DMNH6008SPS-13 Equivalent & Substitute Parts

Part Overview

The DMNH6008SPS-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 60V drain-to-source voltage with 16.5A continuous drain current at 25°C (Ta) and 88A at case temperature (Tc). This device is housed in a PowerDI5060-8 surface mount package and is designed for power switching applications requiring efficient gate drive characteristics and low on-state resistance. The part maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatibility with the application's thermal and switching requirements.

Substiute Parts

DMNH6008SPS-13

Diodes IncorporatedIn Stock: 9092DMNH6008SPS-13 Datasheet

Current PartRFQ

BSC097N06NSATMA1

Infineon TechnologiesIn Stock: 10287BSC097N06NSATMA1 Datasheet

MFR RecommendedRFQ

BSZ099N06LS5ATMA1

Infineon TechnologiesIn Stock: 1150BSZ099N06LS5ATMA1 Datasheet

MFR RecommendedRFQ

FDMS86520L

onsemiIn Stock: 35977FDMS86520L Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the DMNH6008SPS-13 is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a Vdss rating of 60V to ensure compatibility with the application's voltage stress requirements.

Drain Current Capability: Substitute parts must support the required continuous drain current at both ambient temperature (Ta) and case temperature (Tc) conditions. The DMNH6008SPS-13 specifies 16.5A at Ta and 88A at Tc.

On-State Resistance (Rds On): The maximum on-state resistance at specified gate voltage and drain current determines power dissipation and thermal performance. Substitute parts with comparable or lower Rds On values maintain equivalent or improved efficiency.

Gate Drive Characteristics: Gate threshold voltage (Vgs(th)), gate charge (Qg), and input capacitance (Ciss) affect switching speed and driver circuit compatibility. Substitute parts with lower gate charge enable faster switching transitions.

Thermal Performance: Power dissipation ratings at ambient and case temperatures determine thermal management requirements. Substitute parts with equal or superior thermal ratings support equivalent or improved thermal operation.

Package Compatibility: All substitute parts utilize the 8-PowerTDFN surface mount package, ensuring mechanical and electrical compatibility with existing PCB layouts.

Compliance and Status: All substitute parts maintain Active product status, RoHS3 compliance, and MSL 1 rating, ensuring regulatory and supply chain compatibility.

Parameter Comparison

Engineering Selection Recommendations

BSC097N06NSATMA1 (Infineon OptiMOS™ Series)

This substitute part maintains the 60V Vdss rating and provides 46A continuous drain current at case temperature, exceeding the DMNH6008SPS-13 capability. The on-state resistance of 9.7 mOhm at 40A and 10V is comparable to the original part. Gate charge is significantly reduced to 15 nC at 10V, enabling faster switching transitions and reduced driver power consumption. Input capacitance is reduced to 1075 pF, further improving switching performance. The part maintains Active product status, RoHS3 compliance, and MSL 1 rating. Operating temperature range extends to 150°C maximum junction temperature, which is 25°C lower than the original part. This substitute is suitable for applications where improved switching speed and reduced gate drive requirements are beneficial.

BSZ099N06LS5ATMA1 (Infineon OptiMOS™ Series)

This substitute part maintains the 60V Vdss rating and provides 46A continuous drain current at case temperature. The on-state resistance of 9.9 mOhm at 20A and 10V is equivalent to the original part. Gate charge is substantially reduced to 3.1 nC at 4.5V, providing the lowest gate charge among all substitutes and enabling the fastest switching transitions. Input capacitance is 1300 pF at 30V. The part maintains Active product status, RoHS3 compliance, and MSL 1 rating. Operating temperature range extends to 150°C maximum junction temperature. This substitute is optimal for high-frequency switching applications where minimal gate charge and rapid switching transitions are critical.

FDMS86520L (onsemi PowerTrench® Series)

This substitute part maintains the 60V Vdss rating and provides 13.5A continuous drain current at ambient temperature and 22A at case temperature. The on-state resistance of 8.2 mOhm at 13.5A and 10V is equivalent to the original part. Gate charge is 63 nC at 10V, which is higher than the original part, resulting in slower switching transitions and increased driver power consumption. Input capacitance is 4615 pF at 30V, the highest among all substitutes. The part maintains Active product status, RoHS3 compliance, and MSL 1 rating. Operating temperature range extends to 150°C maximum junction temperature. This substitute is suitable for applications with lower current requirements where the higher gate charge and input capacitance are acceptable.

Frequently Asked Questions (FAQ)

Q: Can the BSC097N06NSATMA1 be used as a direct replacement for the DMNH6008SPS-13?

A: The BSC097N06NSATMA1 maintains the same 60V voltage rating and 8-PowerTDFN package, making it mechanically compatible. The on-state resistance is comparable at 9.7 mOhm versus 8 mOhm. However, the maximum operating temperature is 150°C versus 175°C for the original part. Verify that your application does not require operation above 150°C junction temperature before substitution.

Q: What is the primary advantage of the BSZ099N06LS5ATMA1 over the original DMNH6008SPS-13?

A: The BSZ099N06LS5ATMA1 offers significantly reduced gate charge of 3.1 nC at 4.5V compared to 40.1 nC at 10V for the original part. This reduction enables faster switching transitions, lower gate driver power consumption, and improved efficiency in high-frequency switching applications. The lower input capacitance of 1300 pF also reduces driver stress.

Q: Is the FDMS86520L suitable for applications requiring 16.5A continuous current?

A: The FDMS86520L provides 13.5A continuous drain current at ambient temperature, which is below the 16.5A requirement of the original DMNH6008SPS-13. At case temperature, it provides 22A, which exceeds the 16.5A ambient specification but falls short of the 88A case temperature rating of the original part. Thermal analysis is required to determine if case temperature operation is sufficient for your application.

Q: Do all substitute parts maintain the same package footprint?

A: Yes, all substitute parts utilize the 8-PowerTDFN surface mount package, ensuring identical PCB footprint compatibility. However, verify that the specific supplier device package designation (PowerDI5060-8 for the original, PG-TDSON-8-6 for BSC097N06NSATMA1, PG-TSDSON-8-FL for BSZ099N06LS5ATMA1, and 8-PQFN for FDMS86520L) aligns with your PCB design if custom footprints were used.

Q: What is the impact of higher gate charge on circuit design?

A: Gate charge determines the energy required to switch the MOSFET on and off. The FDMS86520L has 63 nC gate charge at 10V, compared to 40.1 nC for the original part. Higher gate charge requires a more robust gate driver with higher current capability and may increase switching losses. For low-frequency applications, this impact is minimal. For high-frequency switching, consider the BSZ099N06LS5ATMA1 with 3.1 nC gate charge.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all substitute parts listed maintain RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity level, ensuring regulatory compatibility and supply chain flexibility equivalent to the original DMNH6008SPS-13.

Q: What is the significance of the lower maximum operating temperature in substitute parts?

A: The original DMNH6008SPS-13 supports operation to 175°C junction temperature, while all substitute parts are rated to 150°C maximum. If your application requires sustained operation above 150°C junction temperature, the original part is required. For applications operating below 150°C, the substitute parts are fully compatible.

Q: How do input capacitance differences affect circuit performance?

A: Input capacitance (Ciss) affects the gate drive circuit's charging time and power consumption. The BSC097N06NSATMA1 has the lowest Ciss at 1075 pF, enabling the fastest gate charging. The FDMS86520L has the highest Ciss at 4615 pF, requiring longer charging times. For high-frequency applications, lower input capacitance reduces switching losses and improves efficiency.