DMP3097LQ-13 Equivalent & Substitute Parts Reference

Part Overview

The DMP3097LQ-13 is a P-Channel MOSFET, designed for surface mount applications in the Transistors, FETs, MOSFETs category. It features a 30 V drain-to-source voltage (Vdss), a continuous drain current (Id) of 3.9A at 25°C, and is supplied in a SOT-23-3 (TO-236-3, SC-59, SOT-23-3) package. The device is qualified to AEC-Q101 automotive standards and is compliant with RoHS3 and REACH. The product is active with 655 pieces in stock. Due to supply chain considerations or application-specific requirements, identifying parametric equivalents and substitute MOSFETs in the same product category with matching characteristics is necessary to maintain assembly continuity and ensure form, fit, and function in the end application.

Substiute Parts

DMP3097LQ-13
Diodes IncorporatedIn Stock: 755DMP3097LQ-13 Datasheet
DMP3097LQ-13
Current Part
DMP3097L-7
Diodes IncorporatedIn Stock: 9666DMP3097L-7 Datasheet
DMP3097L-7
Parametric Equivalent
DMP3097LQ-7
Diodes IncorporatedIn Stock: 1205DMP3097LQ-7 Datasheet
DMP3097LQ-7
Parametric Equivalent

Key Parameters

ParameterValue
Manufacturer Part NumberDMP3097LQ-13
CategoryTransistors, FETs, MOSFETs
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C3.9A (Ta)
Rds On (Max) @ Id, Vgs65mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs13.4 nC @ 10 V
Power Dissipation (Max)1W
Vgs(th) (Max) @ Id2.1V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds563 pF @ 25 V
Mounting TypeSurface Mount
Supplier Device Package / Package CaseSOT-23-3; TO-236-3, SC-59, SOT-23-3
Operating Temperature-55°C ~ 150°C (TJ)
GradeAutomotive
QualificationAEC-Q101
RoHS StatusROHS3 Compliant
REACH StatusREACH Unaffected

Substitute Part Grouping Explanation

Substitution logic for the DMP3097LQ-13 is based solely on identical key parameters required for equivalence in electrical and mechanical performance. All listed substitute MOSFETs conform to the following strictly-matched parameters: P-Channel polarity, MOSFET (Metal Oxide) technology, drain-to-source voltage of 30 V, continuous drain current of 3.9A (Ta), maximum Rds On of 65mOhm at 3.8A and 10V, gate charge (Qg) of 13.4 nC at 10 V, Vgs(th) (Max) of 2.1V at 250µA, drive voltage (Max Rds On, Min Rds On) of 4.5V/10V, maximum Vgs of ±20V, input capacitance of 563 pF at 25V, power dissipation of 1W, package compatibility (SOT-23-3 / TO-236-3 / SC-59), surface mount mounting, and compliance to AEC-Q101, ROHS3, and REACH where applicable.

Key parameters for substitution:

  • Manufacturer: Diodes Incorporated
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Vdss: 30 V
  • Id: 3.9A (Ta)
  • Rds On: 65mOhm @ 3.8A, 10V
  • Qg: 13.4 nC @ 10 V
  • Vgs(th): 2.1V @ 250µA
  • Drive Voltage: 4.5V, 10V
  • Vgs (Max): ±20V
  • Ciss: 563 pF @ 25V
  • Power Dissipation: 1W
  • Package: SOT-23-3 / TO-236-3 / SC-59
  • Mounting: Surface Mount
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Grade and Qualification: as listed

Parameter Comparison

Parameter DMP3097LQ-13 DMP3097L-7 DMP3097LQ-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Category Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 3.9A (Ta) 3.9A (Ta) 3.9A (Ta)
Rds On (Max) @ Id, Vgs 65mOhm @ 3.8A, 10V 65mOhm @ 3.8A, 10V 65mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs 13.4 nC @ 10 V 13.4 nC @ 10 V 13.4 nC @ 10 V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA 2.1V @ 250µA
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 563 pF @ 25 V 563 pF @ 25 V 563 pF @ 25 V
Power Dissipation (Max) 1W 1W 1W
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade Automotive Automotive
Qualification AEC-Q101 AEC-Q101
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected
Product Status Active Active Active
Inventory 655 Pcs 9600 Pcs 1148 Pcs

Engineering Selection Recommendations

All listed substitute MOSFETs (DMP3097L-7, DMP3097LQ-7) maintain active product status and share matching RoHS3 and REACH compliance. The DMP3097LQ-13 and DMP3097LQ-7 include explicit automotive grade (AEC-Q101) qualification. For selection involving applications that mandate automotive-grade or industry qualification, prioritize substitutes that are specified as automotive and AEC-Q101 qualified.

Frequently Asked Questions (FAQ)

Q1: What criteria define a parametric equivalent for the DMP3097LQ-13 MOSFET?
A1: Parametric equivalence is established when a substitute matches all primary electrical and mechanical parameters: FET type (P-Channel), voltage and current ratings, Rds On, gate charge, drive voltage, package/case, mounting type, and compliance standards.

Q2: Are the substitute MOSFETs pin-to-pin compatible with the DMP3097LQ-13?
A2: All substitutes listed (DMP3097L-7, DMP3097LQ-7) share the same SOT-23-3 (TO-236-3, SC-59, SOT-23-3) package and are suitable for surface mount placement.

Q3: Should automotive qualification (AEC-Q101) be considered in substitution?
A3: For automotive sector or high-reliability applications, use only MOSFETs specified with AEC-Q101 qualification, such as DMP3097LQ-13 and DMP3097LQ-7.

Q4: How do compliance certifications impact part selection?
A4: RoHS3 and REACH compliance are required in regulated environments. All substitutes in this reference are ROHS3 and REACH compliant.

Q5: Is there any difference in electrical performance among the listed substitutes?
A5: All substitutes presented in this reference have identical key parameter values as per the supplied data.

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