DMNH10H028SPSQ-13 Equivalent & Substitute Parts

Part Overview

The DMNH10H028SPSQ-13 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 100V drain-to-source voltage with 40A continuous drain current at case temperature (Tc). This device is housed in a PowerDI5060-8 surface mount package and is designed for high-current switching applications. The part maintains Active product status and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatibility with the PowerDI5060-8 or equivalent 8-PowerTDFN package footprint. Substitution becomes necessary due to inventory availability, lead time constraints, or design optimization requirements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	40	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	28	mOhm @ 20A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	4	V @ 250µA
Gate Charge (Qg) @ Vgs	36	nC @ 10V
Input Capacitance (Ciss) @ Vds	2245	pF @ 50V
Power Dissipation (Max)	1.6	W (Ta)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	8-PowerTDFN	Surface Mount
FET Type	N-Channel	MOSFET

Substitute Part Grouping Explanation

Substitution eligibility for the DMNH10H028SPSQ-13 is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
FET Type: Must be N-Channel MOSFET
Drive Voltage: Must support 10V gate drive
Gate Threshold Voltage: Must be rated at 4V @ specified Id
Maximum Gate Voltage: Must support ±20V

Mechanical Compatibility Requirements:

Package Type: Must be 8-PowerTDFN or equivalent surface mount package
Mounting Type: Must be Surface Mount
Moisture Sensitivity Level: Must be MSL 1 or better

Compliance Requirements:

RoHS Status: Must be ROHS3 Compliant
REACH Status: Must be REACH Unaffected
Product Status: Must be Active

The substitute parts identified (BSC252N10NSFGATMA1 and FDMC86102) meet all electrical and mechanical compatibility criteria. Both devices share the same voltage rating, N-Channel MOSFET technology, gate threshold voltage specification, and surface mount 8-PowerTDFN package configuration. All parts maintain identical compliance certifications.

Parameter Comparison

Parameter	DMNH10H028SPSQ-13 (Diodes)	BSC252N10NSFGATMA1 (Infineon)	FDMC86102 (onsemi)
Manufacturer	Diodes Incorporated	Infineon Technologies	onsemi
Drain-to-Source Voltage (Vdss)	100V	100V	100V
Continuous Drain Current (Id) @ 25°C	40A (Tc)	40A (Tc)	20A (Tc)
Drive Voltage (Max Rds On)	10V	10V	10V
Rds On (Max) @ Id, Vgs	28mOhm @ 20A, 10V	25.2mOhm @ 20A, 10V	24mOhm @ 7A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	4V @ 250µA	4V @ 43µA	4V @ 250µA
Gate Charge (Qg) @ Vgs	36nC @ 10V	17nC @ 10V	18nC @ 10V
Input Capacitance (Ciss) @ Vds	2245pF @ 50V	1100pF @ 50V	965pF @ 50V
Power Dissipation (Max)	1.6W (Ta)	78W (Tc)	41W (Tc)
Operating Temperature Range	-55°C to 175°C (TJ)	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)
Package Type	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected
Product Status	Active	Active	Active

Engineering Selection Recommendations

BSC252N10NSFGATMA1 (Infineon Technologies OptiMOS™ Series)

This substitute provides full electrical equivalence to the DMNH10H028SPSQ-13. The BSC252N10NSFGATMA1 maintains the 100V Vdss rating and 40A continuous drain current specification at case temperature. The device exhibits superior on-resistance characteristics (25.2mOhm vs. 28mOhm) and reduced gate charge (17nC vs. 36nC), resulting in improved switching efficiency. The lower input capacitance (1100pF vs. 2245pF) reduces gate drive requirements. All compliance certifications are equivalent: ROHS3 Compliant, REACH Unaffected, and Active product status. The operating temperature range extends to 150°C (TJ), which is 25°C lower than the primary part. This device is suitable for applications where the reduced upper temperature limit does not conflict with system requirements.

FDMC86102 (onsemi PowerTrench® Series)

This substitute provides partial electrical equivalence with design trade-offs. The FDMC86102 maintains the 100V Vdss rating and 4V gate threshold voltage. However, the continuous drain current is rated at 20A (Tc), which is 50% lower than the DMNH10H028SPSQ-13. The on-resistance is superior (24mOhm @ 7A, 10V) and gate charge is significantly reduced (18nC vs. 36nC). This device is suitable for applications where the 20A current rating is sufficient and where reduced switching losses are prioritized. All compliance certifications match: ROHS3 Compliant, REACH Unaffected, and Active product status. The operating temperature range is identical to the Infineon substitute at 150°C (TJ).

Both substitutes maintain identical package compatibility (8-PowerTDFN), surface mount configuration, and regulatory compliance. Selection between substitutes depends on application current requirements and thermal management constraints.

Frequently Asked Questions (FAQ)

Q: Can the BSC252N10NSFGATMA1 be used as a direct replacement for the DMNH10H028SPSQ-13?

A: Yes. The BSC252N10NSFGATMA1 provides full electrical and mechanical compatibility. Both devices share identical Vdss (100V), continuous drain current (40A at Tc), gate threshold voltage (4V), and 8-PowerTDFN package configuration. The Infineon device exhibits improved performance characteristics with lower on-resistance and gate charge.

Q: What are the limitations of using the FDMC86102 as a substitute?

A: The FDMC86102 has a reduced continuous drain current rating of 20A (Tc) compared to 40A (Tc) for the primary part. This device is suitable only for applications where the 20A current specification meets design requirements. All other electrical parameters, including voltage rating and gate threshold voltage, are compatible.

Q: Are all three devices pin-compatible?

A: Yes. The DMNH10H028SPSQ-13, BSC252N10NSFGATMA1, and FDMC86102 all use the 8-PowerTDFN package configuration. Pin assignments are identical for surface mount placement.

Q: Do the substitute parts have the same operating temperature range?

A: The primary part (DMNH10H028SPSQ-13) operates from -55°C to 175°C (TJ). Both substitutes operate from -55°C to 150°C (TJ), representing a 25°C reduction in maximum junction temperature. Applications requiring operation above 150°C (TJ) cannot use these substitutes.

Q: What is the significance of the reduced gate charge in the substitute parts?

A: Lower gate charge (17nC for BSC252N10NSFGATMA1 and 18nC for FDMC86102 versus 36nC for the primary part) reduces the energy required to switch the device. This results in lower gate drive power consumption and faster switching transitions, improving overall circuit efficiency.

Q: Are all parts RoHS3 compliant?

A: Yes. The DMNH10H028SPSQ-13, BSC252N10NSFGATMA1, and FDMC86102 are all ROHS3 Compliant with REACH Unaffected status, meeting current environmental and regulatory requirements.

Q: What is the difference between the Ta and Tc current ratings?

A: Ta (ambient temperature) current rating is measured at 25°C ambient temperature. Tc (case temperature) current rating is measured at the device case temperature. The 40A rating for the primary part and BSC252N10NSFGATMA1 refers to Tc, indicating the device can sustain this current when the case is maintained at the specified temperature through adequate thermal management.

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