DMPH4015SPSQ-13 Equivalent & Substitute Parts

Part Overview

The DMPH4015SPSQ-13 is a P-Channel MOSFET manufactured by Diodes Incorporated, rated for 40V drain-to-source voltage with 50A continuous drain current at Tc. This device is housed in a PowerDI5060-8 surface mount package and is classified as Active product status. The component is suitable for power switching applications requiring P-channel enhancement mode operation in compact form factors.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are maintained across critical parameters including voltage rating, current capacity, on-resistance characteristics, and package footprint specifications.

Substiute Parts

DMPH4015SPSQ-13

Diodes IncorporatedIn Stock: 3326DMPH4015SPSQ-13 Datasheet

Current PartRFQ

PJQ5443-AU_R2_000A1

Panjit International Inc.In Stock: 9215PJQ5443-AU_R2_000A1 Datasheet

MFR RecommendedRFQ

PJQ5443_R2_00001

Panjit International Inc.In Stock: 8957PJQ5443_R2_00001 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the DMPH4015SPSQ-13 are qualified based on the following electrical and mechanical criteria:

Electrical Equivalence Parameters:

• Drain to Source Voltage (Vdss): 40V minimum rating
• Continuous Drain Current (Id) @ Tc: 50A minimum capacity
• Gate Threshold Voltage (Vgs(th)): 2.5V maximum @ 250µA
• On-Resistance (Rds On): Performance within acceptable operating range
• Gate Charge (Qg): Switching characteristic compatibility
• Maximum Gate Voltage (Vgs): ±20V or greater

Mechanical Compatibility Parameters:

• Mounting Type: Surface Mount
• Package Family: PowerDI5060-8 or equivalent DFN5060-8 footprint
• Pin Configuration: 8-pin power package

Compliance & Status:

• Product Status: Active
• RoHS Compliance: ROHS3 Compliant
• Moisture Sensitivity Level: MSL 1 (Unlimited)

The substitute parts listed maintain electrical performance within the specified operating envelope while providing equivalent or superior thermal and switching characteristics.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: PJQ5443-AU_R2_000A1

The PJQ5443-AU_R2_000A1 is qualified as a manufacturer-recommended substitute with the following supporting factors:

• Electrical specifications align with DMPH4015SPSQ-13 across voltage rating (40V Vdss) and current capacity (50A Tc)
• Gate threshold voltage and on-resistance characteristics maintain functional equivalence
• Surface mount package footprint (DFN5060-8) provides mechanical compatibility with PowerDI5060-8 layout
• Active product status ensures ongoing availability and supply chain continuity
• ROHS3 compliance and REACH unaffected status match regulatory requirements
• AEC-Q101 automotive qualification provides additional reliability assurance
• MSL 1 rating supports standard handling and storage procedures

Secondary Substitute: PJQ5443_R2_00001

The PJQ5443_R2_00001 provides equivalent electrical performance to the primary substitute with identical specifications. Selection between the two Panjit variants depends on supply chain availability and specific procurement requirements. Both parts maintain the same electrical and mechanical compatibility profile.

Design Considerations:

The substitute parts exhibit lower gate charge (23 nC vs. 91 nC) and reduced input capacitance (2767 pF vs. 4234 pF), resulting in faster switching characteristics. The on-resistance specification (12 mOhm vs. 10 mOhm) represents a minor increase within acceptable operating margins for most applications. Maximum operating temperature is reduced from 175°C to 150°C; applications requiring extended temperature operation above 150°C require design review.

Frequently Asked Questions (FAQ)

Q: Can the PJQ5443 series parts be used as direct replacements for the DMPH4015SPSQ-13?

A: Yes. Both PJQ5443 variants meet the electrical requirements for 40V P-channel MOSFET operation at 50A continuous drain current. The DFN5060-8 package footprint is mechanically compatible with PowerDI5060-8 layouts. Verification of PCB layout and thermal management design is required for specific applications.

Q: What are the key differences between the DMPH4015SPSQ-13 and substitute parts?

A: The primary differences are gate charge (91 nC vs. 23 nC), input capacitance (4234 pF vs. 2767 pF), and maximum operating temperature (175°C vs. 150°C). The substitute parts feature faster switching due to lower gate charge and capacitance. On-resistance increases slightly from 10 mOhm to 12 mOhm.

Q: Are there package compatibility concerns when substituting?

A: The DMPH4015SPSQ-13 uses PowerDI5060-8 packaging while substitute parts use DFN5060-8 packaging. Both are 8-pin power packages with equivalent footprints suitable for surface mount assembly. Pin configuration and thermal pad layout are compatible.

Q: What is the difference between PJQ5443-AU_R2_000A1 and PJQ5443_R2_00001?

A: Both parts have identical electrical specifications and package designations. The primary distinction is the PJQ5443-AU_R2_000A1 carries AEC-Q101 automotive qualification, while PJQ5443_R2_00001 does not specify this qualification. MSL rating differs (1 Unlimited vs. Not Applicable). Selection depends on application requirements and supply availability.

Q: Does the lower maximum operating temperature of substitute parts affect application suitability?

A: The substitute parts are rated to 150°C junction temperature compared to 175°C for the DMPH4015SPSQ-13. Applications operating within -55°C to 150°C temperature range are unaffected. Applications requiring sustained operation above 150°C require thermal design review and may necessitate the original part.

Q: Are the substitute parts RoHS and REACH compliant?

A: Yes. Both PJQ5443 variants are ROHS3 compliant and REACH unaffected, matching the compliance status of the DMPH4015SPSQ-13.

Q: How do the switching characteristics compare?

A: Substitute parts exhibit significantly lower gate charge (23 nC vs. 91 nC at different gate voltages) and reduced input capacitance (2767 pF vs. 4234 pF), resulting in faster switching transitions and reduced gate drive power requirements.