DMT6016LFDF-13 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The DMT6016LFDF-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 60V drain-to-source voltage with 8.9A continuous drain current at 25°C. This device is housed in a 6-UDFN surface mount package with exposed pad and is designed for general-purpose switching and amplification applications in power management circuits.

The part is currently in active production status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1). Substitute parts are identified based on identical electrical specifications and mechanical compatibility within the same package family, ensuring direct functional replacement without circuit redesign.

Substiute Parts

DMT6016LFDF-13
Diodes IncorporatedIn Stock: 1193DMT6016LFDF-13 Datasheet
DMT6016LFDF-13
Current Part
DMT6016LFDF-7
Diodes IncorporatedIn Stock: 4208DMT6016LFDF-7 Datasheet
DMT6016LFDF-7
Parametric Equivalent

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 8.9 A
On-State Resistance (Rds On) @ 10A, 10V 16 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 3 V
Gate Charge (Qg) @ 10V 17 nC
Input Capacitance (Ciss) @ 30V 864 pF
Power Dissipation (Max) 820 mW
Operating Temperature Range -55 to 150 °C
Package Type 6-UDFN Exposed Pad
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitute parts for the DMT6016LFDF-13 are identified through parametric equivalence across all critical electrical and mechanical specifications. The substitution logic is based on the following matching criteria:

Electrical Parameters (Must Match Exactly):

  • Drain-to-Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id) @ 25°C: 8.9A
  • On-State Resistance (Rds On) @ 10A, 10V: 16mOhm
  • Gate Threshold Voltage (Vgs(th)) @ 250µA: 3V
  • Gate Charge (Qg) @ 10V: 17nC
  • Input Capacitance (Ciss) @ 30V: 864pF
  • Power Dissipation (Max): 820mW
  • Operating Temperature Range: -55°C to 150°C

Mechanical Parameters (Must Match Exactly):

  • Package Type: 6-UDFN Exposed Pad (U-DFN2020-6 Type F)
  • Mounting Type: Surface Mount
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)

Compliance Parameters (Must Match Exactly):

  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • REACH Status: REACH Unaffected
  • Product Status: Active

Substitute parts may differ only in packaging format (tape & reel versus cut tape) without affecting electrical or mechanical performance.

Parameter Comparison

Parameter DMT6016LFDF-13 DMT6016LFDF-7 Match
Manufacturer Diodes Incorporated Diodes Incorporated
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vdss 60V 60V
Id @ 25°C 8.9A 8.9A
Rds On @ 10A, 10V 16mOhm 16mOhm
Vgs(th) @ 250µA 3V 3V
Qg @ 10V 17nC 17nC
Ciss @ 30V 864pF 864pF
Power Dissipation (Max) 820mW 820mW
Operating Temperature -55°C to 150°C -55°C to 150°C
Package Type 6-UDFN Exposed Pad 6-UDFN Exposed Pad
Mounting Type Surface Mount Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected
Product Status Active Active
Packaging Format Tape & Reel (TR) Cut Tape (CT) & Digi-Reel® Different

Engineering Selection Recommendations

The DMT6016LFDF-7 is a direct parametric equivalent to the DMT6016LFDF-13. Both parts are manufactured by Diodes Incorporated and share identical electrical specifications, mechanical dimensions, and compliance certifications.

Selection Basis:

The primary difference between these parts is packaging format. The DMT6016LFDF-13 is supplied in tape & reel format, while the DMT6016LFDF-7 is supplied in cut tape with Digi-Reel® format. This distinction affects only the delivery and handling method, not the component's electrical or mechanical performance.

Both parts maintain active production status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1). Both are REACH unaffected and carry the same ECCN and HTSUS classifications.

Selection between these parts should be based on procurement requirements and assembly line compatibility with available tape handling equipment. No circuit redesign or performance re-evaluation is required when substituting between these parts.

Frequently Asked Questions (FAQ)

Q: Can DMT6016LFDF-7 be used as a direct replacement for DMT6016LFDF-13 in existing designs?

A: Yes. Both parts are parametrically identical across all electrical specifications, gate charge characteristics, capacitance values, and thermal ratings. The 6-UDFN package footprint and pin configuration are identical. No circuit modifications are required.

Q: What is the difference between the two part numbers?

A: The difference is limited to packaging format. DMT6016LFDF-13 uses tape & reel packaging, while DMT6016LFDF-7 uses cut tape with Digi-Reel® format. The actual component specifications are identical.

Q: Are there any thermal or performance differences between these parts?

A: No. Both parts have identical power dissipation ratings (820mW), operating temperature ranges (-55°C to 150°C), and on-state resistance characteristics (16mOhm @ 10A, 10V).

Q: Do both parts meet the same compliance standards?

A: Yes. Both DMT6016LFDF-13 and DMT6016LFDF-7 are RoHS3 compliant, REACH unaffected, and carry MSL 1 (unlimited) moisture sensitivity rating. Both are in active production status.

Q: Can I mix these parts in the same assembly?

A: Yes. Since the parts are electrically and mechanically identical, they can be used interchangeably in the same circuit board assembly without any performance impact.

Q: Which part should I select for new designs?

A: Selection should be based on your assembly process requirements. If your production line uses tape & reel equipment, select DMT6016LFDF-13. If your process uses cut tape handling, select DMT6016LFDF-7. Both are equally suitable for new designs.

Q: Are the gate charge and input capacitance values identical?

A: Yes. Both parts have gate charge of 17nC @ 10V and input capacitance of 864pF @ 30V. These parameters are critical for gate drive circuit design and are identical between the two parts.

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