DMT69M8LPS-13 Equivalent & Substitute Parts

Part Overview

The DMT69M8LPS-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 60V drain-to-source voltage with 10.2A continuous drain current at 25°C (Ta) and 70A at case temperature (Tc). The device is housed in a PowerDI5060-8 surface mount package and is qualified to AEC-Q101 automotive standards. This part is currently classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support and procurement continuity.

Substiute Parts

DMT69M8LPS-13
Diodes IncorporatedIn Stock: 12751DMT69M8LPS-13 Datasheet
DMT69M8LPS-13
Current Part
DMT6012LPS-13
Diodes IncorporatedIn Stock: 884DMT6012LPS-13 Datasheet
DMT6012LPS-13
MFR Recommended
FDMS3500
onsemiIn Stock: 6100FDMS3500 Datasheet
FDMS3500
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 60 V
Continuous Drain Current @ 25°C (Ta) 10.2 A
Continuous Drain Current @ Case (Tc) 70 A
On-Resistance (Rds On) @ 10V, 13.5A 12 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 2 V
Gate Charge (Qg) @ 10V 33.5 nC
Input Capacitance (Ciss) @ 30V 1925 pF
Power Dissipation @ 25°C (Ta) 2.3 W
Power Dissipation @ Case (Tc) 113 W
Operating Temperature Range -55 to 150 °C (TJ)
Package Type 8-PowerTDFN Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)
AEC-Q101 Qualification Yes

Substitute Part Grouping Explanation

Substitution of the obsolete DMT69M8LPS-13 is determined by electrical and mechanical compatibility across the following critical parameters:

Voltage Rating Compatibility: Substitute parts must support the 60V Vdss requirement of the original design. Parts with higher voltage ratings (such as 75V) are acceptable as they provide backward compatibility without exceeding design stress limits.

Current Handling Capability: Substitute parts must meet or exceed the 10.2A continuous drain current specification at 25°C ambient temperature. Case temperature (Tc) ratings provide additional thermal margin information but do not override the ambient temperature specification.

On-Resistance (Rds On): The 12 mOhm maximum on-resistance at 10V gate drive and 13.5A drain current establishes the switching loss and thermal performance baseline. Substitute parts with comparable or lower on-resistance values maintain equivalent circuit performance.

Gate Charge and Input Capacitance: These parameters affect switching speed and gate drive requirements. Substitute parts with similar or lower values ensure compatibility with existing gate drive circuits.

Package and Mounting: All substitute parts must use surface mount technology with compatible pinout and thermal characteristics. The 8-PowerTDFN package footprint is the reference standard.

Compliance and Certification: Substitute parts must maintain ROHS3 compliance and MSL 1 rating. AEC-Q101 qualification is required for automotive applications.

Parameter Comparison

Parameter DMT69M8LPS-13 (Main) DMT6012LPS-13 (Substitute) FDMS3500 (Substitute) Unit
Manufacturer Diodes Incorporated Diodes Incorporated onsemi
FET Type N-Channel N-Channel N-Channel
Drain-to-Source Voltage (Vdss) 60 60 75 V
Continuous Drain Current @ 25°C (Ta) 10.2 Not Specified 9.2 A
Continuous Drain Current @ Case (Tc) 70 Not Specified 49 A
On-Resistance (Rds On) @ 10V 12 @ 13.5A Not Specified 14.5 @ 11.5A mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 2 Not Specified 3 V
Gate Charge (Qg) @ 10V 33.5 Not Specified 91 nC
Input Capacitance (Ciss) @ Specified Vds 1925 @ 30V Not Specified 4765 @ 40V pF
Power Dissipation @ 25°C (Ta) 2.3 Not Specified 2.5 W
Power Dissipation @ Case (Tc) 113 Not Specified 96 W
Operating Temperature Range -55 to 150 Not Specified -55 to 150 °C (TJ)
Package Type 8-PowerTDFN Not Specified 8-PowerTDFN
Mounting Type Surface Mount Surface Mount Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
Product Status Obsolete Active Active

Engineering Selection Recommendations

DMT6012LPS-13 (Diodes Incorporated): This part is the manufacturer-recommended substitute from Diodes Incorporated. It maintains the same 60V voltage rating and is manufactured by the original equipment supplier. The part is currently in active production status with 855 units in stock. It carries ROHS3 compliance and MSL 1 rating identical to the main part. Detailed electrical specifications for this substitute are not provided in the available documentation; however, as the manufacturer-recommended alternative, it is engineered for direct replacement in the same application context.

