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DMT3008LFDF-7 Equivalent & Substitute Parts
Part Overview
The DMT3008LFDF-7 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with 12A continuous drain current at 25°C. This device is housed in a 6-UDFN surface mount package with exposed pad and is designed for general-purpose switching applications requiring moderate current handling and low on-resistance characteristics. The part maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).
Equivalent and substitute parts are identified to address inventory availability, supply chain continuity, or specific application requirements where parametric compatibility permits direct replacement within the same electrical and mechanical constraints.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current (Id) @ 25°C | 12 | A |
| On-Resistance (Rds On Max) @ 9A, 10V | 10 | mOhm |
| Gate Threshold Voltage (Vgs(th) Max) @ 250µA | 3 | V |
| Gate Charge (Qg Max) @ 10V | 14 | nC |
| Power Dissipation (Max) | 800 | mW |
| Operating Temperature Range | -55 to 150 | °C |
| Package Type | 6-UDFN Exposed Pad | — |
| Mounting Type | Surface Mount | — |
Substitute Part Grouping Explanation
Substitute parts for the DMT3008LFDF-7 are classified into two categories based on parametric equivalence and manufacturer recommendation status.
Parametric Equivalent (Same Manufacturer): The DMT3008LFDF-13 is a direct parametric equivalent manufactured by Diodes Incorporated. This part shares identical electrical specifications including 30V Vdss, 12A continuous drain current, 10mOhm Rds On, 14nC gate charge, and 800mW power dissipation. Both devices use the same U-DFN2020-6 (Type F) package and operate across the identical temperature range (-55°C to 150°C). The substitution is based on matching all critical parameters that define device functionality and thermal performance.
Manufacturer Recommended Alternatives (Cross-Manufacturer): The PMPB11EN,115 and PMPB13XNE,115 from Nexperia USA Inc. are manufacturer-recommended substitutes. These parts maintain the same 30V Vdss rating and surface mount DFN2020MD-6 package configuration. However, they exhibit reduced continuous drain current ratings (9A and 8A respectively) and different on-resistance characteristics. These substitutes are suitable only when application current requirements do not exceed the lower current ratings and when the modified electrical parameters remain within system design margins.
Key Parameters Determining Substitution Eligibility:
- Drain-to-Source Voltage (Vdss): 30V (all parts)
- Package Type: 6-UDFN Exposed Pad (all parts)
- Mounting Type: Surface Mount (all parts)
- Operating Temperature Range: -55°C to 150°C (all parts)
- RoHS3 Compliance: All parts compliant
- MSL Rating: 1 (Unlimited) for all parts
Parameter Comparison
| Parameter | DMT3008LFDF-7 | DMT3008LFDF-13 | PMPB11EN,115 | PMPB13XNE,115 |
|---|---|---|---|---|
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Nexperia USA Inc. | Nexperia USA Inc. |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vdss (Drain-to-Source Voltage) | 30V | 30V | 30V | 30V |
| Id (Continuous Drain Current) @ 25°C | 12A | 12A | 9A | 8A |
| Rds On (Max) @ Specified Conditions | 10mOhm @ 9A, 10V | 10mOhm @ 9A, 10V | 14.5mOhm @ 9A, 10V | 16mOhm @ 8A, 4.5V |
| Vgs(th) (Gate Threshold Voltage Max) @ 250µA | 3V | 3V | 2V | 900mV |
| Qg (Gate Charge Max) @ Specified Vgs | 14nC @ 10V | 14nC @ 10V | 20.6nC @ 10V | 36nC @ 4.5V |
| Vgs (Max Gate Voltage) | ±20V | ±20V | ±20V | ±12V |
| Ciss (Input Capacitance Max) @ Specified Vds | 886pF @ 15V | 886pF @ 15V | 840pF @ 10V | 2195pF @ 15V |
| Power Dissipation (Max) | 800mW (Ta) | 800mW (Ta) | 1.7W (Ta), 12.5W (Tc) | 1.7W (Ta), 12.5W (Tc) |
| Operating Temperature Range | -55°C to 150°C | -55°C to 150°C | -55°C to 150°C | -55°C to 150°C |
| Package / Case | 6-UDFN Exposed Pad | 6-UDFN Exposed Pad | 6-UDFN Exposed Pad | 6-UDFN Exposed Pad |
| Supplier Device Package | U-DFN2020-6 (Type F) | U-DFN2020-6 (Type F) | DFN2020MD-6 | DFN2020MD-6 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| MSL (Moisture Sensitivity Level) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected | REACH Unaffected |
| Product Status | Active | Active | Active | Active |
Engineering Selection Recommendations
DMT3008LFDF-13 (Diodes Incorporated): This part is the primary equivalent substitute for the DMT3008LFDF-7. All electrical parameters, thermal specifications, and package configurations are identical. Both parts maintain Active product status with full RoHS3 compliance and REACH unaffected designation. Selection of DMT3008LFDF-13 is appropriate for direct replacement in applications where the original DMT3008LFDF-7 is specified, with no circuit redesign or thermal re-evaluation required.
