DMS3016SSS-13 Equivalent & Substitute Parts

Part Overview

The DMS3016SSS-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with 9.8A continuous drain current at 25°C. The device features a Schottky diode body and is housed in an 8-SO surface mount package. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical and mechanical compatibility within the specified parameter ranges for this N-Channel MOSFET category.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	9.8	A
Rds On (Max) @ Id, Vgs	13	mOhm @ 9.8A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	2.3	V @ 250µA
Gate Charge (Qg) @ Vgs	43	nC @ 10V
Maximum Gate Voltage (Vgs)	±12	V
Input Capacitance (Ciss) @ Vds	1849	pF @ 15V
Power Dissipation (Max)	1.54	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the DMS3016SSS-13 are selected based on strict electrical and mechanical parameter alignment within the N-Channel MOSFET category. The following criteria determine substitution eligibility:

Critical Matching Parameters:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Continuous Drain Current (Id) @ 25°C: 9.8A or greater
Rds On (Max) @ 10V: 13mOhm or lower
Operating Temperature Range: -55°C to 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)

All substitute parts listed maintain these electrical and mechanical specifications, ensuring direct functional equivalence for applications requiring the DMS3016SSS-13.

Parameter Comparison

Parameter	DMS3016SSS-13 (Diodes Inc.)	FDS6690A (onsemi)	FDS8878 (Fairchild)	RS3E095BNGZETB (Rohm)	AO4468 (Alpha & Omega)
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vdss (V)	30	30	30	30	30
Id @ 25°C (A)	9.8	11	10.2	9.5	10.5
Rds On (Max) @ 10V (mOhm)	13 @ 9.8A	12.5 @ 11A	14 @ 10.2A	14.6 @ 9.5A	14 @ 11.6A
Vgs(th) (Max) @ 250µA (V)	2.3	3	2.5	2.5	3
Gate Charge (Qg) (nC)	43 @ 10V	16 @ 5V	26 @ 10V	8.3 @ 4.5V	24 @ 10V
Vgs (Max) (V)	±12	±20	±20	±20	±20
Ciss (Max) @ 15V (pF)	1849	1205	897	680	1200
Power Dissipation (Max) (W)	1.54 (Ta)	2.5 (Ta)	2.5 (Ta)	2 (Tc)	3.1 (Ta)
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm)	8-SOIC (0.154", 3.90mm)	8-SOIC (0.154", 3.90mm)	8-SOIC (0.154", 3.90mm)	8-SOIC (0.154", 3.90mm)
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Not specified	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	Not specified	1 (Unlimited)	1 (Unlimited)
Product Status	Obsolete	Active	Active	Active	Not For New Designs

Engineering Selection Recommendations

FDS6690A (onsemi) — Recommended Primary Substitute

The FDS6690A is an active product with superior electrical performance characteristics. It exceeds the DMS3016SSS-13 specifications in continuous drain current (11A vs. 9.8A) and provides lower on-resistance (12.5mOhm vs. 13mOhm). The device maintains full ROHS3 compliance and MSL 1 rating. Higher power dissipation capability (2.5W vs. 1.54W) provides additional thermal margin. This part is suitable for new designs and ongoing production.

FDS8878 (Fairchild Semiconductor) — Active Substitute

The FDS8878 is an active product offering comparable performance with 10.2A continuous drain current and 14mOhm on-resistance. It provides equivalent thermal performance (2.5W) and maintains the required operating temperature range. This part is suitable for applications where Fairchild device qualification is required.

RS3E095BNGZETB (Rohm Semiconductor) — Active Substitute

The RS3E095BNGZETB is an active product with 9.5A continuous drain current, closely matching the original specification. It features the lowest input capacitance (680pF) and lowest gate charge (8.3nC), making it suitable for high-frequency switching applications. ROHS3 compliance and MSL 1 rating are maintained. This part is suitable for new designs.

AO4468 (Alpha & Omega Semiconductor Inc.) — Legacy Substitute

The AO4468 is classified as "Not For New Designs" and should be used only for legacy system maintenance or repair applications. While it meets electrical specifications with 10.5A continuous drain current and 14mOhm on-resistance, its product status restricts use in new design initiatives. ROHS3 compliance and MSL 1 rating are maintained.

Frequently Asked Questions (FAQ)

Q: Can the FDS6690A directly replace the DMS3016SSS-13 in existing designs?

A: Yes. The FDS6690A maintains identical Vdss (30V), operating temperature range (-55°C to 150°C), and 8-SOIC package specifications. It exceeds the minimum continuous drain current requirement (11A vs. 9.8A) and provides lower on-resistance (12.5mOhm vs. 13mOhm). No circuit modifications are required for direct substitution.

Q: What is the primary difference between the substitute parts?

A: All substitute parts maintain the critical 30V Vdss rating and 8-SOIC package form factor. Differences exist in continuous drain current capability (9.5A to 11A), on-resistance characteristics, gate charge, and input capacitance. These variations allow selection based on specific application thermal and switching requirements.

Q: Why is the AO4468 marked "Not For New Designs"?

A: The AO4468 product status reflects manufacturer lifecycle decisions. While it meets all electrical and mechanical specifications for the DMS3016SSS-13, its restricted status indicates it should not be selected for new design initiatives. Use FDS6690A, FDS8878, or RS3E095BNGZETB for new applications.

Q: Are all substitute parts RoHS3 compliant?

A: FDS6690A, RS3E095BNGZETB, and AO4468 are explicitly ROHS3 compliant. FDS8878 RoHS status is not specified in the provided data. Verify FDS8878 RoHS compliance with the manufacturer if this certification is required for your application.

Q: What is the significance of the different gate charge values?

A: Gate charge (Qg) affects switching speed and driver power requirements. Lower gate charge (RS3E095BNGZETB at 8.3nC) reduces switching losses and driver stress, beneficial for high-frequency applications. Higher gate charge (DMS3016SSS-13 at 43nC) requires more driver current but may provide better noise immunity in certain circuit topologies.

Q: Can I use these parts interchangeably in high-frequency switching applications?

A: All substitute parts operate within the same -55°C to 150°C temperature range and maintain 30V Vdss rating. However, differences in input capacitance (680pF to 1849pF) and gate charge affect switching characteristics. RS3E095BNGZETB offers the lowest input capacitance and gate charge, making it optimal for high-frequency applications. Verify switching frequency compatibility with your specific circuit design.

Q: Is the 8-SOIC package identical across all parts?

A: Yes. All parts use the 8-SOIC package with 0.154" width and 3.90mm body width. PCB footprints and reflow profiles are compatible across all substitute parts.

Q: What is Moisture Sensitivity Level (MSL) 1?

A: MSL 1 indicates unlimited shelf life without moisture baking requirements. All listed parts carry MSL 1 rating, eliminating moisture-related handling constraints during storage and assembly.

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