DMNH4005SPSQ-13 Equivalent & Substitute Parts

Part Overview

The DMNH4005SPSQ-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 40V drain-to-source voltage with 80A continuous drain current at 25°C (Tc). This device is housed in a PowerDI5060-8 surface mount package and is designed for high-current switching applications requiring low on-resistance performance. The part is Active in product status and RoHS3 compliant.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to component availability, supply chain considerations, or design optimization within the specified parameter ranges.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	80	A (Tc)
On-Resistance (Rds On Max) @ 20A, 10V	4	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	3	V
Gate Charge (Qg Max) @ 10V	48	nC
Input Capacitance (Ciss Max) @ 20V	2847	pF
Power Dissipation (Max)	2.8	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	8-PowerTDFN	Surface Mount
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for N-Channel MOSFETs in the 40V class is determined by the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must equal or exceed 40V
Continuous Drain Current (Id) must meet or exceed 80A at 25°C (Tc)
On-Resistance (Rds On) must not exceed specified maximum values at rated conditions
Gate Threshold Voltage (Vgs(th)) must fall within acceptable switching range
Gate Charge (Qg) and Input Capacitance (Ciss) must be compatible with drive circuitry
Operating temperature range must support application requirements
Power dissipation capability must accommodate thermal load

Mechanical Compatibility Criteria:

Surface mount package type (8-PowerTDFN)
Pin configuration and footprint compatibility
Moisture Sensitivity Level (MSL) rating

Compliance Criteria:

RoHS3 compliance status
REACH compliance status
Active product status

All three substitute parts meet these criteria within the specified parameter ranges.

Parameter Comparison

Parameter	DMNH4005SPSQ-13 (Diodes)	BSC050N04LSGATMA1 (Infineon)	CSD18503Q5AT (TI)	CSD18513Q5AT (TI)
Manufacturer	Diodes Incorporated	Infineon Technologies	Texas Instruments	Texas Instruments
Vdss (V)	40	40	40	40
Id @ 25°C (A, Tc)	80	85	100	124
Rds On (Max) @ 10V (mOhm)	4 @ 20A	5 @ 50A	4.3 @ 22A	5.3 @ 19A
Vgs(th) (Max) (V)	3 @ 250µA	2 @ 27µA	2.3 @ 250µA	2.4 @ 250µA
Qg (Max) @ 10V (nC)	48	47	16	61
Ciss (Max) @ 20V (pF)	2847	3700	2640	4280
Power Dissipation (Max) (W)	2.8	2.5 (Ta), 57 (Tc)	3.1 (Ta), 120 (Tc)	96 (Tc)
Operating Temperature (°C, TJ)	-55 to 175	-55 to 150	-55 to 150	-55 to 150
Package	8-PowerTDFN (PowerDI5060-8)	8-PowerTDFN (PG-TDSON-8-5)	8-PowerTDFN (8-VSONP 5x6)	8-PowerTDFN (8-VSONP 5x6)
Packaging Type	Tape & Reel (TR)	Cut Tape (CT) & Digi-Reel®	Cut Tape (CT) & Digi-Reel®	Tape & Reel (TR)
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

All three substitute parts are Active products with RoHS3 compliance and REACH unaffected status, meeting regulatory requirements equivalent to the DMNH4005SPSQ-13.

BSC050N04LSGATMA1 (Infineon OptiMOS™ Series): This part provides 85A continuous drain current, exceeding the 80A requirement. On-resistance of 5mOhm at 50A and 10V is slightly higher than the main part specification. Gate charge of 47nC is comparable. Operating temperature maximum of 150°C is 25°C lower than the main part. This device is suitable for applications where the reduced temperature range is acceptable and higher current capability is beneficial.

CSD18503Q5AT (Texas Instruments NexFET™ Series): This part delivers 100A continuous drain current with on-resistance of 4.3mOhm at 22A and 10V, meeting performance specifications. Gate charge of 16nC is significantly lower, reducing drive circuit requirements. Input capacitance of 2640pF is lower than the main part, improving switching speed. Operating temperature maximum of 150°C is 25°C lower. This device is suitable for applications requiring optimized gate drive performance and faster switching characteristics.

CSD18513Q5AT (Texas Instruments NexFET™ Series): This part provides the highest continuous drain current at 124A with on-resistance of 5.3mOhm at 19A and 10V. Gate charge of 61nC is higher than the main part, requiring increased drive circuit capability. Input capacitance of 4280pF is the highest among all options. Operating temperature maximum of 150°C is 25°C lower. This device is suitable for applications requiring maximum current handling capacity where gate drive capability is available.

All substitute parts maintain 8-PowerTDFN package compatibility with surface mount assembly processes. Physical footprint verification is required due to package variant designations (PowerDI5060-8, PG-TDSON-8-5, 8-VSONP 5x6).

Frequently Asked Questions (FAQ)

Q: Can the BSC050N04LSGATMA1 be used as a direct replacement for the DMNH4005SPSQ-13?

A: The BSC050N04LSGATMA1 meets the 40V voltage rating and exceeds the 80A current requirement at 85A. On-resistance specifications are compatible. The primary consideration is the reduced maximum operating temperature of 150°C versus 175°C for the main part. If the application operates within -55°C to 150°C, this part is electrically and mechanically compatible.

Q: What is the significance of the lower gate charge in the CSD18503Q5AT?

A: Gate charge of 16nC versus 48nC in the main part reduces the charge that must be supplied by the gate driver circuit. This results in lower gate drive power dissipation and allows use of lower-current gate driver outputs. Applications with limited gate drive capability benefit from this characteristic.

Q: Are there package footprint differences between the substitute parts?

A: All parts use 8-PowerTDFN surface mount packages. However, the specific package designations differ: PowerDI5060-8 (main part), PG-TDSON-8-5 (Infineon), and 8-VSONP 5x6 (Texas Instruments). Physical dimensions and pin spacing must be verified against PCB layout requirements, as these designations indicate different thermal and mechanical characteristics despite the same pin count.

Q: Which substitute part is best for high-temperature applications?

A: The DMNH4005SPSQ-13 main part supports operation to 175°C (TJ). All three substitute parts are rated to 150°C maximum. For applications requiring operation above 150°C, the main part must be retained. For applications within the 150°C limit, all substitutes are acceptable from a temperature perspective.

Q: How do the input capacitance values affect circuit design?

A: Input capacitance (Ciss) ranges from 2640pF to 4280pF across all options. Higher capacitance increases the charge required for gate switching and can slow switching speed. The CSD18503Q5AT offers the lowest capacitance at 2640pF, while the CSD18513Q5AT is highest at 4280pF. Gate drive circuit design must accommodate these variations to maintain switching performance.

Q: Are all parts available in equivalent packaging formats?

A: The main part is supplied in Tape & Reel (TR) format. The Infineon and Texas Instruments parts are available in Cut Tape (CT) & Digi-Reel® or Tape & Reel (TR) formats. Packaging format selection depends on assembly process requirements and order quantities.

Q: What compliance certifications apply to all parts?

A: All four parts are RoHS3 compliant, REACH unaffected, and carry MSL rating of 1 (Unlimited). All are classified under ECCN EAR99 and HTSUS 8541.29.0095. Regulatory requirements are equivalent across all options.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message