DMS3019SSD-13 Equivalent & Substitute Parts

Part Overview

The DMS3019SSD-13 is a dual N-channel MOSFET array manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with continuous drain currents of 7A and 5.7A. The device features logic level gate operation and is housed in an 8-SOIC surface mount package. This part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design requirements and production continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	7A, 5.7A	A
Rds On (Max) @ Id, Vgs	15mOhm @ 9A, 10V	mOhm
Vgs(th) (Max) @ Id	2.4V @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V	nC
Input Capacitance (Ciss) (Max) @ Vds	1932pF @ 15V	pF
Power - Max	1.19	W
Operating Temperature Range	-55 to 150	°C (TJ)
Configuration	2 N-Channel (Dual)	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
Mounting Type	Surface Mount	—
FET Feature	Logic Level Gate	—

Substitute Part Grouping Explanation

Substitution of the DMS3019SSD-13 is determined by strict alignment of electrical and mechanical parameters. The following criteria establish functional equivalence:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 30V
Configuration: Must be dual N-channel (2 N-Channel)
Package: Must be 8-SOIC surface mount with 0.154" (3.90mm) width
FET Feature: Must support logic level gate operation
Operating Temperature Range: Must span -55°C to 150°C (TJ)
Continuous Drain Current (Id): Must support minimum 5.7A at 25°C

Secondary Compatibility Parameters:

Rds On (Max): Lower or equivalent values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Lower values improve switching speed
Power Dissipation: Must not exceed application thermal constraints

Both identified substitutes meet the primary criteria and are electrically compatible with the DMS3019SSD-13 in applications requiring dual N-channel 30V MOSFETs in 8-SOIC packaging.

Parameter Comparison

Parameter	DMS3019SSD-13 (Diodes)	FDS6986AS (Fairchild)	IRF7904TRPBF (Infineon)
Manufacturer	Diodes Incorporated	Fairchild Semiconductor	Infineon Technologies
Product Status	Obsolete	Active	Not For New Designs
Drain to Source Voltage (Vdss)	30V	30V	30V
Continuous Drain Current (Id) @ 25°C	7A, 5.7A	6.5A, 7.9A	7.6A, 11A
Rds On (Max) @ Id, Vgs	15mOhm @ 9A, 10V	29mOhm @ 6.5A, 10V	16.2mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA	3V @ 250µA	2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V	17nC @ 10V	11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1932pF @ 15V	720pF @ 10V	910pF @ 15V
Power - Max	1.19W	900mW	1.4W, 2W
Operating Temperature Range	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)
Configuration	2 N-Channel (Dual)	2 N-Channel (Dual)	2 N-Channel (Half Bridge)
FET Feature	Logic Level Gate	Logic Level Gate	Logic Level Gate
Package / Case	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
RoHS Status	ROHS3 Compliant	Not specified	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Not specified	1 (Unlimited)

Engineering Selection Recommendations

FDS6986AS (Fairchild Semiconductor)

The FDS6986AS is an active product offering direct functional substitution for the obsolete DMS3019SSD-13. Both devices share identical voltage ratings (30V Vdss), dual N-channel configuration, logic level gate operation, and 8-SOIC packaging. The FDS6986AS demonstrates lower gate charge (17nC vs. 42nC) and reduced input capacitance (720pF vs. 1932pF), resulting in improved switching performance. Continuous drain current ratings (6.5A, 7.9A) meet or exceed the DMS3019SSD-13 specification. The higher Rds On value (29mOhm vs. 15mOhm) represents a trade-off in conduction losses. This part is suitable for new production and ongoing designs requiring dual N-channel 30V MOSFETs.

IRF7904TRPBF (Infineon Technologies)

The IRF7904TRPBF provides electrical compatibility with the DMS3019SSD-13 across all primary substitution criteria: 30V Vdss, dual N-channel configuration, logic level gate operation, and 8-SOIC packaging. The device offers superior continuous drain current ratings (7.6A, 11A) and lower gate charge (11nC) compared to the DMS3019SSD-13. Operating temperature range and RoHS3 compliance align with the original part. The product status is classified as "Not For New Designs," indicating this part is suitable for replacement and legacy system support but not recommended for new development initiatives. The IRF7904TRPBF is available in Tape & Reel packaging, matching the DMS3019SSD-13 format.

Product Status Consideration

The DMS3019SSD-13 is obsolete. The FDS6986AS is the preferred substitute for active production and new designs due to its active product status. The IRF7904TRPBF is suitable for replacement applications and legacy system continuity where new design constraints do not apply.

Frequently Asked Questions (FAQ)

Q: Can the FDS6986AS directly replace the DMS3019SSD-13 in existing designs?

A: Yes. Both devices share identical voltage ratings (30V), dual N-channel configuration, logic level gate operation, and 8-SOIC packaging. Electrical parameters are compatible within application thermal and current requirements. The FDS6986AS exhibits lower gate charge and input capacitance, which may improve switching performance in existing circuits.

Q: What is the primary difference between the FDS6986AS and IRF7904TRPBF substitutes?

A: The FDS6986AS is an active product suitable for new designs, while the IRF7904TRPBF is classified as "Not For New Designs." Both meet electrical substitution criteria. The IRF7904TRPBF offers higher continuous drain current ratings (7.6A, 11A vs. 6.5A, 7.9A) and lower gate charge (11nC vs. 17nC). Selection depends on product lifecycle requirements and application current demands.

Q: Are package dimensions identical across all three parts?

A: Yes. The DMS3019SSD-13, FDS6986AS, and IRF7904TRPBF all use 8-SOIC packaging with 0.154" (3.90mm) width. Surface mount footprints are mechanically compatible, allowing direct PCB layout substitution without redesign.

Q: Does the higher Rds On value of the FDS6986AS affect circuit performance?

A: The FDS6986AS exhibits 29mOhm Rds On compared to 15mOhm for the DMS3019SSD-13. This results in increased conduction losses and heat dissipation. Applications with high continuous current or stringent thermal budgets must evaluate power dissipation impact. The IRF7904TRPBF offers 16.2mOhm Rds On, providing a middle-ground option.

Q: Are all three parts RoHS3 compliant?

A: The DMS3019SSD-13 and IRF7904TRPBF are explicitly ROHS3 compliant. RoHS status for the FDS6986AS is not specified in the provided data. Compliance verification with the component supplier is required for applications with RoHS requirements.

Q: What is the significance of the "Logic Level Gate" feature?

A: Logic level gate operation indicates the MOSFET can be fully switched by standard logic voltage levels (typically 3.3V or 5V), eliminating the need for gate drive circuits. All three parts support this feature, ensuring compatibility with microcontroller and digital logic interfaces.

Q: Can the IRF7904TRPBF be used in new product designs?

A: The IRF7904TRPBF is classified as "Not For New Designs" by Infineon. While electrically compatible, this designation indicates the manufacturer does not recommend this part for new development. The FDS6986AS is the preferred choice for new designs due to its active product status.

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