DMNH3010LK3-13 N-Channel MOSFET 30V 15A/55A TO-252 Equivalent & Substitute Parts

Part Overview

The DMNH3010LK3-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 30V drain-to-source voltage with continuous drain current of 15A at Ta and 55A at Tc. This device is housed in a TO-252-3 (DPAK) surface mount package and is qualified to AEC-Q101 automotive standards. The part is currently in active production status with 20,400 units in stock.

Equivalent and substitute parts are identified based on matching electrical specifications including drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, gate charge, and thermal operating range. Substitute parts must maintain compatibility with the TO-252-3 package footprint and surface mount assembly requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	15	A
Continuous Drain Current @ 25°C (Tc)	55	A
Rds On (Max) @ Id, Vgs	9.5 mOhm @ 18A, 10V	mOhm
Gate Charge (Qg) @ Vgs	37	nC @ 10V
Vgs(th) (Max) @ Id	2.5	V @ 250µA
Input Capacitance (Ciss) @ Vds	2075	pF @ 15V
Power Dissipation (Max)	2	W (Ta)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3 (DPAK)	Surface Mount
Qualification	AEC-Q101	Automotive
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitute parts for the DMNH3010LK3-13 are selected based on the following electrical and mechanical criteria:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 30V (exact match required)
Package Type: TO-252-3 or TO-252AA (DPAK) surface mount configuration
FET Type: N-Channel MOSFET technology
Operating Temperature Range: Minimum -55°C to 175°C (TJ)
Continuous Drain Current: Rated for minimum 15A at Ta or equivalent thermal performance
On-Resistance (Rds On): Comparable performance at specified gate voltage and drain current
Gate Charge (Qg): Acceptable switching characteristics
Compliance: RoHS3 compliant, REACH unaffected, EAR99 classification

Substitution Logic: Parts are grouped as direct substitutes when all primary criteria are met. Variations in continuous drain current at different temperature conditions (Ta vs. Tc), gate charge specifications, and input capacitance are acceptable provided the 30V Vdss rating and TO-252-3 package footprint are maintained. Parts with active or not-for-new-designs status are included based on electrical equivalence and availability.

Parameter Comparison

Parameter	DMNH3010LK3-13 (Main)	FDD8880	IPD090N03LGATMA1	IRFR3707ZTRPBF	NTD4302T4G
Manufacturer	Diodes Inc.	onsemi	Infineon	Infineon	onsemi
Vdss (V)	30	30	30	30	30
Id @ Ta (A)	15	13	-	-	8.4
Id @ Tc (A)	55	58	40	56	68
Rds On (Max) @ 10V (mOhm)	9.5 @ 18A	9 @ 35A	9 @ 30A	9.5 @ 15A	10 @ 20A
Vgs(th) (Max) @ 250µA (V)	2.5	2.5	2.2	2.25	3
Gate Charge Qg @ 10V (nC)	37	31	15	14	80
Ciss @ 15V (pF)	2075	1260	1600	1150	2400
Power Dissipation (W)	2 (Ta)	55 (Tc)	42 (Tc)	50 (Tc)	1.04 (Ta) / 75 (Tc)
Operating Temp Range (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 150
Package	TO-252-3	TO-252AA	PG-TO252-3-11	TO-252AA	DPAK
Product Status	Active	Active	Active	Not For New Designs	Obsolete
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Recommended Primary Substitutes (Active Status):

FDD8880 (onsemi) - This part is recommended as the primary substitute. It maintains the 30V Vdss rating, offers comparable on-resistance (9 mOhm vs. 9.5 mOhm), and provides slightly higher continuous drain current at Tc (58A vs. 55A). The part is in active production with 35,400 units in stock. Gate charge is lower (31 nC vs. 37 nC), resulting in improved switching efficiency. The TO-252AA package is footprint-compatible with the original TO-252-3 specification.

IPD090N03LGATMA1 (Infineon OptiMOS™) - This part is recommended as a secondary substitute for applications requiring lower gate charge and threshold voltage. It maintains the 30V Vdss rating with 40A continuous drain current at Tc. Gate charge is significantly lower (15 nC vs. 37 nC), enabling faster switching transitions. The part is in active production with 5,400 units in stock. The PG-TO252-3-11 package is footprint-compatible with the original specification.

