DMT6005LCT N-Channel 60V 100A MOSFET Equivalent & Substitute Parts

Part Overview

The DMT6005LCT is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 60V drain-to-source voltage and 100A continuous drain current in a Through Hole TO-220-3 package. This device is classified as Active product status and carries AEC-Q101 automotive qualification with ROHS3 compliance.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatible mechanical packaging and thermal characteristics. The following substitute devices meet the functional requirements for applications requiring N-Channel MOSFET performance in the 60V class with comparable current handling capabilities.

Substiute Parts

DMT6005LCT
Diodes IncorporatedIn Stock: 4197DMT6005LCT Datasheet
DMT6005LCT
Current Part
AUIRF3205Z
Infineon TechnologiesIn Stock: 58123AUIRF3205Z Datasheet
AUIRF3205Z
MFR Recommended
CSD18533KCS
Texas InstrumentsIn Stock: 5988CSD18533KCS Datasheet
CSD18533KCS
MFR Recommended
FDP070AN06A0
Fairchild SemiconductorIn Stock: 15169FDP070AN06A0 Datasheet
FDP070AN06A0
MFR Recommended
IPP060N06NAKSA1
Infineon TechnologiesIn Stock: 4299IPP060N06NAKSA1 Datasheet
IPP060N06NAKSA1
MFR Recommended
IXTP120N075T2
IXYSIn Stock: 862IXTP120N075T2 Datasheet
IXTP120N075T2
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 100 A (Tc)
Rds On (Max) @ Id, Vgs 6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 47.1 nC @ 10V
Vgs (Max) ±20 V
Input Capacitance (Ciss) (Max) @ Vds 2962 pF @ 30V
Power Dissipation (Max) 104 W (Tc)
Operating Temperature -55 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Grade Automotive
Qualification AEC-Q101
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the DMT6005LCT are selected based on the following electrical and mechanical criteria:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Equal to or greater than 60V
  • Continuous Drain Current (Id): Equal to or greater than 72A (minimum acceptable threshold for thermal class equivalence)
  • Package Type: TO-220-3 or TO-220AB (mechanically compatible)
  • FET Type: N-Channel MOSFET (Metal Oxide technology)
  • Gate Voltage (Vgs): ±20V maximum rating
  • Operating Temperature Range: Minimum -55°C to 150°C

Secondary Compatibility Parameters:

  • Rds On (Max): Comparable on-resistance characteristics at rated current and gate voltage
  • Gate Charge (Qg): Switching performance indicator
  • Input Capacitance (Ciss): Drive circuit compatibility factor
  • Power Dissipation: Thermal management capability

Substitutes are grouped into two categories: Direct Equivalents (matching or exceeding all primary parameters with Active product status) and Functional Alternatives (meeting electrical requirements with different product status or slightly modified thermal ratings).

Parameter Comparison

Parameter DMT6005LCT CSD18533KCS FDP070AN06A0 IPP060N06NAKSA1 AUIRF3205Z IXTP120N075T2
Manufacturer Diodes Inc. Texas Instruments Fairchild Semi. Infineon Tech. Infineon Tech. IXYS
Vdss (V) 60 60 60 60 55 75
Id @ 25°C (A) 100 (Tc) 100 (Tc) 80 (Tc) 45 (Tc) 75 (Tc) 120 (Tc)
Rds On (Max) (mOhm) 6 @ 20A, 10V 6.3 @ 75A, 10V 7 @ 80A, 10V 6 @ 45A, 10V 6.5 @ 66A, 10V 7.7 @ 60A, 10V
Vgs(th) (Max) (V) 3 @ 250µA 2.3 @ 250µA 4 @ 250µA 2.8 @ 36µA 4 @ 250µA 4 @ 250µA
Gate Charge (Qg) (nC) 47.1 @ 10V 34 @ 10V 66 @ 10V 27 @ 10V 110 @ 10V 78 @ 10V
Ciss (Max) (pF) 2962 @ 30V 3025 @ 30V 3000 @ 25V 2000 @ 30V 3450 @ 25V 4740 @ 25V
Power Dissipation (W) 104 (Tc) 192 (Tc) 175 (Tc) 83 (Tc) 170 (Tc) 250 (Tc)
Operating Temp (°C) -55 to 150 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175
Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220AB TO-220-3
Product Status Active Active Active Active Not For New Designs Active
RoHS Status ROHS3 Compliant ROHS3 Compliant Not Specified ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Recommended Primary Substitutes (Active Product Status):

CSD18533KCS (Texas Instruments NexFET™) provides the closest functional equivalence to the DMT6005LCT. This device matches the 60V Vdss rating and achieves 100A continuous drain current at Tc. The CSD18533KCS maintains Active product status, ROHS3 compliance, and extends the operating temperature range to 175°C. Gate charge is reduced to 34 nC, improving switching efficiency. Power dissipation capability is increased to 192W (Tc), providing superior thermal performance.

