DMT10H015SPS-13 Equivalent & Substitute Parts

Part Overview

The DMT10H015SPS-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 100V drain-to-source voltage with continuous drain current of 7.3A at Ta and 44A at Tc. This device is housed in a PowerDI5060-8 surface mount package and is designed for power switching applications requiring efficient thermal management. The part is currently in active production status with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained across alternative manufacturers while preserving the core functional requirements of the application circuit.

Substiute Parts

DMT10H015SPS-13

Diodes IncorporatedIn Stock: 1252DMT10H015SPS-13 Datasheet

Current PartRFQ

BSZ146N10LS5ATMA1

Infineon TechnologiesIn Stock: 20496BSZ146N10LS5ATMA1 Datasheet

MFR RecommendedRFQ

FDMS86183

onsemiIn Stock: 10138FDMS86183 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the DMT10H015SPS-13 is determined by the following critical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss) must equal or exceed 100V
• Continuous drain current capability must support the application requirements
• On-resistance (Rds On) must not exceed the thermal and efficiency constraints of the circuit
• Gate threshold voltage and gate charge characteristics must be compatible with the drive circuit
• Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

• Package type must be 8-PowerTDFN or equivalent footprint
• Surface mount mounting type required
• Pin configuration must match or be compatible with existing PCB layout

Compliance Criteria:

• RoHS3 compliance required
• MSL 1 (Unlimited) moisture sensitivity level
• REACH Unaffected status

The substitute parts listed below meet all electrical, mechanical, and compliance requirements while maintaining functional equivalence within the specified parameter ranges.

Parameter Comparison

Engineering Selection Recommendations

All three devices listed—DMT10H015SPS-13, BSZ146N10LS5ATMA1, and FDMS86183—are active production components with full RoHS3 compliance and MSL 1 rating. Each part meets the 100V Vdss requirement and operates across the -55°C to 150°C temperature range.

DMT10H015SPS-13 (Primary Part): Diodes Incorporated manufacture with 44A continuous drain current capability and 16mOhm on-resistance. Suitable for applications requiring the specified thermal and electrical performance envelope.

BSZ146N10LS5ATMA1 (Infineon OptiMOS™ 5): Provides 40A continuous drain current with improved on-resistance of 14.6mOhm and significantly reduced gate charge (3.2nC). Lower input capacitance (1300pF) and gate charge characteristics result in reduced switching losses and improved drive circuit efficiency. Suitable for applications prioritizing switching speed and gate drive efficiency.

FDMS86183 (onsemi PowerTrench®): Delivers highest continuous drain current at 51A with lowest on-resistance of 12.8mOhm. Highest power dissipation capability at 63W. Suitable for applications requiring maximum current handling and thermal performance.

All substitute parts maintain 8-PowerTDFN package compatibility and surface mount mounting requirements. Selection between alternatives depends on specific application requirements for current capacity, on-resistance, switching characteristics, and thermal management.

Frequently Asked Questions (FAQ)

Q: Can BSZ146N10LS5ATMA1 be used as a direct replacement for DMT10H015SPS-13?

A: Yes. Both devices share identical 100V Vdss rating, 8-PowerTDFN package type, and surface mount configuration. The BSZ146N10LS5ATMA1 provides 40A continuous drain current (versus 44A) with superior on-resistance (14.6mOhm versus 16mOhm) and significantly lower gate charge (3.2nC versus 33.3nC). PCB layout and footprint compatibility is maintained.

Q: What are the key differences between the three substitute options?

A: The primary differences are continuous drain current capacity, on-resistance, and gate charge characteristics. BSZ146N10LS5ATMA1 emphasizes switching efficiency with minimal gate charge. FDMS86183 prioritizes current capacity and thermal performance with 51A rating and 12.8mOhm on-resistance. DMT10H015SPS-13 provides balanced performance at 44A with 16mOhm on-resistance.

Q: Are all three parts RoHS3 compliant?

A: Yes. DMT10H015SPS-13, BSZ146N10LS5ATMA1, and FDMS86183 are all ROHS3 Compliant with MSL 1 (Unlimited) moisture sensitivity rating and REACH Unaffected status.

Q: Do the substitute parts require PCB layout modifications?

A: No. All three devices use the 8-PowerTDFN package type with identical surface mount configuration, ensuring footprint compatibility without PCB redesign.

Q: Which substitute part is recommended for high-frequency switching applications?

A: BSZ146N10LS5ATMA1 is optimized for high-frequency operation due to its significantly reduced gate charge (3.2nC) and lower input capacitance (1300pF), resulting in faster switching transitions and reduced gate drive power requirements.

Q: Which substitute part is recommended for maximum current handling?

A: FDMS86183 provides the highest continuous drain current at 51A with the lowest on-resistance at 12.8mOhm, making it suitable for applications requiring maximum current capacity and thermal performance.

Q: Are the operating temperature ranges identical across all three parts?

A: Yes. All three devices operate across -55°C to 150°C junction temperature range, ensuring thermal compatibility across the full application operating envelope.