DMP3098LSD-13 Equivalent & Substitute Parts

Part Overview

The DMP3098LSD-13 is a dual P-channel MOSFET array manufactured by Diodes Incorporated, designed for surface mount applications in 8-SO packaging. This component operates at 30V drain-to-source voltage with a continuous drain current rating of 4.4A and maximum power dissipation of 1.8W. The device features logic level gate operation and is classified as an active product with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained across the specified parameter ranges. Alternative components may be required due to inventory availability, supply chain considerations, or design optimization within acceptable performance boundaries.

Substiute Parts

DMP3098LSD-13
Diodes IncorporatedIn Stock: 25372DMP3098LSD-13 Datasheet
DMP3098LSD-13
Current Part
IRF7316TRPBF
Infineon TechnologiesIn Stock: 37173IRF7316TRPBF Datasheet
IRF7316TRPBF
MFR Recommended
NTMD3P03R2G
onsemiIn Stock: 15374NTMD3P03R2G Datasheet
NTMD3P03R2G
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 4.4 A
On-Resistance (Rds On) @ Id, Vgs 65 mOhm @ 5A, 10V mOhm
Gate Threshold Voltage (Vgs(th)) @ Id 2.1 V @ 250µA
Gate Charge (Qg) @ Vgs 7.8 nC @ 10V
Input Capacitance (Ciss) @ Vds 336 pF @ 25V
Maximum Power Dissipation 1.8 W
Operating Temperature Range -55 to 150 °C (TJ)
Configuration 2 P-Channel (Dual)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
FET Feature Logic Level Gate

Substitute Part Grouping Explanation

Substitution eligibility for the DMP3098LSD-13 is determined by the following critical parameters:

Electrical Compatibility Criteria:

  • Drain to Source Voltage (Vdss) must equal or exceed 30V
  • Configuration must be 2 P-Channel (Dual) MOSFET array
  • FET Feature must be Logic Level Gate
  • Operating temperature range must encompass -55°C to 150°C (TJ)
  • Technology must be MOSFET (Metal Oxide)

Mechanical Compatibility Criteria:

  • Package / Case must be 8-SOIC (0.154", 3.90mm Width)
  • Mounting Type must be Surface Mount
  • Supplier Device Package must be compatible with 8-SO or 8-SOIC footprint

Regulatory & Compliance Criteria:

  • RoHS3 Compliance required
  • Moisture Sensitivity Level (MSL) must be 1 (Unlimited)
  • REACH Status must be REACH Unaffected
  • ECCN classification must be EAR99

Substitute parts identified below meet all mandatory electrical, mechanical, and regulatory requirements. Variations in continuous drain current, on-resistance, gate charge, and power dissipation are permissible when the substitute part meets or exceeds the primary performance envelope.

Parameter Comparison

Parameter DMP3098LSD-13 (Diodes) IRF7316TRPBF (Infineon) NTMD3P03R2G (onsemi)
Manufacturer Diodes Incorporated Infineon Technologies onsemi
Drain to Source Voltage (Vdss) 30V 30V 30V
Continuous Drain Current (Id) @ 25°C 4.4A 4.9A 2.34A
Rds On (Max) @ Id, Vgs 65 mOhm @ 5A, 10V 58 mOhm @ 4.9A, 10V 85 mOhm @ 3.05A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 1V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.8 nC @ 10V 34 nC @ 10V 25 nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 336 pF @ 25V 710 pF @ 25V 750 pF @ 24V
Power - Max 1.8W 2W 730mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Configuration 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount Surface Mount Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected
Product Status Active Active Active

Engineering Selection Recommendations

IRF7316TRPBF (Infineon Technologies)

The IRF7316TRPBF is a direct substitute for the DMP3098LSD-13 with enhanced electrical performance. This component exceeds the primary part's continuous drain current specification (4.9A versus 4.4A) and provides superior on-resistance characteristics (58 mOhm versus 65 mOhm). The IRF7316TRPBF operates within the identical voltage and temperature envelope, maintains full RoHS3 compliance, and is packaged in the same 8-SOIC form factor. The lower gate threshold voltage (1V versus 2.1V) provides improved logic level gate operation. This substitute is suitable for applications requiring equivalent or enhanced performance with no design modification required.

NTMD3P03R2G (onsemi)

The NTMD3P03R2G is a functional substitute for the DMP3098LSD-13 with reduced current handling capability. This component operates at the same 30V drain-to-source voltage and maintains full RoHS3 compliance and identical temperature range. The continuous drain current rating of 2.34A is lower than the primary part (4.4A), and maximum power dissipation is reduced to 730mW. The NTMD3P03R2G is suitable for applications where the primary part's current capacity exceeds design requirements. This substitute maintains identical package geometry and surface mount compatibility. Selection of this part requires verification that application current demands do not exceed 2.34A continuous drain current.

Both substitute parts maintain active product status, full regulatory compliance, and mechanical compatibility with the original DMP3098LSD-13 design.

Frequently Asked Questions (FAQ)

Q: Can the IRF7316TRPBF replace the DMP3098LSD-13 without circuit modification?

A: Yes. The IRF7316TRPBF maintains identical drain-to-source voltage (30V), configuration (2 P-Channel dual MOSFET), package geometry (8-SOIC), and operating temperature range (-55°C to 150°C). The substitute provides enhanced continuous drain current (4.9A versus 4.4A) and improved on-resistance characteristics. No circuit modification is required.

Q: What are the limitations of the NTMD3P03R2G as a substitute?

A: The NTMD3P03R2G has a reduced continuous drain current rating of 2.34A compared to the DMP3098LSD-13's 4.4A specification. Maximum power dissipation is also reduced to 730mW versus 1.8W. This substitute is suitable only for applications where continuous drain current does not exceed 2.34A. All other electrical and mechanical parameters remain compatible.

Q: Are all three parts pin-compatible?

A: Yes. All three parts (DMP3098LSD-13, IRF7316TRPBF, and NTMD3P03R2G) are packaged in 8-SOIC form factor with 0.154" width and identical pin assignments for dual P-channel MOSFET arrays. Direct PCB footprint compatibility is maintained.

Q: Do all substitute parts meet the same regulatory requirements?

A: Yes. Both IRF7316TRPBF and NTMD3P03R2G are RoHS3 compliant, REACH unaffected, classified as EAR99, and carry MSL 1 (Unlimited) moisture sensitivity rating. All three parts meet identical regulatory and environmental standards.

Q: What is the primary difference in gate charge between the parts?

A: The DMP3098LSD-13 has the lowest gate charge at 7.8 nC @ 10V, providing faster switching response. The IRF7316TRPBF has 34 nC @ 10V, and the NTMD3P03R2G has 25 nC @ 10V. Higher gate charge results in slower switching transitions. Applications requiring minimum switching delay should prioritize the DMP3098LSD-13 or NTMD3P03R2G.

Q: Which substitute offers the best on-resistance performance?

A: The IRF7316TRPBF provides the lowest on-resistance at 58 mOhm @ 4.9A, 10V, compared to the DMP3098LSD-13 at 65 mOhm @ 5A, 10V. Lower on-resistance reduces power dissipation and heat generation during continuous operation.

Q: Can the NTMD3P03R2G be used in high-current applications?

A: No. The NTMD3P03R2G is rated for 2.34A continuous drain current, which is insufficient for applications requiring the DMP3098LSD-13's 4.4A capability. For high-current applications, the IRF7316TRPBF is the appropriate substitute.

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