DMS3012SFG-7 Equivalent & Substitute Parts

Part Overview

The DMS3012SFG-7 is an N-Channel 30V 12A MOSFET manufactured by Diodes Incorporated in the PowerDI3333-8 surface mount package. This device features a Schottky diode body and is rated for 890mW power dissipation at ambient temperature, with an operating range of -55°C to 150°C junction temperature.

The DMS3012SFG-7 is classified as Obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this MOSFET topology.

Substiute Parts

DMS3012SFG-7
Diodes IncorporatedIn Stock: 2087DMS3012SFG-7 Datasheet
DMS3012SFG-7
Current Part
DMG7702SFG-13
Diodes IncorporatedIn Stock: 19008DMG7702SFG-13 Datasheet
DMG7702SFG-13
Parametric Equivalent
IRFH8334TRPBF
Infineon TechnologiesIn Stock: 25191IRFH8334TRPBF Datasheet
IRFH8334TRPBF
MFR Recommended
RQ3E120BNTB
Rohm SemiconductorIn Stock: 3903RQ3E120BNTB Datasheet
RQ3E120BNTB
MFR Recommended
RQ3E130MNTB1
Rohm SemiconductorIn Stock: 3739RQ3E130MNTB1 Datasheet
RQ3E130MNTB1
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 12 A (Ta)
Rds On (Max) @ Id, Vgs 10 mOhm @ 13.5A, 10V
Gate Threshold Voltage (Vgs(th)) (Max) 2.5 V @ 250µA
Gate Charge (Qg) (Max) 14.7 nC @ 10V
Input Capacitance (Ciss) (Max) 4310 pF @ 15V
Power Dissipation (Max) 890 mW (Ta)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type 8-PowerVDFN
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the DMS3012SFG-7 is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

  • Drain to Source Voltage (Vdss): 30V minimum
  • Continuous Drain Current (Id): 12A minimum at 25°C ambient
  • Gate Threshold Voltage (Vgs(th)): 2.5V maximum
  • Maximum Gate Voltage (Vgs): ±20V
  • Operating Temperature Range: -55°C to 150°C minimum

Mechanical Equivalence Criteria:

  • Mounting Type: Surface Mount
  • Package Classification: 8-pin power package variants (PowerVDFN, HSMT, PQFN)
  • RoHS3 Compliance: Required
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

Substitution Categories:

Parametric Equivalent: DMG7702SFG-13 maintains identical electrical specifications and package footprint compatibility with the main part. This device is Active status and represents a direct functional replacement.

Manufacturer Recommended Equivalents: IRFH8334TRPBF (Infineon), RQ3E120BNTB (Rohm), and RQ3E130MNTB1 (Rohm) meet or exceed the electrical requirements of the DMS3012SFG-7. These parts are Active status and provide enhanced performance characteristics in specific parameters while maintaining voltage and current ratings.

Parameter Comparison

Parameter DMS3012SFG-7 DMG7702SFG-13 IRFH8334TRPBF RQ3E120BNTB RQ3E130MNTB1
Manufacturer Diodes Inc. Diodes Inc. Infineon Rohm Rohm
Product Status Obsolete Active Active Active Not For New Designs
Vdss (V) 30 30 30 30 30
Id @ 25°C (A) 12 (Ta) 12 (Ta) 14 (Ta) / 44 (Tc) 12 (Ta) 13 (Ta)
Rds On (Max) (mOhm) 10 @ 13.5A, 10V 10 @ 13.5A, 10V 9 @ 20A, 10V 9.3 @ 12A, 10V 8.1 @ 13A, 10V
Vgs(th) (Max) (V) 2.5 @ 250µA 2.5 @ 250µA 2.35 @ 25µA 2.5 @ 1mA 2.5 @ 1mA
Qg (Max) (nC) 14.7 @ 10V 14.7 @ 10V 15 @ 10V 29 @ 10V 14 @ 10V
Ciss (Max) (pF) 4310 @ 15V 4310 @ 15V 1180 @ 10V 1500 @ 15V 840 @ 15V
Power Dissipation (Max) 890mW (Ta) 890mW (Ta) 3.2W (Ta) / 30W (Tc) 2W (Ta) 2W (Ta)
Operating Temp (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
Package 8-PowerVDFN 8-PowerVDFN 8-PowerTDFN (PQFN 5x6) 8-PowerVDFN (8-HSMT 3.2x3) 8-PowerVDFN (8-HSMT 3.2x3)
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

For Direct Replacement (Identical Specifications):

DMG7702SFG-13 is the primary parametric equivalent to DMS3012SFG-7. Both devices share identical electrical specifications, gate charge characteristics, and input capacitance values. DMG7702SFG-13 is Active status with 18,944 units in stock, providing immediate supply availability. The 8-PowerVDFN package footprint is identical, enabling direct PCB substitution without layout modification.

