DMS3012SFG-13 Equivalent & Substitute Parts

Part Overview

The DMS3012SFG-13 is an N-Channel 30V 12A MOSFET manufactured by Diodes Incorporated in the POWERDI3333-8 surface mount package. This device features a Schottky diode body and is designed for general-purpose switching applications requiring moderate current handling at 30V drain-source voltage ratings.

The DMS3012SFG-13 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

DMS3012SFG-13

Diodes IncorporatedIn Stock: 3184DMS3012SFG-13 Datasheet

Current PartRFQ

DMG7702SFG-13

Diodes IncorporatedIn Stock: 19008DMG7702SFG-13 Datasheet

Parametric EquivalentRFQ

AON6414A

Alpha & Omega Semiconductor Inc.In Stock: 5086AON6414A Datasheet

MFR RecommendedRFQ

RQ3E120GNTB

Rohm SemiconductorIn Stock: 15584RQ3E120GNTB Datasheet

MFR RecommendedRFQ

STL56N3LLH5

STMicroelectronicsIn Stock: 1364STL56N3LLH5 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the DMS3012SFG-13 is determined by strict equivalence across the following critical parameters:

Electrical Equivalence Criteria:

• Drain to Source Voltage (Vdss): 30V minimum
• Continuous Drain Current (Id): 12A or greater at 25°C
• Rds On (Max): 10mOhm or lower at specified gate voltage
• Vgs(th) (Max): 2.5V or lower at 250µA
• Vgs (Max): ±20V or greater
• Operating Temperature Range: -55°C to 150°C (TJ)

Mechanical Equivalence Criteria:

• Mounting Type: Surface Mount
• Package compatibility: 8-pin configurations suitable for POWERDI3333-8 footprint

Compliance Criteria:

• RoHS3 Compliant
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

Substitute parts must meet or exceed all electrical parameters while maintaining surface mount compatibility and regulatory compliance. Parts are grouped by product status (Active vs. Obsolete) and by manufacturer to facilitate selection based on supply availability and design requirements.

Parameter Comparison

Engineering Selection Recommendations

Primary Equivalent: DMG7702SFG-13

The DMG7702SFG-13 is the direct parametric equivalent to the DMS3012SFG-13. Both devices are manufactured by Diodes Incorporated and share identical electrical specifications, including Vdss, Id, Rds On, Vgs(th), gate charge, and operating temperature range. The DMG7702SFG-13 is classified as Active product status, ensuring ongoing availability and supply chain support. This part maintains the same POWERDI3333-8 package footprint and is fully compatible with existing PCB designs. Both parts are ROHS3 Compliant with MSL 1 (Unlimited) rating.

Manufacturer-Recommended Alternatives:

AON6414A (Alpha & Omega Semiconductor Inc.) — Active Status

The AON6414A meets all electrical requirements with superior performance characteristics. It provides 13A continuous drain current at Ta and 30A at Tc, with lower Rds On (8mOhm vs. 10mOhm). The device features reduced input capacitance (1380 pF vs. 4310 pF), enabling faster switching response. Package is 8-DFN (5x6), which differs from the original POWERDI3333-8 footprint and requires PCB layout verification. Higher power dissipation capability (2.3W Ta / 31W Tc) supports thermal margin in demanding applications. ROHS3 Compliant, MSL 1 (Unlimited).

RQ3E120GNTB (Rohm Semiconductor) — Active Status

The RQ3E120GNTB maintains 12A continuous drain current matching the original specification. Rds On is 8.8mOhm, providing improved efficiency. Gate charge is reduced to 10 nC, supporting faster switching. Input capacitance is significantly lower at 590 pF, enabling higher frequency operation. Package is 8-HSMT (3.2x3), a compact form factor requiring PCB footprint verification. Power dissipation is 2W (Ta) / 16W (Tc), providing thermal headroom. ROHS3 Compliant, MSL 1 (Unlimited).

STL56N3LLH5 (STMicroelectronics) — Active Status

The STL56N3LLH5 is a high-current alternative rated for 56A continuous drain current at Tc. Rds On is 9mOhm with significantly reduced gate charge (6.5 nC). This device is suitable for applications requiring higher current capacity or lower on-resistance. Vgs(th) is lower at 1V, affecting gate drive requirements. Input capacitance is 950 pF. Package is PowerFlat™ (5x6), requiring PCB layout assessment. Power dissipation is 62.5W (Tc), supporting high-power applications. ROHS3 Compliant, MSL 1 (Unlimited).

Selection Basis:

All substitute parts are Active product status, ensuring long-term supply availability. All parts maintain 30V Vdss rating, ±20V gate voltage rating, and -55°C to 150°C operating temperature range. All parts are ROHS3 Compliant with MSL 1 (Unlimited) rating. Package differences require PCB footprint verification before design implementation. Electrical parameter improvements (lower Rds On, reduced gate charge, lower input capacitance) in substitute parts enable performance optimization in new designs.