IXTP120N075T2 (IXYS TrenchT2™) offers higher voltage and current ratings (75V, 120A) with Active product status. This device is suitable for applications requiring margin above the 60V specification. The 250W (Tc) power dissipation rating provides enhanced thermal headroom. ROHS3 compliance and extended temperature range (-55°C to 175°C) are maintained.

FDP070AN06A0 (Fairchild PowerTrench®) maintains 60V Vdss rating with 80A continuous drain current (Tc). Active product status and extended operating temperature to 175°C are provided. This substitute is appropriate for applications where the 100A rating is not fully utilized and cost optimization is a consideration.

IPP060N06NAKSA1 (Infineon OptiMOS™) matches the 60V Vdss specification with 45A continuous drain current (Tc). This device features the lowest gate charge (27 nC) and input capacitance (2000 pF), making it suitable for high-frequency switching applications. Active product status and ROHS3 compliance are maintained.

Alternative Substitute (Not For New Designs):

AUIRF3205Z (Infineon HEXFET®) is listed with "Not For New Designs" product status. This device provides 55V Vdss and 75A continuous drain current. While electrically functional, this substitute should be used only for legacy system maintenance or replacement applications where design changes are not feasible.

Frequently Asked Questions (FAQ)

Q: Can the AUIRF3205Z be used as a direct replacement for the DMT6005LCT in new designs?

A: No. The AUIRF3205Z carries "Not For New Designs" product status. For new designs, select from the Active status substitutes: CSD18533KCS, IXTP120N075T2, FDP070AN06A0, or IPP060N06NAKSA1.

Q: What is the minimum continuous drain current acceptable for substitution?

A: Substitutes must achieve a minimum of 72A continuous drain current at Tc to maintain thermal equivalence with the DMT6005LCT's 100A rating. The CSD18533KCS and IXTP120N075T2 meet or exceed this threshold.

Q: Are all substitute parts mechanically compatible with the DMT6005LCT?

A: All listed substitutes use TO-220-3 or TO-220AB packaging, which are mechanically compatible. Pin configuration and lead spacing are identical, allowing direct board-level substitution without layout modifications.

Q: How does gate charge affect device selection?

A: Gate charge (Qg) determines the drive circuit requirements and switching speed. The DMT6005LCT specifies 47.1 nC. Substitutes with lower gate charge (CSD18533KCS at 34 nC, IPP060N06NAKSA1 at 27 nC) require less drive current and switch faster. Substitutes with higher gate charge (AUIRF3205Z at 110 nC, IXTP120N075T2 at 78 nC) require stronger drive circuits but are still compatible with standard gate drivers.

Q: What is the significance of the Vdss rating difference between the DMT6005LCT (60V) and IXTP120N075T2 (75V)?

A: The IXTP120N075T2's higher Vdss rating (75V) provides additional voltage margin for transient overshoot protection. This device is suitable for applications with voltage spikes or where design margin is required. The 60V-rated substitutes (CSD18533KCS, FDP070AN06A0, IPP060N06NAKSA1) are appropriate for applications with stable 60V supplies.

Q: Does operating temperature range affect substitution suitability?

A: The DMT6005LCT operates from -55°C to 150°C. All recommended substitutes extend this range to 175°C, providing additional thermal margin. This extended range does not create incompatibility; it represents an improvement in thermal performance capability.

Q: Which substitute is best for high-frequency switching applications?

A: The IPP060N06NAKSA1 features the lowest gate charge (27 nC) and input capacitance (2000 pF), making it optimal for high-frequency switching circuits. The CSD18533KCS is the second choice with 34 nC gate charge and 3025 pF input capacitance.

Q: Can substitutes with lower continuous current ratings be used?

A: The IPP060N06NAKSA1 (45A Tc) and FDP070AN06A0 (80A Tc) have lower current ratings than the DMT6005LCT (100A Tc). These devices are suitable only for applications where the actual operating current does not exceed their rated values. Thermal design must account for the reduced power dissipation capability.

Q: Are all substitutes RoHS3 compliant?

A: CSD18533KCS, IPP060N06NAKSA1, AUIRF3205Z, and IXTP120N075T2 are explicitly ROHS3 compliant. FDP070AN06A0 does not specify RoHS status in the provided data. Verify RoHS compliance with the manufacturer if this is a requirement for your application.

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