DMS3016SSSA-13 Equivalent & Substitute Parts

Part Overview

The DMS3016SSSA-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with 9.8A continuous drain current at 25°C. This device features a Schottky diode body and is housed in an 8-SO surface mount package. The part is classified as obsolete, making equivalent and substitute parts necessary for ongoing production and design continuity. Substitutes must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and mechanical packaging to ensure direct replacement capability.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	9.8	A
Rds On (Max) @ Id, Vgs	13	mOhm @ 9.8A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	2.3	V @ 250µA
Gate Charge (Qg) @ Vgs	43	nC @ 10V
Power Dissipation (Max)	1.54	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-SOIC (0.154", 3.90mm Width)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the DMS3016SSSA-13 is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain-to-Source Voltage (Vdss) must equal or exceed 30V
Continuous Drain Current (Id) must meet or exceed 9.8A at 25°C
On-state resistance (Rds On) must not significantly exceed 13mOhm to maintain thermal performance
Gate threshold voltage (Vgs(th)) must be compatible with 10V drive voltage
Operating temperature range must span -55°C to 150°C

Mechanical Compatibility Requirements:

Package must be 8-SOIC (0.154", 3.90mm Width) for PCB footprint compatibility
Mounting type must be Surface Mount
Pin configuration must match 8-SO standard

Regulatory & Environmental Requirements:

RoHS3 compliance required
Moisture Sensitivity Level (MSL) of 1 (Unlimited) preferred
REACH Unaffected status preferred

Substitute parts are grouped into two categories: parametric equivalents (matching all electrical specifications within tolerance) and manufacturer-recommended alternatives (meeting or exceeding electrical performance with enhanced features or improved availability).

Parameter Comparison

Parameter	DMS3016SSSA-13	DMS3016SSS-13	AO4468	FDS6690A	FDS8878	SI4890DY-T1-E3
Manufacturer	Diodes Inc.	Diodes Inc.	Alpha & Omega	onsemi	Fairchild	Vishay
Vdss (V)	30	30	30	30	30	30
Id @ 25°C (A)	9.8	9.8	10.5	11	10.2	11
Rds On (Max) (mOhm)	13 @ 9.8A, 10V	13 @ 9.8A, 10V	14 @ 11.6A, 10V	12.5 @ 11A, 10V	14 @ 10.2A, 10V	12 @ 11A, 10V
Vgs(th) (V)	2.3 @ 250µA	2.3 @ 250µA	3 @ 250µA	3 @ 250µA	2.5 @ 250µA	0.8 @ 250µA (Min)
Gate Charge (nC)	43 @ 10V	43 @ 10V	24 @ 10V	16 @ 5V	26 @ 10V	20 @ 5V
Power Dissipation (W)	1.54	1.54	3.1	2.5	2.5	2.5
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Product Status	Obsolete	Obsolete	Not For New Designs	Active	Active	Last Time Buy
RoHS3 Compliant	Yes	Yes	Yes	Yes	Not specified	Yes

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

The DMS3016SSS-13 from Diodes Incorporated is a parametric equivalent to the DMS3016SSSA-13, matching all electrical specifications and operating characteristics. Both parts are obsolete, but the DMS3016SSS-13 maintains higher inventory availability (8,169 units versus 5,770 units). This part is suitable for direct substitution in existing designs without circuit modification.

Manufacturer-Recommended Alternatives (Enhanced Performance):

For new designs or when inventory of obsolete parts is depleted, the following active or available alternatives are recommended based on product status and regulatory compliance:

FDS6690A (onsemi) — Active product status with highest inventory availability (39,900 units). This PowerTrench® series MOSFET exceeds the DMS3016SSSA-13 in continuous drain current (11A versus 9.8A) and offers improved on-state resistance (12.5mOhm versus 13mOhm). Gate charge is reduced to 16nC at 5V, improving switching efficiency. RoHS3 compliant with REACH Unaffected status. Recommended for new production designs.

FDS8878 (Fairchild Semiconductor) — Active product status with strong inventory (32,800 units). PowerTrench® series device rated for 10.2A continuous drain current with 14mOhm on-state resistance. Gate charge of 26nC at 10V and reduced input capacitance (897pF) provide improved switching characteristics. Suitable for applications requiring active product support.

SI4890DY-T1-E3 (Vishay Siliconix) — Last Time Buy status with limited inventory (5,402 units). TrenchFET® series device rated for 11A continuous drain current with superior on-state resistance of 12mOhm at 11A, 10V. Lowest gate threshold voltage (800mV minimum) and reduced gate charge (20nC at 5V) enable efficient gate drive circuits. Extended Vgs rating (±25V) provides additional design margin. RoHS3 compliant.