FDMS3500 (onsemi): This part is an alternative substitute manufactured by onsemi under the PowerTrench® series. It features a higher 75V voltage rating, which provides additional design margin while remaining backward compatible with 60V circuit requirements. The FDMS3500 delivers 9.2A continuous drain current at 25°C, which approaches the 10.2A specification of the main part. On-resistance is specified at 14.5 mOhm at 10V gate drive, representing a 2.5 mOhm increase compared to the main part. Gate charge is significantly higher at 91 nC versus 33.5 nC, which may require gate drive circuit evaluation. The part is in active production with 6029 units in stock and maintains ROHS3 compliance and MSL 1 rating. The FDMS3500 is packaged in 8-PQFN (5x6) format, which is compatible with the 8-PowerTDFN footprint classification.

Both substitute parts are suitable for procurement as alternatives to the obsolete DMT69M8LPS-13. Selection between them depends on design-specific requirements regarding gate drive capability, on-resistance tolerance, and supplier preference.

Frequently Asked Questions (FAQ)

Q: Can the DMT6012LPS-13 be used as a direct replacement for the DMT69M8LPS-13?

A: The DMT6012LPS-13 is the manufacturer-recommended substitute from Diodes Incorporated. Both parts share the same 60V voltage rating and are designed for equivalent applications. However, complete electrical specifications for the DMT6012LPS-13 are not provided in available documentation. Verification of current ratings, on-resistance, and gate charge specifications against your circuit requirements is necessary before implementation.

Q: What are the key differences between the FDMS3500 and the original DMT69M8LPS-13?

A: The FDMS3500 has a higher 75V voltage rating (versus 60V), which is backward compatible. Continuous drain current at 25°C is 9.2A (versus 10.2A). On-resistance is 14.5 mOhm at 10V (versus 12 mOhm), representing a 2.5 mOhm increase. Gate charge is 91 nC (versus 33.5 nC), which is significantly higher and may affect gate drive circuit performance. Input capacitance is also higher at 4765 pF. These differences require circuit-level evaluation.

Q: Are the package footprints of these substitute parts compatible with the original DMT69M8LPS-13?

A: All three parts use 8-PowerTDFN surface mount packages. The DMT69M8LPS-13 and FDMS3500 are both specified as 8-PowerTDFN. The DMT6012LPS-13 package specification is not detailed in available documentation. Physical footprint compatibility should be confirmed with package drawings before PCB layout finalization.

Q: Do the substitute parts maintain the same compliance certifications as the original part?

A: Both substitute parts are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating, matching the original DMT69M8LPS-13. The original part carries AEC-Q101 automotive qualification; however, AEC-Q101 status for the substitute parts is not specified in the provided documentation. For automotive applications, AEC-Q101 qualification status should be confirmed with the respective manufacturers.

Q: What is the impact of higher gate charge in the FDMS3500 on circuit design?

A: The FDMS3500 gate charge of 91 nC is 2.7 times higher than the original part's 33.5 nC. Gate charge directly affects the energy required to switch the device and the switching speed. Higher gate charge requires either increased gate drive current or longer switching times. Existing gate drive circuits designed for the 33.5 nC specification may require modification to accommodate the FDMS3500. Gate drive circuit evaluation is necessary before substitution.

Q: Can I use the FDMS3500 in a 60V circuit design?

A: Yes. The FDMS3500 is rated for 75V maximum drain-to-source voltage. Using it in a 60V circuit operates the device well within its voltage rating and provides additional design margin. No circuit modifications are required for voltage compatibility. However, the differences in on-resistance, gate charge, and input capacitance require evaluation against your specific circuit performance requirements.

Q: What inventory status should I consider when selecting a substitute?

A: The DMT6012LPS-13 has 855 units in stock, while the FDMS3500 has 6029 units in stock. Both parts are in active production. Inventory availability may influence procurement decisions based on project timeline and volume requirements.

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