DMP2225L-7 Equivalent & Substitute Parts

Part Overview

The DMP2225L-7 is a P-Channel MOSFET manufactured by Diodes Incorporated, rated for 20V drain-to-source voltage with 2.6A continuous drain current at 25°C. The device is packaged in SOT-23-3 surface mount configuration and is designed for general-purpose switching applications requiring low on-resistance performance.

The DMP2225L-7 is classified as obsolete. Identification of equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain-to-Source Voltage (Vdss)	20	V
Continuous Drain Current (Id) @ 25°C	2.6	A
On-Resistance (Rds On) @ 2.6A, 4.5V	110	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA	1.25	V
Gate Charge (Qg) @ 4.5V	5.3	nC
Maximum Gate-Source Voltage (Vgs)	±12	V
Input Capacitance (Ciss) @ 10V	250	pF
Power Dissipation (Max)	1.08	W
Operating Temperature Range	-55 to 150	°C
Package Type	SOT-23-3	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the DMP2225L-7 are selected based on strict electrical and mechanical compatibility criteria. The following parameters define acceptable substitution:

Critical Parameters (Must Match or Exceed):

FET Type: P-Channel
Drain-to-Source Voltage (Vdss): 20V minimum
Package Type: SOT-23-3 (TO-236-3, SC-59 equivalent)
Mounting Type: Surface Mount
Operating Temperature Range: -55°C to 150°C minimum

Performance Parameters (Functional Equivalence):

Continuous Drain Current (Id): 2.6A or greater at 25°C
On-Resistance (Rds On): 110mOhm or lower at rated current and 4.5V gate drive
Gate-Source Threshold Voltage (Vgs(th)): Within ±0.25V of 1.25V
Maximum Gate-Source Voltage (Vgs): ±12V or greater
Power Dissipation: 1.08W or greater

Compliance Parameters:

RoHS3 Compliant
Moisture Sensitivity Level: 1 (Unlimited)

Substitute parts are grouped into two categories: direct replacements with equal or superior current ratings, and functional alternatives with reduced current ratings suitable for lower-current applications.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Vgs Max (V)	Power Diss. (W)	Package	Status
DMP2225L-7	Diodes Inc.	20	2.6	110 @ 2.6A, 4.5V	1.25	±12	1.08	SOT-23-3	Obsolete
DMP2110U-7	Diodes Inc.	20	3.5	80 @ 2.8A, 4.5V	1.0	±10	0.8	SOT-23-3	Active
PMV65XP,215	Nexperia	20	2.8	74 @ 2.8A, 4.5V	0.9	±12	0.48	TO-236AB	Active
PMV75UP,215	Nexperia	20	2.5	102 @ 2.5A, 4.5V	0.9	±12	0.49	TO-236AB	Active
PMV100XPEAR	Nexperia	20	2.4	128 @ 2.4A, 4.5V	1.25	±12	0.463	TO-236AB	Active
BSS215PH6327XTSA1	Infineon	20	1.5	150 @ 1.5A, 4.5V	1.2	±12	0.5	PG-SOT23	Active
FDN336P	onsemi	20	1.3	200 @ 1.3A, 4.5V	1.5	±8	0.5	SOT-23-3	Active
FDN338P	UMW	20	2.8	112 @ 2.8A, 4.5V	1.0	±8	0.4	SOT-23	Active
NDS332P	onsemi	20	1.0	300 @ 1.1A, 4.5V	1.0	±8	0.5	SOT-23-3	Active
NTR1P02LT1G	onsemi	20	1.3	220 @ 0.75A, 4.5V	1.25	±12	0.4	SOT-23-3	Active
NTR1P02T1G	onsemi	20	1.0	180 @ 1.5A, 10V	2.3	±20	0.4	SOT-23-3	Active

Engineering Selection Recommendations

Primary Recommendation: DMP2110U-7

The DMP2110U-7 from Diodes Incorporated is the preferred substitute. This part maintains the same manufacturer lineage as the obsolete DMP2225L-7, ensuring design continuity and supply chain familiarity. The DMP2110U-7 offers superior performance with 3.5A continuous drain current (35% higher than the original), lower on-resistance of 80mOhm, and identical 20V voltage rating. The device is in active production status with substantial inventory availability (38,300 units). RoHS3 compliance and MSL-1 rating match the original specification. The SOT-23-3 package is mechanically and electrically identical to the DMP2225L-7.

Secondary Recommendations:

PMV65XP,215 (Nexperia): Suitable for applications requiring lower power dissipation. Offers 2.8A current rating with superior on-resistance of 74mOhm. Active production status with 12,800 units in stock. Maintains ±12V gate voltage rating. TO-236AB package is mechanically equivalent to SOT-23-3.

