DMNH6008SPSQ-13 Equivalent & Substitute Parts

Part Overview

The DMNH6008SPSQ-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 60V drain-to-source voltage with 16.5A continuous drain current at 25°C (Ta) and 88A at case temperature (Tc). This device is housed in a PowerDI5060-8 surface mount package and is qualified to AEC-Q101 automotive standards. The part is currently in active production status with 9344 units in stock.

Equivalent and substitute parts are identified when alternative MOSFETs meet the same electrical specifications and mechanical compatibility requirements, enabling design flexibility, supply chain alternatives, and component availability management.

Substiute Parts

DMNH6008SPSQ-13
Diodes IncorporatedIn Stock: 9431DMNH6008SPSQ-13 Datasheet
DMNH6008SPSQ-13
Current Part
FDMS86520L
onsemiIn Stock: 35977FDMS86520L Datasheet
FDMS86520L
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 60 V
Continuous Drain Current @ 25°C (Ta) 16.5 A
Continuous Drain Current @ Case (Tc) 88 A
RDS(on) Max @ 20A, 10V 8 mOhm
Gate-Source Voltage (Vgs) Max ±20 V
Gate Threshold Voltage @ 250µA 4 V
Operating Temperature Range -55 to 175 °C
Package Type PowerDI5060-8 Surface Mount
Qualification Standard AEC-Q101 Automotive

Substitute Part Grouping Explanation

Substitution of the DMNH6008SPSQ-13 is determined by equivalence in the following critical parameters:

Electrical Compatibility Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
  • Continuous Drain Current: Must support minimum 16.5A at 25°C ambient
  • RDS(on) characteristics: Must not exceed specified on-resistance at rated gate voltage
  • Gate-Source Voltage rating: Must accommodate ±20V maximum
  • Operating temperature range: Must span -55°C to 175°C minimum

Mechanical Compatibility Criteria:

  • Surface mount package configuration
  • Pin count and footprint compatibility
  • Thermal performance characteristics

Compliance Requirements:

  • RoHS3 compliance
  • REACH unaffected status
  • Automotive-grade qualification (AEC-Q101 preferred)

The FDMS86520L from onsemi meets the electrical voltage and current specifications while maintaining surface mount compatibility and automotive qualification standards.

Parameter Comparison

Parameter DMNH6008SPSQ-13 (Diodes Inc.) FDMS86520L (onsemi) Unit
Manufacturer Diodes Incorporated onsemi
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) 60 60 V
Continuous Drain Current @ 25°C (Ta) 16.5 13.5 A
Continuous Drain Current @ Case (Tc) 88 22 A
RDS(on) Max @ Rated Conditions 8 @ 20A, 10V 8.2 @ 13.5A, 10V mOhm
Gate Threshold Voltage @ 250µA 4 3 V
Gate Charge (Qg) @ 10V 40.1 63 nC
Input Capacitance (Ciss) @ 30V 2597 4615 pF
Gate-Source Voltage (Vgs) Max ±20 ±20 V
Power Dissipation Max (Ta) 1.6 2.5 W
Operating Temperature Range -55 to 175 -55 to 150 °C
Mounting Type Surface Mount Surface Mount
Package / Case 8-PowerTDFN 8-PowerTDFN
RoHS Status ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected
Product Status Active Active

Engineering Selection Recommendations

Primary Part: DMNH6008SPSQ-13

The DMNH6008SPSQ-13 remains the specified component with full AEC-Q101 automotive qualification and an operating temperature range of -55°C to 175°C. This part is actively produced and maintains 9344 units in current inventory.

Substitute Part: FDMS86520L

The FDMS86520L from onsemi is qualified as an equivalent substitute based on the following factors:

  • Both devices share identical 60V Vdss rating and ±20V Vgs maximum specification
  • Both are surface mount N-Channel MOSFETs in 8-PowerTDFN package configuration
  • Both maintain RoHS3 compliance and REACH unaffected status
  • Both are active production parts with established supply availability (35910 units in stock)
  • RDS(on) specifications are comparable at 8mOhm and 8.2mOhm respectively

Operational Considerations:

The FDMS86520L exhibits a lower continuous drain current rating at 25°C (13.5A versus 16.5A) and a reduced maximum operating temperature of 150°C versus 175°C. These differences must be evaluated against specific application thermal and current requirements. The FDMS86520L demonstrates higher gate charge (63nC versus 40.1nC) and input capacitance (4615pF versus 2597pF), which may affect switching performance in high-frequency applications.

Both parts are suitable for automotive applications and maintain equivalent compliance certifications.

Frequently Asked Questions (FAQ)

Q: Can the FDMS86520L directly replace the DMNH6008SPSQ-13 in all applications?

A: Direct substitution is valid for applications where the continuous drain current requirement does not exceed 13.5A at 25°C ambient temperature and the maximum operating junction temperature does not exceed 150°C. The FDMS86520L is electrically and mechanically compatible in the same 8-PowerTDFN package footprint.

Q: What are the key electrical differences between these two parts?

A: The primary differences are continuous drain current (16.5A versus 13.5A at Ta), maximum operating temperature (175°C versus 150°C), gate charge (40.1nC versus 63nC), and input capacitance (2597pF versus 4615pF). Voltage ratings, RDS(on), and package type are equivalent.

Q: Are both parts automotive qualified?

A: The DMNH6008SPSQ-13 carries explicit AEC-Q101 automotive qualification. The FDMS86520L is an active production automotive-grade part from onsemi. Both maintain RoHS3 compliance and REACH unaffected status.

Q: Do these parts share the same package footprint?

A: Yes. Both devices use the 8-PowerTDFN surface mount package configuration, enabling direct PCB layout compatibility without redesign.

Q: Which part should be selected for high-temperature applications?

A: The DMNH6008SPSQ-13 supports operation to 175°C junction temperature, making it the appropriate choice for applications requiring maximum thermal headroom. The FDMS86520L is rated to 150°C maximum.

Q: How do gate charge differences affect circuit design?

A: The FDMS86520L exhibits higher gate charge (63nC versus 40.1nC at 10V). This requires evaluation of gate driver capability and switching speed requirements. Higher gate charge may result in slower switching transitions and increased driver power dissipation.

Q: Are there supply chain advantages to using the substitute part?

A: The FDMS86520L maintains higher current inventory (35910 units versus 9344 units), potentially offering improved availability for high-volume production requirements.

Request Quote (Ships tomorrow)