DMP2016UFDF-13 Equivalent & Substitute Parts

Part Overview

The DMP2016UFDF-13 is a P-Channel MOSFET manufactured by Diodes Incorporated, designed for surface mount applications in the 6-UDFN Exposed Pad package. This device operates at a drain-to-source voltage of 20 V with a continuous drain current of 9.5 A at 25°C and a maximum power dissipation of 900 mW. The part is classified as Active and is ROHS3 Compliant. Substitute parts are identified when electrical characteristics, mechanical packaging, and thermal specifications remain identical across different manufacturing lots or date codes, ensuring direct interchangeability in circuit designs.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	20	V
Current - Continuous Drain (Id) @ 25°C	9.5	A (Ta)
Rds On (Max) @ Id, Vgs	15	mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id	1.1	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30	nC @ 8 V
Vgs (Max)	±8	V
Input Capacitance (Ciss) (Max) @ Vds	1710	pF @ 10 V
Power Dissipation (Max)	900	mW (Ta)
Operating Temperature	-55 to 150	°C (TJ)
Package / Case	6-UDFN Exposed Pad	—
Mounting Type	Surface Mount	—
Packaging	Tape & Reel (TR)	—

Substitute Part Grouping Explanation

Substitute parts for the DMP2016UFDF-13 are identified based on strict electrical and mechanical parameter matching. The substitution criteria include:

Electrical Parameters:

Drain to Source Voltage (Vdss): 20 V
Continuous Drain Current (Id) @ 25°C: 9.5 A (Ta)
On-State Resistance (Rds On): 15 mOhm @ 7A, 4.5V
Gate Threshold Voltage (Vgs(th)): 1.1 V @ 250µA
Gate Charge (Qg): 30 nC @ 8 V
Maximum Gate Voltage (Vgs): ±8 V
Input Capacitance (Ciss): 1710 pF @ 10 V
Power Dissipation: 900 mW (Ta)
Operating Temperature Range: -55°C to 150°C (TJ)

Mechanical Parameters:

Package Type: 6-UDFN Exposed Pad (U-DFN2020-6 Type F)
Mounting Type: Surface Mount
Packaging Format: Tape & Reel (TR)

Compliance Parameters:

RoHS Status: ROHS3 Compliant
REACH Status: REACH Unaffected
Product Status: Active

Parts meeting all these criteria are classified as parametric equivalents and direct substitutes.

Parameter Comparison

Parameter	DMP2016UFDF-13	DMP2016UFDF-7	Match
Manufacturer	Diodes Incorporated	Diodes Incorporated	Yes
FET Type	P-Channel	P-Channel	Yes
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	Yes
Drain to Source Voltage (Vdss)	20 V	20 V	Yes
Current - Continuous Drain (Id) @ 25°C	9.5 A (Ta)	9.5 A (Ta)	Yes
Rds On (Max) @ Id, Vgs	15 mOhm @ 7A, 4.5V	15 mOhm @ 7A, 4.5V	Yes
Vgs(th) (Max) @ Id	1.1 V @ 250µA	1.1 V @ 250µA	Yes
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 8 V	30 nC @ 8 V	Yes
Vgs (Max)	±8 V	±8 V	Yes
Input Capacitance (Ciss) (Max) @ Vds	1710 pF @ 10 V	1710 pF @ 10 V	Yes
Power Dissipation (Max)	900 mW (Ta)	900 mW (Ta)	Yes
Operating Temperature	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	Yes
Package / Case	6-UDFN Exposed Pad	6-UDFN Exposed Pad	Yes
Mounting Type	Surface Mount	Surface Mount	Yes
Packaging	Tape & Reel (TR)	Tape & Reel (TR)	Yes
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Yes
REACH Status	REACH Unaffected	REACH Unaffected	Yes
Product Status	Active	Active	Yes

Engineering Selection Recommendations

The DMP2016UFDF-7 is a direct parametric equivalent to the DMP2016UFDF-13. Both parts are manufactured by Diodes Incorporated and share identical electrical specifications, mechanical packaging, and compliance certifications. The difference between these part numbers reflects manufacturing date codes or production lot designations rather than functional or performance variations.

Selection between DMP2016UFDF-13 and DMP2016UFDF-7 is determined by inventory availability and procurement requirements. Both parts are classified as Active products and maintain ROHS3 Compliance and REACH Unaffected status. The DMP2016UFDF-7 currently maintains higher inventory levels (925 Pcs) compared to the DMP2016UFDF-13 (616 Pcs), which may influence supply chain decisions.

For applications requiring the P-Channel MOSFET specifications defined by this product family, either part number provides equivalent performance in the 6-UDFN Exposed Pad surface mount package with identical thermal and electrical characteristics across the full operating temperature range of -55°C to 150°C (TJ).

Frequently Asked Questions (FAQ)

Q: Can DMP2016UFDF-7 be used as a direct replacement for DMP2016UFDF-13?

A: Yes. The DMP2016UFDF-7 is a parametric equivalent with identical electrical characteristics, on-state resistance, gate charge, input capacitance, power dissipation, and operating temperature range. Both parts use the same 6-UDFN Exposed Pad package and surface mount configuration.

Q: Are there any differences in package dimensions or pin configuration between these parts?

A: No. Both the DMP2016UFDF-13 and DMP2016UFDF-7 use the U-DFN2020-6 (Type F) package with 6-UDFN Exposed Pad configuration. Pin assignments and mechanical dimensions are identical.

Q: What is the difference between DMP2016UFDF-13 and DMP2016UFDF-7?

A: The difference in part numbers reflects manufacturing date codes or production lot designations. The electrical and mechanical specifications are identical. Both parts share the same base product number DMP2016.

Q: Are both parts RoHS and REACH compliant?

A: Yes. Both DMP2016UFDF-13 and DMP2016UFDF-7 are ROHS3 Compliant and REACH Unaffected.

Q: What is the continuous drain current rating for these MOSFETs?

A: Both parts are rated for 9.5 A continuous drain current (Id) at 25°C (Ta).

Q: What is the maximum on-state resistance specification?

A: The maximum on-state resistance (Rds On) is 15 mOhm, measured at 7 A drain current and 4.5 V gate-source voltage for both parts.

Q: Can these parts be used in high-temperature applications?

A: Yes. Both parts operate across the temperature range of -55°C to 150°C (TJ), supporting high-temperature circuit designs within this specification.

Q: What is the gate charge specification?

A: The maximum gate charge (Qg) is 30 nC at 8 V gate-source voltage for both parts.

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