PMPB11EN,115 (Nexperia USA Inc.): This substitute is suitable for applications where continuous drain current requirements do not exceed 9A. The part maintains 30V Vdss rating and identical operating temperature range. The higher on-resistance (14.5mOhm versus 10mOhm) and increased gate charge (20.6nC versus 14nC) require verification that power dissipation and switching speed remain within system design specifications. This part is Active with full RoHS3 compliance and REACH unaffected status.
PMPB13XNE,115 (Nexperia USA Inc.): This substitute is applicable only for applications with continuous drain current requirements of 8A or less. The significantly higher input capacitance (2195pF versus 886pF), increased gate charge (36nC versus 14nC), and reduced maximum gate voltage (±12V versus ±20V) require circuit-level evaluation. The higher on-resistance (16mOhm) and modified drive voltage characteristics necessitate confirmation of gate driver compatibility and switching performance. This part is Active with full RoHS3 compliance and REACH unaffected status.
All substitute parts maintain compliance with regulatory requirements and environmental standards equivalent to the primary device.
Frequently Asked Questions (FAQ)
Q: Can DMT3008LFDF-13 be used as a direct replacement for DMT3008LFDF-7?
A: Yes. The DMT3008LFDF-13 is a parametric equivalent with identical electrical specifications, package configuration, and thermal characteristics. No circuit modifications or re-evaluation is required for direct substitution.
Q: What are the current limitations when using PMPB11EN,115 as a substitute?
A: The PMPB11EN,115 is rated for 9A continuous drain current at 25°C, compared to 12A for the DMT3008LFDF-7. Applications requiring current above 9A cannot use this substitute without circuit redesign or thermal management modifications.
Q: Are the Nexperia parts (PMPB11EN,115 and PMPB13XNE,115) pin-compatible with the Diodes Incorporated parts?
A: Both Nexperia parts use the 6-UDFN Exposed Pad package, which is mechanically compatible with the DMT3008LFDF-7 package. However, the supplier device packages differ (DFN2020MD-6 versus U-DFN2020-6 Type F). Physical footprint compatibility should be verified with package datasheets before PCB layout finalization.
Q: What is the impact of higher on-resistance in the Nexperia substitutes?
A: The PMPB11EN,115 exhibits 14.5mOhm on-resistance (versus 10mOhm) and PMPB13XNE,115 exhibits 16mOhm on-resistance. Higher on-resistance increases power dissipation at the same current level. Applications operating near thermal limits require recalculation of junction temperature and verification that thermal design remains adequate.
Q: Can PMPB13XNE,115 be used in circuits designed for ±20V gate voltage operation?
A: No. The PMPB13XNE,115 is rated for maximum gate voltage of ±12V, compared to ±20V for the DMT3008LFDF-7. Circuits applying gate voltages exceeding ±12V cannot use this substitute without gate drive circuit modification.
Q: How do the gate charge differences affect switching performance?
A: The DMT3008LFDF-7 and DMT3008LFDF-13 both have 14nC gate charge at 10V. The PMPB11EN,115 has 20.6nC at 10V, and PMPB13XNE,115 has 36nC at 4.5V. Higher gate charge increases gate drive current requirements and switching transition time. Gate driver capability must be verified for Nexperia substitutes, particularly PMPB13XNE,115.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All listed substitute parts (DMT3008LFDF-13, PMPB11EN,115, and PMPB13XNE,115) are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating and REACH unaffected status, matching the compliance profile of the primary DMT3008LFDF-7 device.
Q: What is the difference between the U-DFN2020-6 (Type F) and DFN2020MD-6 packages?
A: Both are 6-pin UDFN packages with exposed pad in similar physical dimensions. The U-DFN2020-6 (Type F) is the Diodes Incorporated package designation, while DFN2020MD-6 is the Nexperia designation. Mechanical compatibility exists, but detailed package drawings should be reviewed to confirm PCB footprint alignment and thermal pad specifications.
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