DMP3010LPSQ-13 Equivalent & Substitute Parts

Part Overview

The DMP3010LPSQ-13 is a P-Channel MOSFET manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with 36A continuous drain current at 25°C. This device is housed in a PowerDI5060-8 surface mount package and is designed for power switching applications requiring low on-resistance and high current handling capability. The part maintains Active product status and is RoHS3 compliant with unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatibility with the application's thermal and spatial constraints.

Substiute Parts

DMP3010LPSQ-13

Diodes IncorporatedIn Stock: 2244DMP3010LPSQ-13 Datasheet

Current PartRFQ

FDMS6673BZ

onsemiIn Stock: 3902FDMS6673BZ Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the DMP3010LPSQ-13 is determined by equivalence across the following critical parameters:

Electrical Equivalence Criteria:

• FET Type: P-Channel topology
• Drain to Source Voltage (Vdss): 30V rating
• Gate-Source Voltage (Vgs): Operating range compatibility
• Threshold Voltage (Vgs(th)): Gate drive compatibility
• On-Resistance (Rds On): Conduction loss characteristics
• Gate Charge (Qg): Switching speed and drive requirements
• Input Capacitance (Ciss): Switching transient behavior

Mechanical & Compliance Criteria:

• Mounting Type: Surface Mount
• Operating Temperature Range: -55°C to 150°C (TJ)
• RoHS3 Compliance: Environmental regulatory requirement
• Moisture Sensitivity Level: MSL 1 (Unlimited)

The FDMS6673BZ from onsemi qualifies as a substitute based on matching P-Channel topology, 30V Vdss rating, compatible gate drive voltages, and equivalent operating temperature range. Both devices maintain RoHS3 compliance and MSL 1 rating. Differences in continuous drain current rating and package geometry are noted in the parameter comparison table below.

Parameter Comparison

Engineering Selection Recommendations

DMP3010LPSQ-13 (Primary Selection): The DMP3010LPSQ-13 is the specified component for applications requiring 36A continuous drain current at 25°C ambient temperature. This device delivers the highest current capacity within the 30V P-Channel MOSFET category and maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

FDMS6673BZ (Substitute Selection): The FDMS6673BZ from onsemi serves as an electrical substitute where continuous drain current requirements do not exceed 15.2A at 25°C ambient (Ta) or 28A at case temperature (Tc). This device maintains equivalent 30V Vdss rating, compatible gate drive characteristics, and identical operating temperature range (-55°C to 150°C). Both devices are RoHS3 compliant with MSL 1 rating.

The FDMS6673BZ exhibits lower on-resistance (6.8 mOhm vs. 7.5 mOhm) and slightly higher threshold voltage (3.0V vs. 2.1V). Gate charge and input capacitance values are equivalent within measurement tolerance. The substitute is suitable for applications where thermal management via case temperature (Tc) rating is available and current demands remain within specified limits.

Both devices maintain Active product status and are suitable for new designs. Selection between primary and substitute parts is determined by application current requirements and thermal design constraints.

Frequently Asked Questions (FAQ)

Q: Can the FDMS6673BZ replace the DMP3010LPSQ-13 in all applications?

A: The FDMS6673BZ is electrically equivalent for applications where continuous drain current does not exceed 15.2A at 25°C ambient temperature (Ta) or 28A at case temperature (Tc). The DMP3010LPSQ-13 is rated for 36A continuous drain current and must be used where higher current capacity is required.

Q: Are the package dimensions identical between these two parts?

A: Both devices use 8-PowerTDFN surface mount packages. Physical dimensions and PCB footprints are compatible. Consult manufacturer datasheets for precise dimensional specifications if layout verification is required.

Q: What is the significance of the threshold voltage difference (2.1V vs. 3.0V)?

A: The threshold voltage (Vgs(th)) determines the gate-source voltage at which the MOSFET begins to conduct. The DMP3010LPSQ-13 exhibits lower threshold voltage (2.1V), allowing operation with lower gate drive voltages. The FDMS6673BZ requires higher gate drive voltage (3.0V) for equivalent conduction. Gate drive circuit design must accommodate this difference.

Q: Do both parts support the same gate-source voltage range?

A: The DMP3010LPSQ-13 supports ±20V maximum gate-source voltage. The FDMS6673BZ supports ±25V maximum gate-source voltage. Both devices operate within standard gate drive voltage ranges. The FDMS6673BZ provides additional margin for gate voltage transients.

Q: Are there thermal performance differences between these devices?

A: The DMP3010LPSQ-13 is rated for 2.18W power dissipation at 25°C ambient (Ta). The FDMS6673BZ is rated for 2.5W at 25°C ambient (Ta) and 73W at case temperature (Tc). The FDMS6673BZ provides higher power dissipation capability when case temperature management is implemented. Thermal design requirements depend on application duty cycle and heat sinking strategy.

Q: Are both parts compliant with current environmental regulations?

A: Both the DMP3010LPSQ-13 and FDMS6673BZ are RoHS3 compliant and REACH unaffected. Both devices carry MSL 1 (Unlimited) moisture sensitivity rating, indicating no moisture sensitivity restrictions during storage and handling.

Q: What is the difference between Ta and Tc current ratings?

A: Ta (ambient temperature) rating specifies continuous drain current at 25°C ambient temperature without active case temperature management. Tc (case temperature) rating specifies continuous drain current when the device case is actively cooled to a specified temperature. The FDMS6673BZ 28A (Tc) rating indicates higher current capacity is available with thermal management implementation.