DMT34M2LPS-13 Equivalent & Substitute Parts

Part Overview

The DMT34M2LPS-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with continuous drain current of 21A at 25°C ambient temperature and 100A at case temperature. This device is housed in an 8-PowerTDFN surface mount package and is designed for power switching applications requiring low on-resistance performance. The part is Active in product status and RoHS3 compliant.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained across critical parameters including voltage rating, continuous drain current, on-resistance characteristics, gate charge, and surface mount packaging specifications.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	21	A
Continuous Drain Current @ Case (Tc)	100	A
On-Resistance (Rds On Max) @ 20A, 10V	3.2	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3	V
Gate Charge (Qg) @ 10V	39	nC
Input Capacitance (Ciss) @ 15V	2242	pF
Power Dissipation (Ta)	2.2	W
Package Type	8-PowerTDFN	Surface Mount
FET Type	N-Channel	MOSFET
RoHS Status	ROHS3 Compliant	Certification

Substitute Part Grouping Explanation

Substitution eligibility for the DMT34M2LPS-13 is determined by the following critical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a Drain-to-Source Voltage (Vdss) rating of 30V to ensure safe operation within the same circuit voltage envelope.

Continuous Drain Current: Substitute parts must support continuous drain current specifications that meet or exceed the 21A rating at 25°C ambient temperature. Higher current ratings at case temperature (Tc) provide thermal margin but do not disqualify a part.

On-Resistance (Rds On): The maximum on-resistance specification determines power dissipation and thermal performance. Substitute parts with equal or lower Rds On values maintain equivalent or improved electrical efficiency.

Gate Charge and Input Capacitance: These parameters affect switching speed and gate drive requirements. Substitute parts with comparable or lower values ensure compatible gate driver performance.

Package and Mounting: All substitute parts must be surface mount devices in compatible power package formats (8-PowerTDFN or equivalent 8-pin power packages) to maintain PCB layout compatibility.

Compliance and Status: All substitute parts must be Active in product status and RoHS3 compliant to ensure long-term availability and regulatory alignment.

Parameter Comparison

Parameter	DMT34M2LPS-13 (Diodes)	BSZ0904NSIATMA1 (Infineon)	CSD17581Q3AT (Texas Instruments)
Manufacturer	Diodes Incorporated	Infineon Technologies	Texas Instruments
Vdss Rating	30V	30V	30V
Continuous Drain Current (Ta)	21A	18A	Not specified at Ta
Continuous Drain Current (Tc)	100A	40A	60A
Rds On (Max) @ 10V	3.2 mOhm @ 20A	4 mOhm @ 30A	3.8 mOhm @ 16A
Vgs(th) (Max) @ 250µA	3V	2V	1.7V
Gate Charge (Qg) @ Vgs	39 nC @ 10V	11 nC @ 4.5V	54 nC @ 10V
Input Capacitance (Ciss) @ 15V	2242 pF	1463 pF	3640 pF
Power Dissipation (Ta)	2.2W	2.1W	2.8W
Package	8-PowerTDFN	8-PowerTDFN	8-PowerVDFN
FET Type	N-Channel MOSFET	N-Channel MOSFET	N-Channel MOSFET
Product Status	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

BSZ0904NSIATMA1 (Infineon OptiMOS™ Series)

This substitute is suitable for applications where the 21A continuous current requirement at 25°C can be met by the 18A rating, provided thermal management ensures case temperature operation. The lower gate charge (11 nC) and input capacitance (1463 pF) offer improved switching characteristics compared to the main part. The integrated Schottky diode feature provides additional circuit protection. All compliance certifications (ROHS3, REACH Unaffected) align with the main part. Package compatibility is maintained with the 8-PowerTDFN format.

CSD17581Q3AT (Texas Instruments NexFET™ Series)

This substitute provides superior continuous drain current performance at case temperature (60A) and maintains equivalent on-resistance characteristics (3.8 mOhm). The lower gate threshold voltage (1.7V) enables faster switching response. Higher gate charge (54 nC) and input capacitance (3640 pF) require gate driver verification for compatibility. The 8-PowerVDFN package is mechanically compatible with 8-PowerTDFN footprints in most applications. All compliance certifications match the main part requirements.

Both substitute parts maintain Active product status and full RoHS3 compliance, ensuring regulatory alignment and long-term supply availability.

Frequently Asked Questions (FAQ)

Q: Can the BSZ0904NSIATMA1 be used as a direct replacement for the DMT34M2LPS-13?

A: The BSZ0904NSIATMA1 is electrically compatible when the application operates within its 18A continuous current rating at 25°C ambient temperature. The 8-PowerTDFN package provides direct PCB footprint compatibility. Verify that thermal management in your application supports the lower current rating.

Q: What is the primary difference between the CSD17581Q3AT and the DMT34M2LPS-13?

A: The CSD17581Q3AT offers higher continuous drain current at case temperature (60A versus 100A) and lower gate threshold voltage (1.7V versus 3V), resulting in faster switching. The 8-PowerVDFN package is mechanically compatible but has different pin spacing. Gate driver circuits must accommodate the higher gate charge (54 nC).

Q: Are all three parts pin-compatible?

A: The DMT34M2LPS-13 and BSZ0904NSIATMA1 share the 8-PowerTDFN package with identical pin configurations. The CSD17581Q3AT uses the 8-PowerVDFN package, which has the same pin count but different physical dimensions. PCB layout verification is required before substitution.

Q: Do the substitute parts have the same moisture sensitivity level?

A: Yes. All three parts carry MSL 1 (Unlimited) rating, indicating no moisture sensitivity restrictions during storage and handling.

Q: Which substitute part has lower on-resistance?

A: The DMT34M2LPS-13 has the lowest on-resistance at 3.2 mOhm (measured at 20A, 10V). The CSD17581Q3AT measures 3.8 mOhm at 16A, and the BSZ0904NSIATMA1 measures 4 mOhm at 30A. Lower on-resistance reduces power dissipation in switching applications.

Q: Can I use the BSZ0904NSIATMA1 in a high-temperature application?

A: The BSZ0904NSIATMA1 operates across -55°C to 150°C junction temperature range, matching the thermal operating window of comparable devices. Verify that your thermal management design maintains junction temperature within this range under maximum power dissipation conditions.

Q: What is the significance of the Schottky diode feature in the BSZ0904NSIATMA1?

A: The integrated Schottky diode (body diode) provides inherent reverse current protection and faster recovery compared to standard MOSFET body diodes. This feature improves performance in switching applications with inductive loads.

Q: Are all substitute parts available in the same packaging format?

A: The DMT34M2LPS-13 and BSZ0904NSIATMA1 use 8-PowerTDFN packaging. The CSD17581Q3AT uses 8-PowerVDFN packaging. Both are 8-pin power packages suitable for surface mount assembly, but PCB footprint verification is required before design implementation.

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