciss) (Max) @ Vds	1925	pF @ 30V
Power Dissipation (Max)	1.25	W
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the obsolete DMT69M8LSS-13 is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain-to-Source Voltage (Vdss) must equal or exceed 60V
Continuous Drain Current (Id) must meet or exceed 9.8A at 25°C
Gate-Source Voltage (Vgs) rating must accommodate ±16V operation
On-state resistance (Rds On) must not significantly degrade circuit performance
Threshold voltage (Vgs(th)) must remain within acceptable switching margins
Gate charge (Qg) and input capacitance (Ciss) must be compatible with existing gate drive circuitry

Mechanical Compatibility Requirements:

Mounting type must be Surface Mount
Package must be 8-SOIC (0.154", 3.90mm Width) for PCB footprint compatibility
Moisture Sensitivity Level (MSL) must be 1 (Unlimited) or equivalent

Regulatory Compliance Requirements:

RoHS3 Compliance mandatory
REACH Unaffected status required

All substitute parts listed below satisfy these core substitution criteria.

Parameter Comparison

Parameter	DMT69M8LSS-13	DMT6012LSS-13	AO4266E	FDS5670
Manufacturer	Diodes Incorporated	Diodes Incorporated	Alpha & Omega Semiconductor Inc.	onsemi
Product Status	Obsolete	Active	Active	Active
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Vdss	60 V	60 V	60 V	60 V
Id @ 25°C	9.8 A	10.4 A	11 A	10 A
Rds On (Max) @ Vgs 10V	12 mOhm @ 13.5A	11 mOhm @ 10A	13.5 mOhm @ 11A	14 mOhm @ 10A
Vgs(th) (Max) @ 250µA	2 V	2 V	2.2 V	4 V
Gate Charge (Qg) @ 10V	33.5 nC	22.2 nC	10 nC @ 4.5V	70 nC
Vgs (Max)	±16 V	±20 V	±20 V	±20 V
Ciss (Max) @ 30V	1925 pF	1522 pF	755 pF	2900 pF @ 15V
Power Dissipation (Max)	1.25 W	1.2 W	3.1 W	2.5 W
Operating Temperature	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C
Package / Case	8-SOIC (0.154", 3.90mm)	8-SOIC (0.154", 3.90mm)	8-SOIC (0.154", 3.90mm)	8-SOIC (0.154", 3.90mm)
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

DMT6012LSS-13 (Diodes Incorporated)

The DMT6012LSS-13 is the primary substitute for the obsolete DMT69M8LSS-13. Both devices are manufactured by Diodes Incorporated and share identical voltage ratings (60V Vdss) and operating temperature range (-55°C to 150°C). The DMT6012LSS-13 offers improved specifications with higher continuous drain current (10.4A versus 9.8A), lower on-state resistance (11 mOhm versus 12 mOhm), and reduced gate charge (22.2 nC versus 33.5 nC). The device maintains full compatibility with the 8-SOIC package footprint and carries Active product status with established supply chain availability. RoHS3 compliance and MSL 1 rating are maintained.

AO4266E (Alpha & Omega Semiconductor Inc.)

The AO4266E is an alternative substitute manufactured by Alpha & Omega Semiconductor Inc. under the AlphaSGT™ series. This device meets all electrical and mechanical compatibility requirements with 60V Vdss and 11A continuous drain current. The AO4266E features the lowest gate charge (10 nC @ 4.5V) and input capacitance (755 pF @ 30V) among the substitute options, which may provide advantages in high-frequency switching applications. The device is Active status with RoHS3 compliance and MSL 1 rating. Higher power dissipation (3.1W) should be evaluated against thermal design constraints.

FDS5670 (onsemi)

The FDS5670 is a substitute option from onsemi, part of the PowerTrench® series. This device meets core electrical requirements with 60V Vdss and 10A continuous drain current. The FDS5670 features higher gate charge (70 nC @ 10V) and input capacitance (2900 pF @ 15V) compared to other substitutes, which may require gate drive circuit adjustment. The device carries Active product status with RoHS3 compliance and MSL 1 rating. Packaging is specified as 8-SOIC with compatible footprint dimensions.

All three substitute parts are Active status devices with established supply availability, full regulatory compliance, and identical package compatibility with the original DMT69M8LSS-13.

Frequently Asked Questions (FAQ)

Q: Can the DMT6012LSS-13 directly replace the DMT69M8LSS-13 without circuit modifications?

A: The DMT6012LSS-13 is electrically and mechanically compatible with the DMT69M8LSS-13. Both devices share identical 60V Vdss rating, compatible gate-source voltage ratings, and identical 8-SOIC package footprint. The DMT6012LSS-13 offers improved performance characteristics (higher current rating, lower on-state resistance, reduced gate charge). No circuit modifications are required for direct substitution.

Q: What is the primary difference between the three substitute parts?

A: All three substitutes meet the core electrical requirements (60V Vdss, ≥9.8A continuous drain current, 8-SOIC package). Key differences include: DMT6012LSS-13 offers the lowest on-state resistance (11 mOhm) and moderate gate charge (22.2 nC); AO4266E provides the lowest gate charge (10 nC) and input capacitance (755 pF), suitable for high-frequency applications; FDS5670 features higher gate charge (70 nC) and input capacitance (2900 pF), which may require gate drive circuit evaluation.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All three substitute parts (DMT6012LSS-13, AO4266E, and FDS5670) carry RoHS3 Compliant status and MSL 1 (Unlimited) moisture sensitivity rating, matching the original DMT69M8LSS-13 compliance profile.

Q: Will the gate drive circuit require adjustment when substituting to AO4266E or FDS5670?

A: Gate drive circuit compatibility depends on the specific gate charge and input capacitance characteristics. The AO4266E features significantly lower gate charge (10 nC) and capacitance (755 pF) compared to the original (33.5 nC, 1925 pF), which may reduce gate drive current requirements. The FDS5670 features higher gate charge (70 nC) and capacitance (2900 pF), which may increase gate drive current requirements. Existing gate drive circuits designed for the DMT69M8LSS-13 specifications should be evaluated against substitute part datasheet values.

Q: Is the 8-SOIC package footprint identical across all substitute parts?

A: Yes. All substitute parts are specified in 8-SOIC (0.154", 3.90mm Width) package format, providing identical PCB footprint compatibility with the original DMT69M8LSS-13. No PCB layout modifications are required.

Q: What is the inventory status of each substitute part?

A: DMT6012LSS-13 has 25,300 pieces in stock; AO4266E has 4,618 pieces in stock; FDS5670 has 21,071 pieces in stock. All three parts are Active status devices with established supply availability.

Q: Can the FDS5670 be used in applications requiring the lowest on-state resistance?

A: No. The FDS5670 has an on-state resistance of 14 mOhm @ 10A, 10V, which is higher than both the DMT6012LSS-13 (11 mOhm) and the original DMT69M8LSS-13 (12 mOhm). For applications requiring minimal on-state resistance, the DMT6012LSS-13 is the preferred substitute.

Q: Are there thermal considerations when selecting between substitute parts?

A: Yes. Power dissipation ratings differ: DMT6012LSS-13 (1.2W), AO4266E (3.1W), and FDS5670 (2.5W). Applications with tight thermal constraints should prioritize the DMT6012LSS-13 or FDS5670. The AO4266E's higher power dissipation rating may provide margin in thermally demanding applications but requires adequate heat dissipation design.

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