DMP2004DWK-7 Equivalent & Substitute Parts

Part Overview

The DMP2004DWK-7 is a dual P-channel MOSFET array manufactured by Diodes Incorporated, designed for surface mount applications in logic-level gate switching circuits. This device integrates two P-channel MOSFETs in a compact 6-TSSOP (SOT-363) package, rated for 20V drain-to-source voltage and 430mA continuous drain current at 25°C. The part is currently in active production status with ROHS3 compliance and unlimited moisture sensitivity rating (MSL 1). Equivalent and substitute parts are identified to provide design flexibility, support supply chain continuity, and accommodate application-specific performance requirements within the dual P-channel MOSFET category.

Substiute Parts

DMP2004DWK-7

Diodes IncorporatedIn Stock: 35278DMP2004DWK-7 Datasheet

Current PartRFQ

NTJD4152PT1G

onsemiIn Stock: 75814NTJD4152PT1G Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the DMP2004DWK-7 is determined by strict equivalence across the following critical parameters:

Configuration Match: Both the main part and substitute must be dual P-channel MOSFET arrays to maintain circuit topology and pin compatibility.

Voltage Rating: Drain-to-source voltage (Vdss) must be equal to or greater than 20V to ensure safe operation within the same voltage domain.

Package Compatibility: The package must be 6-TSSOP, SC-88, or SOT-363 to ensure mechanical and electrical compatibility with existing PCB layouts and solder reflow processes.

Logic Level Gate Feature: The substitute must support logic-level gate drive to maintain compatibility with standard digital control signals.

Current Capability: The substitute must support continuous drain current at or above the application requirement. Higher current ratings provide design margin and are acceptable substitutes.

Compliance Status: Both parts must maintain ROHS3 compliance and active product status to ensure long-term availability and regulatory alignment.

The NTJD4152PT1G from onsemi meets all substitution criteria and provides enhanced electrical performance characteristics within the same package family.

Parameter Comparison

Engineering Selection Recommendations

Primary Selection (DMP2004DWK-7): Select the DMP2004DWK-7 when the application requires the exact electrical specifications of 430mA continuous drain current and 900mOhm on-resistance. This part is suitable for designs with lower current demands and established supply chain relationships with Diodes Incorporated. The extended operating temperature range of -65°C to 150°C provides coverage for extreme environmental conditions.

Substitute Selection (NTJD4152PT1G): Select the NTJD4152PT1G when higher current capacity is required or when supply availability of the primary part is constrained. This substitute provides doubled continuous drain current (880mA) and significantly reduced on-resistance (260mOhm), delivering improved thermal performance and lower power dissipation. The substitute maintains identical voltage rating, package form factor, and logic-level gate compatibility. Both parts carry active product status and ROHS3 compliance, ensuring regulatory alignment and long-term manufacturability.

Compliance Verification: Both parts are ROHS3 compliant, REACH unaffected, and classified under ECCN EAR99 with identical HTSUS codes (8541.21.0095). Both maintain MSL 1 (unlimited) moisture sensitivity rating, eliminating moisture-related handling constraints.

Package Compatibility: Both parts use the 6-TSSOP/SC-88/SOT-363 package family, ensuring direct PCB layout compatibility without redesign requirements.

Frequently Asked Questions (FAQ)

Q: Can the NTJD4152PT1G be used as a direct replacement for the DMP2004DWK-7 in existing designs?

A: Yes. Both parts share identical package geometry (6-TSSOP/SC-88/SOT-363), voltage rating (20V Vdss), configuration (dual P-channel), and logic-level gate feature. The NTJD4152PT1G provides enhanced current capacity (880mA vs. 430mA) and lower on-resistance (260mOhm vs. 900mOhm), making it a direct electrical upgrade with no PCB modifications required.

Q: What are the key differences between these two parts?

A: The primary differences are continuous drain current (DMP2004DWK-7: 430mA; NTJD4152PT1G: 880mA), on-resistance (DMP2004DWK-7: 900mOhm; NTJD4152PT1G: 260mOhm), maximum power dissipation (DMP2004DWK-7: 250mW; NTJD4152PT1G: 272mW), and minimum operating temperature (DMP2004DWK-7: -65°C; NTJD4152PT1G: -55°C). The NTJD4152PT1G is the higher-performance variant.

Q: Are there any thermal or power dissipation concerns when substituting?

A: The NTJD4152PT1G exhibits lower on-resistance (260mOhm vs. 900mOhm), resulting in reduced power dissipation at equivalent current levels. This substitution improves thermal performance and reduces junction temperature rise, providing a thermal advantage over the original part.

Q: Do both parts require identical gate drive voltage?

A: Both parts are logic-level gate MOSFETs compatible with standard digital control signals. The Vgs(th) specifications differ slightly (DMP2004DWK-7: 1V; NTJD4152PT1G: 1.2V), but both operate reliably with 4.5V gate drive voltage as specified in the on-resistance ratings.

Q: Are there any supply chain or availability differences?

A: The DMP2004DWK-7 is supplied in Tape & Reel (TR) packaging with 35,200 pieces in stock. The NTJD4152PT1G is supplied in Cut Tape (CT) and Digi-Reel® packaging with 75,757 pieces in stock. Both parts maintain active product status with established manufacturer support.

Q: What is the operating temperature range difference, and does it matter?

A: The DMP2004DWK-7 operates from -65°C to 150°C (TJ), while the NTJD4152PT1G operates from -55°C to 150°C (TJ). The DMP2004DWK-7 provides 10°C additional low-temperature coverage. For applications requiring operation below -55°C, the DMP2004DWK-7 is the required selection.

Q: Are both parts RoHS compliant?

A: Yes. Both the DMP2004DWK-7 and NTJD4152PT1G are ROHS3 compliant, REACH unaffected, and carry identical ECCN (EAR99) and HTSUS (8541.21.0095) classifications.