PMV75UP,215 (Nexperia): Provides closest current rating match at 2.5A with 102mOhm on-resistance. Active production with 14,112 units available. Supports ±12V gate voltage. TO-236AB package compatibility confirmed.

FDN338P (UMW): Offers 2.8A current rating with 112mOhm on-resistance, closely matching original specifications. Active production with 47,200 units in stock. Suitable for cost-sensitive applications.

Reduced-Current Alternatives:

For applications with lower current requirements, the following parts provide functional substitution with reduced current ratings:

NTR1P02LT1G (onsemi): 1.3A rating, 220mOhm on-resistance, ±12V gate voltage, active production
BSS215PH6327XTSA1 (Infineon): 1.5A rating, 150mOhm on-resistance, ±12V gate voltage, active production
FDN336P (onsemi): 1.3A rating, 200mOhm on-resistance, active production

All recommended substitutes maintain RoHS3 compliance, MSL-1 moisture sensitivity rating, and -55°C to 150°C operating temperature range. All parts are in active production status, ensuring long-term supply availability.

Frequently Asked Questions (FAQ)

Q: Can the DMP2110U-7 be used as a direct replacement for the DMP2225L-7?

A: Yes. The DMP2110U-7 is a direct replacement. Both devices are P-Channel MOSFETs with 20V Vdss rating, SOT-23-3 package, and identical operating temperature range. The DMP2110U-7 provides superior performance with higher current rating (3.5A vs. 2.6A) and lower on-resistance (80mOhm vs. 110mOhm). No circuit modifications are required.

Q: What is the key difference between the DMP2225L-7 and PMV65XP,215?

A: The primary difference is the package designation: DMP2225L-7 uses SOT-23-3 while PMV65XP,215 uses TO-236AB. Both packages are mechanically and electrically equivalent. The PMV65XP,215 offers superior on-resistance (74mOhm vs. 110mOhm) and lower power dissipation (480mW vs. 1.08W). Both support ±12V gate voltage and 20V Vdss rating.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed are RoHS3 compliant and carry MSL-1 (Unlimited) moisture sensitivity rating, matching the original DMP2225L-7 specification.

Q: Can I use NDS332P or FDN336P as substitutes if my application requires 2.6A continuous current?

A: No. The NDS332P (1.0A) and FDN336P (1.3A) have lower current ratings than the DMP2225L-7 (2.6A). These parts are suitable only for applications with reduced current requirements. For 2.6A or higher current applications, use DMP2110U-7, PMV65XP,215, PMV75UP,215, or FDN338P.

Q: What is the significance of the gate-source threshold voltage (Vgs(th)) difference between parts?

A: Vgs(th) determines the gate voltage required to turn the MOSFET on. The DMP2225L-7 has Vgs(th) of 1.25V at 250µA. Substitute parts with lower Vgs(th) (such as PMV65XP,215 at 0.9V) turn on at lower gate voltages, potentially improving switching speed and reducing gate drive power. Parts with higher Vgs(th) (such as NTR1P02T1G at 2.3V) require higher gate drive voltage. Verify gate drive circuit compatibility when selecting substitutes with significantly different Vgs(th) values.

Q: Why do some substitute parts have lower power dissipation ratings than the DMP2225L-7?

A: Power dissipation is calculated as Pd = Id² × Rds(on). Substitute parts with lower current ratings or superior on-resistance characteristics exhibit lower power dissipation. For example, PMV65XP,215 achieves 480mW dissipation at 2.8A due to its 74mOhm on-resistance, compared to the DMP2225L-7's 1.08W at 2.6A with 110mOhm on-resistance. Lower dissipation reduces thermal management requirements and improves efficiency.

Q: Are there any gate voltage (Vgs) limitations I should consider when substituting?

A: Yes. The DMP2225L-7 supports ±12V gate voltage. Some substitutes, such as FDN336P and FDN338P, support only ±8V. The NTR1P02T1G supports ±20V. Verify that your gate drive circuit operates within the substitute part's Vgs(max) specification. Exceeding Vgs(max) can cause gate oxide damage and device failure.

Q: What is the difference between SOT-23-3 and TO-236AB packages?

A: SOT-23-3 and TO-236AB are mechanically and electrically equivalent surface mount packages with identical pin configurations and footprints. Both designations refer to the same three-pin package used for small-signal transistors and MOSFETs. Parts specified as either SOT-23-3 or TO-236AB are interchangeable on the same PCB layout.

Q: Should I test substitute parts before full production deployment?

A: Verification of electrical performance and thermal characteristics in your specific application circuit is a standard engineering practice. Confirm gate drive voltage compatibility, switching performance, and thermal behavior under your application's load conditions.

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