Frequently Asked Questions (FAQ)

Q: Can the DMG7702SFG-13 be used as a direct replacement for the DMS3012SFG-13?

A: Yes. The DMG7702SFG-13 is a direct parametric equivalent manufactured by the same company (Diodes Incorporated). Both devices share identical electrical specifications, the same POWERDI3333-8 package footprint, and equivalent compliance ratings. The DMG7702SFG-13 is Active product status, providing supply continuity for the obsolete DMS3012SFG-13.

Q: What are the key differences between the DMS3012SFG-13 and the AON6414A?

A: The AON6414A provides superior electrical performance with lower Rds On (8mOhm vs. 10mOhm), reduced input capacitance (1380 pF vs. 4310 pF), and higher current capability (13A Ta / 30A Tc vs. 12A Ta). However, the package is 8-DFN (5x6) instead of POWERDI3333-8, requiring PCB layout verification. Power dissipation is higher (2.3W Ta / 31W Tc vs. 0.89W Ta), supporting thermal margin in demanding applications.

Q: Are all substitute parts compatible with the original DMS3012SFG-13 PCB footprint?

A: No. The DMG7702SFG-13 maintains the same POWERDI3333-8 footprint and is directly compatible. The AON6414A uses 8-DFN (5x6) package, the RQ3E120GNTB uses 8-HSMT (3.2x3) package, and the STL56N3LLH5 uses PowerFlat™ (5x6) package. Each alternative requires PCB footprint verification and potential layout modification before implementation.

Q: Do all substitute parts meet the same compliance requirements as the DMS3012SFG-13?

A: Yes. All substitute parts listed are ROHS3 Compliant with Moisture Sensitivity Level (MSL) 1 (Unlimited). All parts operate across the -55°C to 150°C temperature range. All parts maintain ±20V gate voltage rating and 30V drain-source voltage rating.

Q: Which substitute part offers the best performance improvement?

A: Performance improvement depends on application requirements. The AON6414A provides the highest current capability (30A Tc) and power dissipation (31W Tc), suitable for high-power applications. The RQ3E120GNTB offers the lowest input capacitance (590 pF), enabling higher frequency switching. The STL56N3LLH5 provides the highest current rating (56A Tc) and lowest gate charge (6.5 nC), optimizing for high-current, high-frequency applications.

Q: What is the significance of Rds On (on-resistance) in selecting a substitute?

A: Rds On determines conduction losses and heat generation. Lower Rds On values reduce power dissipation and improve efficiency. The DMS3012SFG-13 specifies 10mOhm maximum. All substitute parts meet or exceed this specification (AON6414A: 8mOhm, RQ3E120GNTB: 8.8mOhm, STL56N3LLH5: 9mOhm), providing efficiency improvements in switching applications.

Q: What is the significance of gate charge (Qg) in selecting a substitute?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and enables faster switching response. The DMS3012SFG-13 specifies 14.7 nC. Substitute parts offer reduced gate charge (AON6414A: 24 nC, RQ3E120GNTB: 10 nC, STL56N3LLH5: 6.5 nC), with the STL56N3LLH5 providing the most significant reduction for high-frequency applications.

Q: What is the significance of input capacitance (Ciss) in selecting a substitute?

A: Input capacitance affects gate drive requirements and switching speed. Lower input capacitance reduces gate drive current demand and enables faster switching transitions. The DMS3012SFG-13 specifies 4310 pF. Substitute parts offer significantly reduced input capacitance (AON6414A: 1380 pF, RQ3E120GNTB: 590 pF, STL56N3LLH5: 950 pF), enabling higher frequency operation and reduced gate drive complexity.

Q: Can I use a higher-current rated MOSFET as a substitute?

A: Yes, provided all other electrical parameters meet or exceed the original specification. Higher current ratings provide design margin and thermal headroom. The STL56N3LLH5 (56A Tc) and AON6414A (30A Tc) both exceed the 12A requirement of the DMS3012SFG-13. Package compatibility and PCB layout must be verified before implementation.

Q: What is the difference between Ta (ambient temperature) and Tc (case temperature) current ratings?

A: Ta (ambient temperature) ratings assume natural convection cooling without heat sink. Tc (case temperature) ratings assume active cooling or heat sink attachment. The DMS3012SFG-13 specifies 12A at Ta. Substitute parts with Tc ratings (AON6414A: 30A Tc, RQ3E120GNTB: 16W Tc, STL56N3LLH5: 62.5W Tc) provide higher current capability with proper thermal management.