DMNH4011SK3-13 Equivalent & Substitute Parts

Part Overview

The DMNH4011SK3-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 40V drain-to-source voltage and 50A continuous drain current in a surface mount TO-252-3 package. This device is classified as Active product status and is ROHS3 compliant with unlimited moisture sensitivity level (MSL 1). The part is suitable for switching applications requiring moderate current handling in compact form factors.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatibility with the TO-252-3 package footprint and surface mount assembly requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	50	A (Tc)
Rds On (Max) @ 50A, 10V	10	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	25.5	nC
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ 20V	1405	pF
Power Dissipation (Max)	2.6	W (Ta)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3 (DPAK)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the DMNH4011SK3-13 is determined by the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-source voltage (Vdss) must equal or exceed 40V
Continuous drain current (Id) must meet or exceed 50A at 25°C
On-state resistance (Rds On) must not exceed 10mOhm at specified conditions
Gate threshold voltage (Vgs(th)) must be compatible with 4V @ 250µA
Maximum gate voltage (Vgs) must support ±20V operation
Operating temperature range must encompass -55°C to 175°C

Package and Mechanical Compatibility:

Surface mount technology required
TO-252-3 (DPAK) package footprint with 2 leads plus tab
Pin configuration must match SC-63 standard

Regulatory and Compliance Requirements:

ROHS3 compliance required
MSL 1 (Unlimited) moisture sensitivity level
Active product status

Substitute parts are grouped into two categories: parametric equivalents (identical electrical specifications with different packaging or qualification) and manufacturer-recommended alternatives (enhanced performance characteristics within compatible parameter ranges).

Parameter Comparison

Parameter	DMNH4011SK3-13	DMNH4011SK3Q-13	FDD8445	FDD8447L
Manufacturer	Diodes Incorporated	Diodes Incorporated	onsemi	Fairchild Semiconductor
Vdss (V)	40	40	40	40
Id @ 25°C (A)	50 (Tc)	50 (Tc)	70 (Tc)	50 (Tc)
Rds On (Max) @ 10V (mOhm)	10 @ 50A	10 @ 50A	8.7 @ 50A	8.5 @ 14A
Vgs(th) @ 250µA (V)	4	4	4	3
Qg @ 10V (nC)	25.5	25.5	59	52
Ciss @ 20V (pF)	1405	1405	4050	1970
Vgs (Max) (V)	±20	±20	±20	±20
Power Dissipation (Max)	2.6W (Ta)	2.6W (Ta)	79W (Tc)	44W (Tc)
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 150
Package	TO-252-3	TO-252-3	TO-252AA	TO-252 (DPAK)
Packaging Format	Tube	Tape & Reel (TR)	Cut Tape & Digi-Reel®	Tube
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	Not specified
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

DMNH4011SK3Q-13 (Diodes Incorporated)

This part is a parametric equivalent to the DMNH4011SK3-13 with identical electrical specifications. The primary distinction is packaging format: DMNH4011SK3Q-13 is supplied in Tape & Reel (TR) format, whereas the main part is supplied in tube packaging. This substitute includes AEC-Q101 automotive qualification, making it suitable for applications requiring automotive-grade components. Both parts maintain ROHS3 compliance, Active product status, and identical electrical performance. Selection of this substitute is appropriate when tape and reel packaging is required for automated assembly processes or when automotive qualification is mandated by application requirements.

FDD8445 (onsemi)

This part is a manufacturer-recommended alternative offering enhanced performance characteristics. The FDD8445 maintains the 40V Vdss rating and exceeds the 50A continuous drain current requirement with a 70A rating. On-state resistance is improved to 8.7mOhm at 50A, 10V, compared to the 10mOhm specification of the main part. Power dissipation capability is significantly higher at 79W (Tc) versus 2.6W (Ta). The FDD8445 is supplied in Cut Tape and Digi-Reel® packaging formats. This substitute is appropriate for applications where improved thermal performance or higher current capacity provides design margin, and where the TO-252AA package variant is compatible with the PCB layout.

FDD8447L (Fairchild Semiconductor)

This part is a manufacturer-recommended alternative with comparable electrical performance. The FDD8447L maintains the 40V Vdss rating and 50A continuous drain current specification. On-state resistance is 8.5mOhm at 14A, 10V, providing improved performance at lower current levels. Gate threshold voltage is lower at 3V versus 4V, which may affect gate drive circuit design. Gate charge is higher at 52nC compared to 25.5nC, requiring consideration in switching speed applications. Operating temperature range extends to 150°C maximum junction temperature, which is 25°C lower than the main part. Power dissipation capability is 44W (Tc). This substitute is appropriate when lower gate threshold voltage is beneficial for gate drive circuits and when the reduced upper temperature limit does not constrain the application.

Frequently Asked Questions (FAQ)

Q: Can DMNH4011SK3Q-13 be used as a direct replacement for DMNH4011SK3-13?

A: Yes. DMNH4011SK3Q-13 is a parametric equivalent with identical electrical specifications, operating temperature range, and package footprint. The only difference is the packaging format (Tape & Reel versus tube). Both parts are ROHS3 compliant and Active status. Selection depends on assembly process requirements and whether automotive qualification (AEC-Q101) is needed.

Q: What are the key differences between FDD8445 and the main part?

A: FDD8445 offers enhanced performance with 70A continuous drain current versus 50A, improved on-state resistance of 8.7mOhm versus 10mOhm, and significantly higher power dissipation capability at 79W versus 2.6W. The package variant is TO-252AA rather than TO-252-3. These enhancements provide greater thermal margin and current capacity for demanding applications.

Q: Is FDD8447L suitable for high-temperature applications?

A: FDD8447L has a maximum operating temperature of 150°C, which is 25°C lower than the DMNH4011SK3-13 specification of 175°C. Applications requiring operation above 150°C junction temperature should not use FDD8447L as a substitute.

Q: How does gate charge affect switching performance?

A: Gate charge (Qg) determines the amount of charge required to switch the MOSFET on or off. DMNH4011SK3-13 has 25.5nC gate charge, while FDD8445 has 59nC and FDD8447L has 52nC. Higher gate charge requires more gate drive current or longer switching times. Applications with fast switching requirements should consider the lower gate charge of the main part.

Q: Are all substitute parts ROHS3 compliant?

A: DMNH4011SK3-13, DMNH4011SK3Q-13, and FDD8445 are confirmed ROHS3 compliant. FDD8447L RoHS status is not specified in the provided data. Verification with the manufacturer is required if ROHS3 compliance is a mandatory requirement.

Q: Can FDD8445 be used in applications designed for DMNH4011SK3-13?

A: FDD8445 can be used if the PCB layout accommodates the TO-252AA package variant and if the enhanced electrical characteristics do not create design conflicts. The improved on-state resistance and higher current rating provide additional performance margin. Gate charge and input capacitance are higher, which may affect gate drive circuit timing.

Q: What is the significance of the TO-252AA package variant used by FDD8445?

A: TO-252AA is a variant of the TO-252 package family with the same footprint and pin configuration as TO-252-3. The primary difference is internal construction and thermal characteristics. PCB layouts designed for TO-252-3 are generally compatible with TO-252AA, but thermal performance characteristics may differ.

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