For Enhanced Performance Applications:

IRFH8334TRPBF (Infineon HEXFET® series) exceeds the current rating of the main part (14A Ta / 44A Tc versus 12A Ta) and provides superior power dissipation capability (3.2W Ta / 30W Tc versus 890mW Ta). This device features lower on-resistance (9mOhm versus 10mOhm) and reduced input capacitance (1180pF versus 4310pF), resulting in faster switching characteristics. The PQFN (5x6) package requires PCB layout adjustment but maintains surface mount compatibility. IRFH8334TRPBF is Active status with 25,100 units available.

For Compact Form Factor Applications:

RQ3E120BNTB and RQ3E130MNTB1 (Rohm Semiconductor) utilize the 8-HSMT (3.2x3) package, a compact surface mount variant. RQ3E120BNTB maintains 12A continuous current rating with 9.3mOhm on-resistance. RQ3E130MNTB1 provides 13A continuous current with superior 8.1mOhm on-resistance and reduced gate charge (14nC versus 14.7nC). Both devices are rated for 2W power dissipation at ambient temperature. RQ3E120BNTB is Active status (3,872 units in stock). RQ3E130MNTB1 is classified as Not For New Designs (3,637 units in stock) and should be reserved for legacy system support only.

Compliance and Certification:

All substitute parts maintain ROHS3 compliance, REACH unaffected status, and MSL 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with current manufacturing and environmental standards.

Frequently Asked Questions (FAQ)

Q: Can DMG7702SFG-13 be used as a direct replacement for DMS3012SFG-7 without circuit modification?

A: Yes. DMG7702SFG-13 is a parametric equivalent with identical electrical specifications (30V Vdss, 12A Id, 10mOhm Rds On, 14.7nC Qg) and identical 8-PowerVDFN package footprint. No circuit or PCB layout changes are required.

Q: What is the primary advantage of IRFH8334TRPBF over the DMS3012SFG-7?

A: IRFH8334TRPBF provides higher continuous current capability (14A Ta / 44A Tc versus 12A Ta), lower on-resistance (9mOhm versus 10mOhm), and significantly higher power dissipation rating (3.2W Ta / 30W Tc versus 890mW Ta). These characteristics enable operation in higher-power applications. The PQFN (5x6) package differs from the original PowerVDFN, requiring PCB layout verification.

Q: Are the Rohm RQ3E120BNTB and RQ3E130MNTB1 devices pin-compatible with DMS3012SFG-7?

A: Both Rohm devices use the 8-HSMT (3.2x3) package classified as 8-PowerVDFN, maintaining pin compatibility with the original part. However, the physical package dimensions differ (3.2x3mm versus standard PowerVDFN), requiring PCB footprint verification before implementation.

Q: Why is RQ3E130MNTB1 marked as "Not For New Designs"?

A: RQ3E130MNTB1 carries a "Not For New Designs" product status designation from Rohm Semiconductor, indicating the manufacturer is transitioning away from this device. While functionally suitable for legacy system support, this part should not be selected for new product development. RQ3E120BNTB (Active status) is the preferred Rohm alternative.

Q: What is the significance of gate charge (Qg) differences among substitute parts?

A: Gate charge directly affects switching speed and gate drive circuit requirements. DMS3012SFG-7 and DMG7702SFG-13 both specify 14.7nC Qg. IRFH8334TRPBF specifies 15nC (minimal difference). RQ3E120BNTB specifies 29nC (approximately 2x higher), requiring higher gate drive current for equivalent switching performance. RQ3E130MNTB1 specifies 14nC (lower), enabling faster switching with reduced gate drive requirements.

Q: Can input capacitance (Ciss) differences affect circuit performance?

A: Yes. Input capacitance influences gate drive impedance and switching transient behavior. DMS3012SFG-7 specifies 4310pF Ciss, the highest among listed substitutes. IRFH8334TRPBF specifies 1180pF (significantly lower), resulting in faster gate response and reduced switching losses. RQ3E130MNTB1 specifies 840pF (lowest), providing optimal switching performance in high-frequency applications. Lower Ciss values reduce gate drive circuit stress.

Q: What packaging considerations apply when selecting a substitute?

A: DMS3012SFG-7 uses 8-PowerVDFN package. DMG7702SFG-13 is identical. IRFH8334TRPBF uses PQFN (5x6), requiring PCB layout modification. RQ3E120BNTB and RQ3E130MNTB1 use 8-HSMT (3.2x3), a compact variant requiring footprint verification. All are surface mount devices with identical pin count (8-pin). Thermal performance may vary due to package construction differences; thermal modeling is recommended for high-power applications.

Q: Are all substitute parts available in the same packaging options (Tape & Reel, Cut Tape)?

A: Packaging availability varies by manufacturer and distributor. DMG7702SFG-13 is available in standard packaging. IRFH8334TRPBF is supplied in Tape & Reel (TR). RQ3E120BNTB is available in Cut Tape (CT) and Digi-Reel®. RQ3E130MNTB1 is supplied in Tape & Reel (TR). Confirm packaging format with your component supplier before order placement.

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