Alternative Substitutes (Limited Recommendation):

IRFR3707ZTRPBF (Infineon HEXFET®) - This part meets all electrical specifications with 56A continuous drain current at Tc and 9.5 mOhm on-resistance. However, the product status is "Not For New Designs," limiting its suitability for new development. It is suitable only for legacy system maintenance or replacement applications where existing inventory is available (15,268 units in stock).

NTD4302T4G (onsemi) - This part is not recommended for new applications. The product status is "Obsolete," and the operating temperature range is limited to -55°C to 150°C (vs. 175°C for the main part). Additionally, the continuous drain current at Ta is significantly lower (8.4A vs. 15A), and gate charge is substantially higher (80 nC vs. 37 nC). This part is listed only for reference in legacy system documentation.

Compliance and Certification: All recommended substitute parts maintain AEC-Q101 automotive qualification equivalence through RoHS3 compliance, REACH unaffected status, and EAR99 classification. Moisture sensitivity level is 1 (Unlimited) for all parts, ensuring compatibility with standard assembly and storage procedures.

Frequently Asked Questions (FAQ)

Q: Can FDD8880 be used as a direct replacement for DMNH3010LK3-13 in automotive applications?

A: Yes. FDD8880 is electrically equivalent and maintains the same 30V Vdss rating, comparable on-resistance, and TO-252AA package footprint compatibility. Both parts are RoHS3 compliant and REACH unaffected. FDD8880 is in active production status, making it suitable for new designs and production runs.

Q: What is the difference between TO-252-3 and TO-252AA packaging?

A: TO-252-3 and TO-252AA are equivalent DPAK surface mount packages with identical footprints and lead configurations. Both designations refer to the same physical package: a 2-lead plus tab configuration (SC-63). Parts specified as TO-252AA are directly compatible with TO-252-3 PCB layouts.

Q: Why is NTD4302T4G listed as a substitute if it is obsolete?

A: NTD4302T4G is included in the substitute list for reference and legacy system documentation purposes only. It is not recommended for new designs due to obsolete status and reduced operating temperature range (-55°C to 150°C vs. -55°C to 175°C). It should be used only when replacing existing components in fielded systems where no alternative is available.

Q: How does gate charge affect device selection?

A: Gate charge (Qg) determines the switching speed and driver circuit requirements. Lower gate charge (IPD090N03LGATMA1 at 15 nC) enables faster switching transitions and reduces driver power consumption compared to higher gate charge devices (NTD4302T4G at 80 nC). For applications with standard gate drivers, all listed substitutes are acceptable. For high-frequency switching applications, lower gate charge devices are preferred.

Q: Are all substitute parts suitable for automotive applications?

A: FDD8880 and IPD090N03LGATMA1 are suitable for automotive applications, maintaining RoHS3 compliance and REACH unaffected status. IRFR3707ZTRPBF is electrically suitable but carries "Not For New Designs" status, limiting its use to legacy system support. NTD4302T4G is obsolete and should not be used in new automotive designs.

Q: What is the significance of continuous drain current at Ta versus Tc?

A: Continuous drain current at Ta (ambient temperature, typically 25°C) represents the device rating under standard test conditions. Continuous drain current at Tc (case temperature) represents the rating under thermal stress conditions. Both specifications are provided to account for different thermal management scenarios. The DMNH3010LK3-13 is rated for 15A at Ta and 55A at Tc. Substitute parts with comparable or higher ratings at both conditions are acceptable.

Q: Can IPD090N03LGATMA1 be used in place of DMNH3010LK3-13 if continuous drain current is lower (40A at Tc vs. 55A)?

A: IPD090N03LGATMA1 can be used as a substitute if the application's actual current requirements do not exceed 40A at Tc. The lower gate charge (15 nC) and improved on-resistance characteristics may provide performance benefits in switching applications. However, if the application requires the full 55A capability, FDD8880 or IRFR3707ZTRPBF are more appropriate selections.

Q: What is the impact of threshold voltage (Vgs(th)) differences among substitute parts?

A: Threshold voltage determines the gate voltage required to turn the device on. All listed substitutes have Vgs(th) values between 2.2V and 3V at 250µA, which are compatible with standard gate driver circuits. The variation is within acceptable limits for most applications. NTD4302T4G has a higher threshold (3V), which may require slightly higher gate drive voltage but remains compatible with standard drivers rated for ±20V gate voltage.

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