DMS3017SSD-13 Equivalent & Substitute Parts

Part Overview

The DMS3017SSD-13 is a dual N-channel MOSFET array manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with continuous drain currents of 8A and 6A. This component features logic level gate operation and is housed in an 8-SOIC surface mount package. The part is classified as obsolete, necessitating identification of active equivalent alternatives that maintain electrical and mechanical compatibility for ongoing production and repair applications.

Substiute Parts

DMS3017SSD-13

Diodes IncorporatedIn Stock: 2285DMS3017SSD-13 Datasheet

Current PartRFQ

AO4832

Alpha & Omega Semiconductor Inc.In Stock: 24725AO4832 Datasheet

MFR RecommendedRFQ

IRF7907TRPBF

Infineon TechnologiesIn Stock: 47917IRF7907TRPBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the DMS3017SSD-13 are selected based on strict electrical and mechanical compatibility criteria. The following parameters define acceptable substitution:

Mandatory Matching Parameters:

• Drain to Source Voltage (Vdss): 30V minimum
• Configuration: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Operating Temperature Range: -55°C to 150°C (TJ)
• RoHS Status: ROHS3 Compliant
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

Electrical Performance Criteria: Substitute parts must maintain or exceed the continuous drain current capability and operate within the specified gate threshold voltage range. Rds On values, gate charge, and input capacitance may vary within acceptable limits for the application, provided the part does not introduce performance degradation in the target circuit.

Both identified substitutes meet these criteria and are classified as active products with current manufacturing status.

Parameter Comparison

Engineering Selection Recommendations

AO4832 (Alpha & Omega Semiconductor Inc.)

The AO4832 is an active product offering improved current handling at 10A continuous drain current, exceeding the DMS3017SSD-13 specification. This part maintains identical gate threshold voltage (2.5V @ 250µA) and operates within the same temperature range. The AO4832 is ROHS3 compliant with MSL 1 rating, ensuring compatibility with modern manufacturing and storage requirements. Higher maximum power dissipation (2W versus 1.19W) provides additional thermal margin in applications.

IRF7907TRPBF (Infineon Technologies)

The IRF7907TRPBF is an active product from Infineon's HEXFET® series, rated for 9.1A and 11A continuous drain currents. This part demonstrates lower gate charge (10nC @ 4.5V) and reduced input capacitance (850pF @ 15V) compared to the original DMS3017SSD-13, resulting in faster switching characteristics. The IRF7907TRPBF maintains full compliance with ROHS3 and MSL 1 specifications. Gate threshold voltage is slightly lower at 2.35V @ 25µA, remaining within acceptable logic level operation parameters.

Both substitutes are suitable for direct replacement in applications where the DMS3017SSD-13 is no longer available. Selection between these alternatives depends on specific circuit requirements regarding current capacity, switching speed, and thermal performance.

Frequently Asked Questions (FAQ)

Q: Can the AO4832 or IRF7907TRPBF be used as direct replacements for the DMS3017SSD-13?

A: Both parts are direct pin-compatible replacements. All three devices share identical 8-SOIC package dimensions, dual N-channel configuration, and logic level gate operation. Electrical parameters remain within compatible ranges for standard applications.

Q: What are the key differences between the AO4832 and IRF7907TRPBF?

A: The AO4832 offers higher continuous drain current (10A) and lower on-resistance (13mOhm @ 10A, 10V). The IRF7907TRPBF provides lower gate charge (10nC @ 4.5V) and reduced input capacitance (850pF @ 15V), enabling faster switching performance. Both maintain 30V Vdss rating and identical temperature operating range.

Q: Are there any packaging differences between these substitutes?

A: All three parts use 8-SOIC surface mount packages with identical 0.154" (3.90mm) width. The DMS3017SSD-13 is supplied in standard 8-SO packaging, while AO4832 is available in Tape & Reel format and IRF7907TRPBF in Cut Tape & Digi-Reel® format. These packaging variations do not affect electrical compatibility or PCB mounting.

Q: Do these substitutes meet current compliance requirements?

A: All three parts are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity ratings. The AO4832 and IRF7907TRPBF are active products with current manufacturing support, ensuring long-term availability and compliance with evolving regulatory standards.

Q: How do gate charge differences affect circuit performance?

A: The IRF7907TRPBF exhibits significantly lower gate charge (10nC @ 4.5V) compared to the DMS3017SSD-13 (30.6nC @ 10V), resulting in reduced gate drive requirements and faster switching transitions. The AO4832 provides intermediate gate charge (17nC @ 10V). Lower gate charge reduces power dissipation in gate drive circuits and enables higher switching frequencies.

Q: What is the significance of input capacitance variation?

A: Input capacitance (Ciss) affects gate drive circuit design and switching speed. The IRF7907TRPBF (850pF @ 15V) and AO4832 (910pF @ 15V) both exhibit lower input capacitance than the DMS3017SSD-13 (1276pF @ 15V), enabling faster response to gate drive signals and reduced switching losses in high-frequency applications.

Q: Are there thermal performance considerations when substituting these parts?

A: The AO4832 and IRF7907TRPBF both support maximum power dissipation of 2W, compared to 1.19W for the DMS3017SSD-13. This increased thermal capability provides additional margin in power-limited applications. All three parts operate across the identical temperature range (-55°C to 150°C TJ), ensuring thermal compatibility in target systems.