DMNH6042SSD-13 Equivalent & Substitute Parts

Part Overview

The DMNH6042SSD-13 is a dual N-channel MOSFET array manufactured by Diodes Incorporated, rated for 60V drain-to-source voltage with a continuous drain current of 16.7A at 25°C. This surface mount device is housed in an 8-SOIC package and is qualified to AEC-Q101 automotive standards. The part is currently active in production with extensive inventory availability.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained within the specified parameter ranges. The primary substitute for this device is the SI4900DY-T1-E3 from Vishay Siliconix, which shares the same package footprint and voltage rating while offering alternative current and thermal characteristics.

Substiute Parts

DMNH6042SSD-13

Diodes IncorporatedIn Stock: 14032DMNH6042SSD-13 Datasheet

Current PartRFQ

SI4900DY-T1-E3

Vishay SiliconixIn Stock: 65216SI4900DY-T1-E3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the DMNH6042SSD-13 is determined by the following critical parameters:

Electrical Compatibility Criteria:

• Drain-to-source voltage rating (Vdss) must equal or exceed 60V
• Package type must be 8-SOIC with identical 0.154" (3.90mm) width
• Configuration must be dual N-channel (2 N-Channel)
• Mounting type must be surface mount
• Gate threshold voltage (Vgs(th)) must be compatible at specified test conditions
• RoHS3 compliance and MSL Level 1 status required

Application-Specific Considerations: The SI4900DY-T1-E3 qualifies as a substitute based on matching Vdss (60V), identical package geometry (8-SOIC), dual N-channel configuration, and surface mount compatibility. However, the continuous drain current rating differs significantly (5.3A versus 16.7A), which restricts substitution to applications where the lower current rating is acceptable. The SI4900DY-T1-E3 features a TrenchFET® technology designation and logic-level gate drive capability, which may provide advantages in specific circuit topologies despite the reduced current capacity.

Parameter Comparison

Engineering Selection Recommendations

DMNH6042SSD-13 (Primary Selection): The DMNH6042SSD-13 is the preferred component for applications requiring the specified 16.7A continuous drain current at 60V. This device carries AEC-Q101 automotive qualification, making it suitable for automotive-grade applications. The part is in active production with substantial inventory availability (13,935 pcs). RoHS3 compliance and MSL Level 1 rating confirm environmental and handling compatibility with standard manufacturing processes.

SI4900DY-T1-E3 (Substitute Selection): The SI4900DY-T1-E3 serves as a substitute only in applications where the continuous drain current requirement does not exceed 5.3A. Both devices share identical package geometry (8-SOIC), voltage rating (60V), and dual N-channel configuration, enabling direct PCB footprint compatibility. The SI4900DY-T1-E3 maintains RoHS3 compliance and MSL Level 1 status. The maximum operating temperature of the SI4900DY-T1-E3 is 150°C, compared to 175°C for the DMNH6042SSD-13, which may be a limiting factor in high-temperature applications. The SI4900DY-T1-E3 features higher gate charge (20nC @ 10V versus 4.2nC @ 4.5V), which affects switching speed characteristics.

Substitution Constraints: The SI4900DY-T1-E3 is not suitable as a direct replacement in circuits designed for the full 16.7A current capacity of the DMNH6042SSD-13. Applications operating near the upper temperature limit (above 150°C) require the DMNH6042SSD-13. Circuits sensitive to gate charge and switching speed may be affected by the SI4900DY-T1-E3's higher Qg specification.

Frequently Asked Questions (FAQ)

Q: Can the SI4900DY-T1-E3 replace the DMNH6042SSD-13 in all applications?

A: No. The SI4900DY-T1-E3 has a maximum continuous drain current of 5.3A, compared to 16.7A for the DMNH6042SSD-13. Substitution is limited to applications where the circuit current does not exceed 5.3A. Additionally, the SI4900DY-T1-E3 has a maximum operating temperature of 150°C versus 175°C for the DMNH6042SSD-13.

Q: Are the package footprints identical between these two devices?

A: Yes. Both the DMNH6042SSD-13 and SI4900DY-T1-E3 use the 8-SOIC package with a width of 0.154" (3.90mm). PCB layout and reflow soldering parameters remain unchanged when substituting between these parts.

Q: What is the significance of the gate charge difference between these devices?

A: The DMNH6042SSD-13 has a gate charge of 4.2nC (@ 4.5V), while the SI4900DY-T1-E3 has 20nC (@ 10V). Higher gate charge requires more energy to switch the device and may result in slower switching transitions. Circuits with tight switching speed requirements should account for this difference.

Q: Do both devices meet automotive qualification standards?

A: The DMNH6042SSD-13 carries AEC-Q101 automotive qualification. The SI4900DY-T1-E3 does not list AEC-Q101 qualification in the provided specifications. For automotive applications, the DMNH6042SSD-13 is the appropriate selection.

Q: Are both devices RoHS3 compliant?

A: Yes. Both the DMNH6042SSD-13 and SI4900DY-T1-E3 are ROHS3 compliant with MSL Level 1 (Unlimited) moisture sensitivity rating, confirming compatibility with standard surface mount assembly processes.

Q: What is the difference in on-resistance between these devices?

A: The DMNH6042SSD-13 has RDS(on) of 50mOhm (@ 5.1A, 10V), while the SI4900DY-T1-E3 has 58mOhm (@ 4.3A, 10V). The slightly higher on-resistance of the SI4900DY-T1-E3 results in increased power dissipation at equivalent current levels.

Q: Can the SI4900DY-T1-E3 be used in circuits operating at 175°C?

A: No. The SI4900DY-T1-E3 has a maximum operating temperature of 150°C. Applications requiring operation at temperatures above 150°C must use the DMNH6042SSD-13, which is rated to 175°C.

Q: Are there any differences in input capacitance between these devices?

A: Yes. The DMNH6042SSD-13 has input capacitance of 584pF (@ 25V), while the SI4900DY-T1-E3 has 665pF (@ 15V). Higher input capacitance affects gate drive circuit design and switching characteristics.