DMP3035LSS-13 Equivalent & Substitute Parts

Part Overview

The DMP3035LSS-13 is a P-Channel MOSFET manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with 11A continuous drain current at 25°C. The device is housed in an 8-SOIC surface mount package and is classified as Active product status with full RoHS3 compliance. Substitute parts are necessary when the original part becomes unavailable, when alternative packaging formats are required, or when design specifications allow for higher current ratings or improved electrical characteristics within the same voltage class and package family.

Substiute Parts

DMP3035LSS-13

Diodes IncorporatedIn Stock: 20121DMP3035LSS-13 Datasheet

Current PartRFQ

DMP3036SSS-13

Diodes IncorporatedIn Stock: 1338DMP3036SSS-13 Datasheet

MFR RecommendedRFQ

FDS6681Z

onsemiIn Stock: 80187FDS6681Z Datasheet

MFR RecommendedRFQ

NTMS4177PR2G

onsemiIn Stock: 35344NTMS4177PR2G Datasheet

MFR RecommendedRFQ

RRH090P03GZETB

Rohm SemiconductorIn Stock: 2338RRH090P03GZETB Datasheet

MFR RecommendedRFQ

RRH100P03GZETB

Rohm SemiconductorIn Stock: 2129RRH100P03GZETB Datasheet

MFR RecommendedRFQ

SI4435DYTRPBF

Infineon TechnologiesIn Stock: 17423SI4435DYTRPBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the DMP3035LSS-13 are selected based on strict electrical and mechanical compatibility criteria. All substitute MOSFETs must meet the following requirements:

Mandatory Compatibility Parameters:

• FET Type: P-Channel
• Drain-to-Source Voltage (Vdss): 30V (exact match)
• Package/Case: 8-SOIC (0.154", 3.90mm Width) or equivalent 8-SO/8-SOP surface mount package
• Mounting Type: Surface Mount
• Operating Temperature Range: Minimum -55°C to 150°C (TJ)
• Moisture Sensitivity Level: 1 (Unlimited)

Allowable Variation Parameters:

• Continuous Drain Current (Id): Equal to or greater than 11A
• On-Resistance (Rds On): Equal to or lower than 16 mOhm (lower resistance is acceptable)
• Gate Charge (Qg): May vary based on current rating
• Power Dissipation: May vary based on thermal characteristics
• Product Status: Active or Not For New Designs (both acceptable for substitution)

Substitute parts are grouped into two categories: manufacturer-recommended direct substitutes with enhanced specifications, and compatible alternatives with comparable electrical performance within the 30V P-Channel MOSFET class.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute (Manufacturer Recommended): The DMP3036SSS-13 from Diodes Incorporated is the manufacturer-recommended substitute. It maintains identical voltage rating (30V Vdss) and package format (8-SOIC) while providing enhanced current capability (19.5A vs. 11A). This part is Active status and fully RoHS3 compliant. The DMP3036SSS-13 is suitable for direct replacement in applications where higher current capacity is beneficial or where the original part is unavailable.

High-Performance Alternative: The FDS6681Z from onsemi (PowerTrench® series) offers the highest current rating (20A) and lowest on-resistance (4.6 mOhm @ 20A, 10V) among all substitutes. This part is Active status and RoHS3 compliant. The FDS6681Z is appropriate for applications requiring superior thermal performance and lower conduction losses, though it exhibits higher gate charge (260 nC) and input capacitance (7540 pF).

Lower-Current Alternatives: The SI4435DYTRPBF (Infineon HEXFET®) and NTMS4177PR2G (onsemi) are suitable for applications where the 11A rating of the original part exceeds actual requirements. Both are Active status and RoHS3 compliant. The SI4435DYTRPBF provides 8A continuous current with 20 mOhm on-resistance. The NTMS4177PR2G provides 6.6A continuous current with 12 mOhm on-resistance.

Legacy Alternatives (Not For New Designs): The RRH090P03GZETB and RRH100P03GZETB from Rohm Semiconductor are classified as Not For New Designs. These parts are suitable only for replacement in existing designs or legacy applications. Both are RoHS3 compliant and operate within the -55°C to 150°C temperature range.

All substitute parts maintain full RoHS3 compliance, Moisture Sensitivity Level 1 (Unlimited), and REACH Unaffected status, ensuring regulatory compatibility with the original DMP3035LSS-13.

Frequently Asked Questions (FAQ)

Q: Can the DMP3036SSS-13 be used as a direct replacement for the DMP3035LSS-13?

A: Yes. The DMP3036SSS-13 is the manufacturer-recommended substitute. Both parts share identical voltage rating (30V Vdss), package type (8-SOIC), and operating temperature range (-55°C to 150°C). The DMP3036SSS-13 provides higher current capability (19.5A vs. 11A) and is fully compatible from an electrical and mechanical standpoint.

Q: What is the difference between the packaging formats listed for these MOSFETs?

A: The substitute parts use three equivalent surface mount package designations: 8-SOIC, 8-SO, and 8-SOP. All three refer to 8-pin Small Outline packages with 0.154" (3.90mm) width. These packages are mechanically and electrically interchangeable on standard PCB layouts designed for 8-pin SOIC footprints.

Q: Is the FDS6681Z suitable for applications requiring the full 11A rating of the DMP3035LSS-13?

A: Yes. The FDS6681Z is rated for 20A continuous drain current, which exceeds the 11A requirement. This part provides superior performance with lower on-resistance (4.6 mOhm vs. 16 mOhm) and is suitable for any application within the 11A operating range.

Q: Why do some substitute parts have lower current ratings than the original DMP3035LSS-13?

A: The NTMS4177PR2G (6.6A) and SI4435DYTRPBF (8A) are included as substitutes for applications where design specifications allow for lower current ratings. These parts maintain the same 30V voltage class and package compatibility but are not suitable for applications requiring the full 11A capability of the original part.

Q: Can I use the RRH090P03GZETB or RRH100P03GZETB in new designs?

A: No. Both Rohm Semiconductor parts are classified as Not For New Designs. These parts are suitable only for replacement in existing designs or legacy applications. For new designs, use Active status alternatives such as the DMP3036SSS-13, FDS6681Z, SI4435DYTRPBF, or NTMS4177PR2G.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed are ROHS3 Compliant with Moisture Sensitivity Level 1 (Unlimited) and REACH Unaffected status, matching the regulatory compliance of the original DMP3035LSS-13.

Q: What is the significance of gate charge (Qg) differences among these MOSFETs?

A: Gate charge affects switching speed and driver circuit requirements. The DMP3035LSS-13 has 30.7 nC gate charge. Substitutes range from 16.5 nC (DMP3036SSS-13) to 260 nC (FDS6681Z). Lower gate charge enables faster switching; higher gate charge may require stronger gate drive circuits. Selection depends on specific circuit switching frequency and driver capabilities.

Q: How do on-resistance (Rds On) differences impact circuit performance?

A: On-resistance directly affects conduction losses and heat dissipation. The DMP3035LSS-13 has 16 mOhm on-resistance. Lower values (such as FDS6681Z at 4.6 mOhm) reduce power dissipation and heat generation. Higher values increase conduction losses. Selection depends on thermal budget and efficiency requirements of the application.