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DMT36M1LPS-13 Equivalent & Substitute Parts
Part Overview
The DMT36M1LPS-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with 65A continuous drain current at Tc. This device is housed in a PowerDI5060-8 surface mount package and is designed for high-current switching applications. The part maintains Active product status and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).
Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatibility with the application's thermal and mechanical requirements.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current @ 25°C (Tc) | 65 | A |
| RDS(on) Max @ 20A, 10V | 6 | mOhm |
| Gate Threshold Voltage @ 250µA | 3 | V |
| Gate Charge @ 10V | 16.7 | nC |
| Input Capacitance @ 15V | 1155 | pF |
| Power Dissipation Max (Ta) | 2.6 | W |
| Operating Temperature Range | -55 to 150 | °C |
| Package Type | 8-PowerTDFN | — |
| Mounting Type | Surface Mount | — |
Substitute Part Grouping Explanation
Substitution eligibility for the DMT36M1LPS-13 is determined by the following critical parameters:
Electrical Compatibility Criteria:
- Drain-to-Source Voltage (Vdss) must equal or exceed 30V
- RDS(on) characteristics must support equivalent on-state performance
- Gate threshold voltage must fall within compatible drive voltage ranges
- Operating temperature range must encompass -55°C to 150°C
Mechanical Compatibility Criteria:
- Surface mount package configuration
- Pin count and footprint compatibility with PowerDI5060-8 or equivalent power package designations
Regulatory Compliance:
- RoHS3 compliance required
- MSL 1 (Unlimited) moisture sensitivity level
- REACH Unaffected status
The identified substitute parts (FDMS7682 and PJQ5410_R2_00001) meet the voltage and temperature specifications. However, differences in continuous drain current ratings and package configurations require application-level assessment for current-handling requirements.
Parameter Comparison
| Parameter | DMT36M1LPS-13 | FDMS7682 | PJQ5410_R2_00001 | Unit |
|---|---|---|---|---|
| Manufacturer | Diodes Incorporated | onsemi | Panjit International Inc. | — |
| FET Type | N-Channel | N-Channel | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | — |
| Vdss | 30 | 30 | 30 | V |
| Continuous Drain Current @ 25°C (Tc) | 65 | 22 | 80 | A |
| RDS(on) Max @ Specified Conditions | 6 @ 20A, 10V | 6.3 @ 14A, 10V | 6 @ 20A, 10V | mOhm |
| Vgs(th) Max @ 250µA | 3 | 3 | 2.5 | V |
| Gate Charge @ Specified Vgs | 16.7 @ 10V | 30 @ 10V | 12 @ 4.5V | nC |
| Input Capacitance @ Specified Vds | 1155 @ 15V | 1885 @ 15V | 1323 @ 25V | pF |
| Power Dissipation Max (Ta) | 2.6 | 2.5 | 2 | W |
| Operating Temperature Range | -55 to 150 | -55 to 150 | -55 to 150 | °C |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerVDFN | — |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | — |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | — |
| MSL | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | — |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected | — |
Engineering Selection Recommendations
DMT36M1LPS-13 (Primary Part)
The DMT36M1LPS-13 is the specified component with Active product status. It delivers 65A continuous drain current at Tc and is optimized for high-current applications. This part is recommended for designs requiring the full 65A current rating and is currently in stock with 2706 units available.
FDMS7682 (onsemi Substitute)
The FDMS7682 is manufactured by onsemi under the PowerTrench® series and maintains Active product status. This part is rated for 22A continuous drain current at Tc, which represents a significant reduction from the primary part's 65A rating. The FDMS7682 is suitable for applications where current requirements do not exceed 22A. Gate charge is elevated at 30 nC compared to 16.7 nC for the primary part, which may impact switching frequency performance. Input capacitance is also higher at 1885 pF. This substitute is available in higher inventory (35400 units) and uses an 8-PQFN (5x6) package configuration. All regulatory compliance requirements are met.
PJQ5410_R2_00001 (Panjit International Inc. Substitute)
The PJQ5410_R2_00001 is manufactured by Panjit International Inc. and maintains Active product status. This part is rated for 80A continuous drain current at Tc, exceeding the primary part's 65A rating. The gate threshold voltage is lower at 2.5V compared to 3V for the primary part. Gate charge is reduced to 12 nC at 4.5V, which may provide switching speed advantages. The package designation is 8-PowerVDFN, which differs from the primary part's 8-PowerTDFN. All regulatory compliance requirements are met. Inventory availability is 2456 units.
Compliance Summary
All three parts maintain RoHS3 compliance, MSL 1 (Unlimited) moisture sensitivity level, and REACH Unaffected status. All parts operate across the -55°C to 150°C temperature range. Selection between these parts depends on application-specific current requirements and package footprint compatibility.
Frequently Asked Questions (FAQ)
Q: Can the FDMS7682 be used as a direct replacement for the DMT36M1LPS-13?
A: The FDMS7682 is electrically compatible at the voltage level (both rated 30V Vdss) and meets all regulatory requirements. However, the continuous drain current rating is 22A at Tc compared to 65A for the primary part. Substitution is valid only for applications where the maximum required current does not exceed 22A. Package footprint differences (8-PQFN versus 8-PowerTDFN) must also be verified for PCB compatibility.
Q: What are the key differences between the PJQ5410_R2_00001 and the DMT36M1LPS-13?
A: Both parts share the same 30V Vdss rating and -55°C to 150°C operating temperature range. The PJQ5410_R2_00001 provides higher continuous drain current at 80A (Tc) compared to 65A for the primary part. Gate threshold voltage is lower at 2.5V, and gate charge is reduced to 12 nC. The package type differs (8-PowerVDFN versus 8-PowerTDFN), requiring PCB layout verification. All regulatory compliance parameters are equivalent.
Q: How do gate charge differences affect circuit performance?
A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The primary part has 16.7 nC at 10V, while the FDMS7682 has 30 nC at 10V, and the PJQ5410_R2_00001 has 12 nC at 4.5V. Higher gate charge increases switching losses and may reduce maximum switching frequency. Lower gate charge reduces switching losses. Selection depends on the gate driver capability and target switching frequency of the application.
Q: Are all three parts RoHS3 compliant?
A: Yes. The DMT36M1LPS-13, FDMS7682, and PJQ5410_R2_00001 are all RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level and REACH Unaffected status.
Q: What is the significance of the different package designations?
A: The primary part uses 8-PowerTDFN, the FDMS7682 uses 8-PQFN (5x6), and the PJQ5410_R2_00001 uses 8-PowerVDFN. While all are surface mount 8-pin packages, the physical dimensions and pin layouts differ. PCB footprint compatibility must be verified before substitution. Consult the respective datasheets for detailed package dimensions and pin configurations.
Q: Which substitute part should be selected for a high-current application?
A: For applications requiring continuous drain current above 22A, the PJQ5410_R2_00001 is the appropriate substitute, as it is rated for 80A at Tc. For applications requiring 22A or less, the FDMS7682 is suitable. For applications requiring the full 65A rating, the primary part DMT36M1LPS-13 is recommended.
Q: How do input capacitance differences impact circuit design?
A: Input capacitance (Ciss) affects gate drive requirements and switching speed. The primary part has 1155 pF at 15V, the FDMS7682 has 1885 pF at 15V, and the PJQ5410_R2_00001 has 1323 pF at 25V. Higher input capacitance requires greater gate charge and may increase switching losses. The gate driver must be capable of supplying the required current to charge the input capacitance within the target switching time.
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