AO4468 (Alpha & Omega Semiconductor) — Not For New Designs status with highest inventory (60,300 units). Suitable for legacy system maintenance and repair applications. Offers 10.5A continuous drain current and enhanced power dissipation capability (3.1W). Extended Vgs rating (±20V) provides design flexibility.

Product Status Considerations:

Obsolete parts (DMS3016SSSA-13, DMS3016SSS-13): Use only for maintenance of existing systems or when design continuity is critical
Not For New Designs (AO4468): Acceptable for repair and legacy applications; not recommended for new product development
Last Time Buy (SI4890DY-T1-E3): Inventory is finite; suitable for near-term production with planned transition to active alternatives
Active (FDS6690A, FDS8878): Recommended for all new designs with assured long-term availability and manufacturer support

Frequently Asked Questions (FAQ)

Q: Can I use FDS6690A as a direct replacement for DMS3016SSSA-13?

A: Yes. The FDS6690A meets all electrical requirements for substitution. It maintains the same 30V Vdss rating, exceeds the 9.8A continuous drain current requirement (rated 11A), and is housed in the same 8-SOIC package. The FDS6690A offers improved performance with lower on-state resistance (12.5mOhm versus 13mOhm) and reduced gate charge (16nC versus 43nC), making it suitable for direct PCB replacement without circuit modification.

Q: What is the difference between DMS3016SSSA-13 and DMS3016SSS-13?

A: These parts are parametric equivalents with identical electrical specifications. Both are rated for 30V, 9.8A, with 13mOhm on-state resistance and 43nC gate charge. The primary difference is inventory availability and product status—both are obsolete. The DMS3016SSS-13 has higher stock levels (8,169 units), making it preferable for immediate procurement needs.

Q: Why do substitute parts have different gate charge values?

A: Gate charge varies based on semiconductor process technology and die design. Newer devices like FDS6690A (16nC) and SI4890DY-T1-E3 (20nC) use advanced trench technology, reducing gate charge compared to the original DMS3016SSHA-13 (43nC). Lower gate charge improves switching speed and reduces gate drive power consumption. This is a performance enhancement, not a compatibility issue.

Q: Is the 8-SOIC package identical across all substitute parts?

A: Yes. All substitute parts use the 8-SOIC package with 0.154" (3.90mm) width, ensuring identical PCB footprint and pin compatibility. Surface mount assembly equipment and reflow profiles remain unchanged.

Q: Which substitute part should I choose for a new design?

A: FDS6690A is recommended for new designs. It is the only active product among the substitutes, ensuring long-term availability and manufacturer support. It exceeds the original part's performance specifications while maintaining full electrical compatibility and RoHS3 compliance.

Q: Can I use SI4890DY-T1-E3 if FDS6690A is unavailable?

A: Yes. SI4890DY-T1-E3 is a qualified alternative with superior electrical characteristics (12mOhm on-state resistance, 11A continuous current). However, it is designated Last Time Buy, indicating finite inventory. Use this part only when FDS6690A is unavailable and production timeline permits.

Q: Are all substitute parts RoHS3 compliant?

A: FDS6690A, SI4890DY-T1-E3, and DMS3016SSS-13 are explicitly RoHS3 compliant. FDS8878 RoHS status is not specified in available documentation. AO4468 is RoHS3 compliant. Verify RoHS compliance with the manufacturer if regulatory certification is required for your application.

Q: What is the impact of different Vgs(th) values on circuit operation?

A: Gate threshold voltage (Vgs(th)) determines the minimum gate voltage required to turn the MOSFET on. The DMS3016SSHA-13 has Vgs(th) of 2.3V, while SI4890DY-T1-E3 has 800mV minimum. Lower threshold voltage enables operation with lower gate drive voltages, reducing power consumption in gate drive circuits. Higher threshold voltage (AO4468 at 3V, FDS6690A at 3V) requires slightly higher gate drive voltage but provides improved noise immunity. All substitutes operate with standard 10V gate drive voltage used in the original design.

Q: Can I mix DMS3016SSHA-13 and substitute parts in the same production batch?

A: Not recommended. While all parts are electrically compatible, mixing obsolete and active parts creates supply chain complexity and potential performance variation due to different manufacturing processes. Standardize on a single part number per production run. For ongoing production, transition to FDS6690A or FDS8878 to ensure consistent supply and performance.

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